本論文為氧化釩摻雜鉭薄膜之熱敏電阻式微感測器的特性研究，藉由摻雜鉭元素來影響其電特性，提升氧化釩薄膜對溫度的靈敏性，其中使用磁控式射頻共濺鍍系統製備摻雜鉭之氧化釩薄膜，藉由調整摻雜量大小，找出薄膜製備最佳條件，並將其應用在懸浮式熱敏電阻式微感測器。熱阻式微感測器元件採用體型微加工蝕刻技術來製作懸浮式微結構，此懸浮結構能有效減少熱能由矽基板熱散逸的問題，減少元件熱導進而提升其響應度。
本實驗以射頻磁控式共濺鍍系統沉積氧化釩摻雜鉭薄膜，分別利用釩金屬靶與五氧化二鉭氧化靶並通入反應氣體為氧氣與氬氣，以共濺鍍的方式來控制摻雜的含量，在氮氣環境下，400oC熱處理1小時。利用可變溫之四點探針系統量測其片電阻並計算電阻溫度係數(Temperature Coefficient of Resistance, TCR)，藉由能量散佈光譜儀(Energy Dispersive Spectrometers, EDS)求得鉭摻雜之原子濃度百分比，並以X光繞射分析儀(X-ray Diffraction, XRD)與X光光電子能譜術(Electron Spectroscopy for Chemical Analysis, ESCA)分析薄膜之結晶性與鍵結情形。可獲得最佳條件為摻雜鉭元素含量為11.14 %之氧化釩薄膜，其電阻溫度係數值為3.24 %K-1，相較於未摻雜之氧化釩薄膜之電阻溫度係數值提升了1.48 %K-1，室溫電阻率為9.87 -cm，並將其作為後續應用在懸浮式熱敏電阻式微感測器之感測膜。元件封裝後，量測元件之頻率響應與溫度響應，最後計算出元件熱導、熱時間常數與響應度，分別為¬¬¬5.67 x 10-10 W/K、5.14 ms與239 KV/W，並進一步量測不同定電流之元件響應度來分析元件受自熱效應影響的程度。

In this study, the tantalum (Ta) was used to dope into the VOx films. The VOx films with various Ta-doped contents were fabricated by magnetron radio frequency (RF) co-sputtering system. The TCR values of Ta-V-O thin films were obtained by four point probe measurement with heating system. The chemical composition, crystallinity and chemical bonding of films were carried out by the Energy Dispersive Spectrometers (EDS), X-ray diffraction (XRD) and the X-ray photoelectron spectroscopy (XPS), respectively. It was found the optimal condition of Ta-V-O film with Ta concentration of 11.14 % and the TCR and resistivity of this film were 3.24 %K-1 and 9.27 Ω-cm at room temperature, respectively. The resulted were applied in the microbolometers as the sensing layer. Thermal conductance, thermal time constant and responsivity of device were calculated to be 5.67 × 10-10 W/K, 5.14 ms and 239 KV/W, respectively.

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