本實驗利用射頻磁控濺鍍法製備Si-xAl薄膜負極材料，不同含量的鋁(Si-8Al, Si-23Al, Si-43Al (at.%))被添入矽基地中做為緩衝物，以減緩矽薄膜在嵌鋰-脫鋰過程中劇烈的體積膨脹。實驗中探討Si-xAl薄膜負極材料在室溫及高溫(55℃)的電化學性質及其結構特性。
實驗結果指出，當矽基地中鋁含量增加時，鋰離子將由與Si-Al共同反應轉變為僅與鋁反應。與室溫相較，在55℃環境充放電時，增加的嵌鋰-脫鋰反應量會造成電容量的上升，但伴隨而來劇烈的體積膨脹，將造成循環穩定性的降低。除此之外，在55℃充放電測試過程中Si-23Al薄膜會有結晶化現象產生。
經由電化學阻抗(EIS)分析也發現，在室溫時，Si-8Al與Si-23Al電化學反應阻抗的差異是由電荷轉移過程所主導，而55℃時則是由鋰離子在材料中的擴散所主導。

In this study, Al was added into Si matrix as the buffer (Si-8Al, Si-23Al, Si-43Al) by RF magnetron sputtering to prevent the dramatic volumetric expansion of pure Si thin film anode during lithiation and delithiation. The electrochemical properties and structural characteristics of Si-xAl films at room temperature and high temperature (55℃) were investigated.
As the addition content of Al in Si matrix increase, lithium ions react with Al only instead of both Al and Si. At 55℃, the higher lithiation and delithiation quantity accompanied a dramatic volumetric expansion which increased the capacity but degraded the stability, besides the Si-23Al thin film was occurred crystallization during charge-discharge.
According to the EIS results, the resistances against electrochemical reactions of Si-8Al and Si-23Al are controlled by diffusion of lithium ions in the anode materials at high temperature while charge transfer process at room temperature.

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