本文以ANSYS對未來的450mm晶圓快速熱退火 (Rapid Thermal Annealing)與閃光燈熱退火 (Flash Lamp Annealing)製程，進行模擬分析之研究。模擬450mm晶圓在理想RTA製程中快速加熱10秒，溫度由22°C上升到1000°C；與在理想FLA製程中快速加熱1毫秒，溫度從600°C上升到1200°C，並針對晶圓受熱後之形變、應變、上中下層最大應力與應變向量等結果做比較探討。
由模擬結果可發現450mm晶圓在閃光燈熱退火中之形變、應變與應力值皆較小，且加熱時間與製程時間都是更快速的，故選擇FLA為450mm晶圓熱退火之較佳製程，並進行實驗設計法之後續優化探討，選定晶圓厚度、晶圓背面溫度、熱通量時間、熱通量大小為實驗因子，搭配單一因子法與田口式實驗法，進一步分析四控制因子在三水準中之優劣比較。結果可發現影響FLA製程熱通量時間對形變、上層最大應力、中間層最大應力之影響最劇；而熱通量大小對FLA應變值、下層最大應力影響最劇；晶圓背溫與晶圓厚度對FLA之形變、應變與應力之影響較小。
本文分析熱退火製程、選定較佳之熱製程並優化其製程因子，希望為日後450mm世代之製程建立一參考依據。

Due to the fast development of semiconductor manufacturing in recent years, the industry is facing the challenge of small gate widths and large wafer sizes.
In this study, finite element analysis (ANSYS) of transient models was used to explore the behavior of the 450mm wafer under Rapid Thermal Annealing (RTA) and Flash Lamp Annealing (FLA). By comparing the results of wafer deformation, strain and stress, FLA is selected as more suitable for the 450mm annealing process, and was further investigated by using the single factor and Taguchi experiments to optimize the FLA process. The process parameters include wafer thickness, wafer backside temperature, heat flux time, and heat flux value with the goal of achieving the smaller the best of wafer deformation, strain, and stress.
The results show that for FLA, heat flux time is the most influential factor on the deformation, and the stress of the upper and middle layers are; heat flux has the greatest effect on the strain and the lower layer stress. The effect of backside temperature and wafer thickness on the deformation, strain and stress of FLA is not significant; the wafer thickness is the least effective factor.
FLA process parameters for the 450mm wafer are also optimized by the Taguchi method.

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