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研究生：	林柏宏 Lin, Po-Hung
論文名稱：	內部光學損耗對半導體量子點雷射臨界電流密度之影響 Effect of Internal Optical Loss on Threshold Characteristics of Semiconductor Quantum Dot Laser
指導教授：	陳鐵城 Chen, Tei-Chen
學位類別：	碩士 Master
系所名稱：	工學院 - 機械工程學系 Department of Mechanical Engineering
論文出版年：	2005
畢業學年度：	93
語文別：	中文
論文頁數：	94
中文關鍵詞：	量子點雷射、臨界電流密度、速率方程、內部損耗
外文關鍵詞：	Internal loss, Rate equation, Quantum dot laser, Threshold current density
相關次數：	點閱：133 下載：1
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　　量子點雷射在近幾年越來越受到世界各國的重視，紛紛的投入大量的資金來研究與開發，主要是因為以量子點為發光層的雷射元件具有更低的電流密度、更高的光增益、更高的特徵溫度和更寬的調製帶寬等優點，可應用於紅外線偵測器、光碟機讀寫頭，以及現今最熱門的光纖通訊等方面。

　　理論上當不考慮內部損耗時，我們可以發現自由載子佔據能階的機率越大時，雷射發光強度會越強，在本文的研究中，當我們將外部損耗固定，來考慮內部損耗效應時，可以發現雷射作用時會有兩個特殊的臨界值和相對應的第一臨界電流密度與第二臨界電流密度，所以雷射要能夠作用，須在臨界值的範圍內，而電流密度也是如此。對溫度效應來說，根據理論及假設的結構和所獲得的參數值等條件下，在270K到307K的溫度範圍內，當溫度低時，量子點層中的載子無法藉由外加電流產生的熱逃脫到光侷限層中，大部分的載子會侷限在量子點層中，此時載子來回的激發，很容易達到雷射作用，所以溫度低時，雷射作用的雙臨界值區間會比高溫來的大，此外雷射作用時之結構的最終與最初之臨界參數也會隨溫度變化。

　The technology of quantum dot laser has attracted great attention recently due to the low threshold current density, higher characteristic temperature, and wider modulation band-width. Its applications include the read write head of the CD-ROM drive, infrared remote sensing the optical fiber and so on. Theoretically, we can find that the more level occupancy in the absence of internal loss, the more intensity of laser will be generated. Considering the fixed external loss and the internal loss on the threshold characteristics, the free-carrier density does not pin in the presence of light generation, and the free-carrier-density dependence of internal loss gives rise to the existence of the second lasing threshold above the conventional threshold. Above the second threshold, the light–current characteristic is two-valued up to a maximum current at which the lasing is quenched. As the temperature effect is concerned, we obtain a range form 270K to 307K under specific conditions. When the temperature becomes higher, the range between two lasing thresholds will be less than the case of lower temperature. In additions, the structure critical tolerable parameters are closely dependent on temperature.

摘要.....................................................................................................I
ABSTRACT........................................................................................II
誌謝...................................................................................................III
目錄...................................................................................................IV
表目錄..............................................................................................VII
圖目錄.............................................................................................VIII
符號說明.............................................................................................X
第1章 緒論........................................................................................1
1.1 前言...............................................................................................1
1.2 研究背景與動機...........................................................................2
1.3 文獻回顧.......................................................................................4
1.4 章節瀏覽.......................................................................................7
第2章 量子點特性與雷射相關知識................................................9
2.1 量子點...........................................................................................9
2.1.1 量子點製備技術......................................................................10
       2.1.1.1 有機金屬化學氣相法..............................................11
       2.1.1.2 分子束磊晶法..........................................................12
       2.1.1.3 磊晶模式..................................................................13
2.1.2 量子點的材料	.....................................................................13
2.1.3 量子點的應用	.....................................................................15
2.2 奈米材料中的量子效應..............................................................16
2.2.1 量子侷限效應	.....................................................................17
2.2.2 量子狀態密度	.....................................................................19
2.3 雷射簡介......................................................................................22
2.3.1 激發放射及居量反轉...............................................................22
2.3.2 雷射二極體之原理...................................................................24
2.3.3 光學腔.......................................................................................26
2.3.4 臨界電流...................................................................................28
2.3.5 溫度效應...................................................................................29
2.3.6 光學增益...................................................................................30
第3章 基本理論分析	.....................................................................31
3.1 速率方程式..................................................................................31
3.2 增益和臨界電流密度基本理論..................................................34
3.3 雷射作用之臨界情況與可允許的臨界參數..............................42
3.3.1 內部損耗效應..............................................................................42
3.3.2 雷射作用之臨界..........................................................................44
3.3.3 不考慮（缺乏）內部損耗時之可允許的臨界參數..................45
第4章 結果與討論..............................................................................47
4.1 模擬分析與模擬材料相關參數.....................................................47
4.2 雷射開始作用時之臨界狀態.........................................................50
4.3 雷射作用之臨界參數.....................................................................63
4.3.1 可允許的臨界值α0與σint.......................................................64
4.3.2 可允許的臨界值L與β..............................................................66
4.3.3 可允許的臨界值Ns與δ............................................................69
4.4 與結構參數相對應的臨界電流密度..............................................75
第5章 結論與未來展望.......................................................................86
5.1 結論..................................................................................................86
5.2 未來展望..........................................................................................87
參考資料.................................................................................................88
自述.........................................................................................................94

                                    

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