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研究生： 魏清忠
Wei, Chin-chung
論文名稱： 固定磨粒化學機械研磨於淺溝渠隔離製程效應的研究
An investigation of the effects of fixed abrasive chemical mechanical polishing to shallow trench isolation process
指導教授： 周榮華
Chou, Jung-Hua
學位類別： 碩士
Master
系所名稱： 工學院 - 工程科學系碩士在職專班
Department of Engineering Science (on the job class)
論文出版年： 2007
畢業學年度： 95
語文別： 中文
論文頁數： 102
中文關鍵詞： 淺溝渠隔離化學機械研磨 、固定磨粒研磨 、化學機械研磨
外文關鍵詞： chemical mechanical polishing, shallow trench isolation, fixed abrasive polishing
相關次數： 點閱：78  下載：5 
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    • 化學機械研磨，是目前在半導體平坦化製程上，最主要、也是最有效的技術。近年來，由於積體電路製程的線寬越來越窄，而其導線和電極的位置是透過光罩(Mask)來定義的，所以晶圓表面的平坦程度非常重要，因為要在凹凸不平的表面上，同時在凸處及凹處聚焦非常困難，再加上後段製造時，每層電路的連接也需要相當程度的平坦，否則電路間就無法接通或者有漏電的現象產生。
    本論文主要在研究固定磨粒研磨(Fixed Abrasive Polishing)在淺溝渠隔離磨粒研磨(Shallow Trench Isolation Chemical Mechanical Polishing)過程中機械反應與化學反應的影響程度，並藉由此找尋出最佳化的參數組合。在本論文中，分別進行了研磨參數控制實驗、不同耗材實驗與田口實驗設計，使得固定磨粒研磨的各項參數特性，更加容易被掌控，而由田口實驗設計，也讓固定磨粒研磨效率達到加倍的最佳研磨效果，並能同時改善研磨均勻度。

    At present, chemical mechanical polishing (CMP) is the most effective technology to achieve global planarization in semiconductor manufacturing processes. In recent years, the feature size of the IC processes is down to the nanometer range. Because the interconnect and electrode patterns are defined by masks, the wafer global planarization is very important. Without CMP, it is extremely difficult to focus in the unsmooth wafer surface. Furthermore, the connection between each electric circuit also needs suitable planarization, otherwise the interconnections may be short or cause leakage currents. Thus, CMP plays an extremely important role in the IC manufacturing industry.
    The purpose of this study is to investigate the effects of the important fixed abrasive polishing (FACMP) parameters and consumables for the shallow trench isolation process. From the parameters, consumables and Taguchi DOE methods, the best polishing performance is obtained. The experimental results not only improve the double removal rate for polishing but also 6% uniformity performance

    摘要······················································Ⅰ 目錄······················································Ⅲ 圖目錄····················································Ⅵ 表目錄··················································ⅩⅠ 第一章 序論 1.1研究背景···············································1 1.2化學機械研磨···········································3 1.3磨粒研磨拋光···········································7 1.4固定磨粒化學機械研磨···································8 第二章 研究動機與目標 2.1 研究動機·············································13 2.2 研究目標·············································16 第三章 文獻回顧 3.1固定磨粒研磨墊········································18 3.2淺溝渠隔離化學機械研磨拋光····························21 第四章 實驗設計與規劃 4.1 實驗規劃·············································25 4.2 實驗設備·············································29 4.3 實驗材料·············································39 4.4 實驗化學溶液·········································46 4.5 實驗目的、方法與步驟·································49 4.5.1 固定磨粒拋光製程特性實驗···························49 4.5.2 研磨液拋光與固定磨粒拋光比較實驗··········54 4.5.3 不同型號研磨墊研磨實驗····················56 4.5.4 不同型號次研磨墊實驗······················57 4.5.5 不同型號晶圓載具研磨實驗··················58 4.5.6 固定磨粒選擇比實驗························59 4.5.7 L-proline 效應實驗························61 4.5.8 Taguchi methods 實驗······················63 第五章 實驗結果 5.1固定磨粒拋光製程特性實驗······························65 5.1.1 壓力效應實驗結果·················66 5.1.2 L-proline流量效應實驗結果········67 5.1.3 研磨轉速效應實驗結果·············68 5.1.4 研磨區間效應實驗結果·············69 5.2研磨液研磨與固定磨粒研磨比較實驗·············71 5.3 不同型號研磨墊研磨實驗結果··················73 5.4 不同型號次研磨墊實驗結果····················74 5.5 不同型號晶圓載具研磨實驗結果················75 5.6 固定磨粒選擇比實驗結果·······························76 5.7 L-proline 成分效應實驗結果···························77 5.8 Taguchi methods 實驗結果·····························78 第六章 結果分析與討論 6.1 實驗參數特性分析與討論·······························81 6.1.1 壓力效應分析與討論························81 6.1.2 L-proline流量效應分析與討論···············83 6.1.3 研磨轉速效應分析與討論····················85 6.1.4 研磨區間效應分析與討論····················86 6.1.5 下壓力效應於選擇比特性上的分析與討論······88 6.2 實驗材料效應分析與討論·······························88 6.2.1 不同型號固定磨粒研磨墊實驗結果分析與討論··89 6.2.2 不同型號固定磨粒次研磨墊實驗結果分析與討論···························································90 6.2.3 不同型號晶圓載具實驗結果分析與討論········92 6.2.4 L-proline溶液實驗結果分析與討論···········93 6.3 研磨液與固定磨粒研磨比較與田口實驗結果分析與討論·····94 6.3.1研磨液研磨與固定磨粒研磨比較實驗結果分析與討論·······················································94 6.3.2 Taguchi methods實驗分析與討論·············95 第七章 結論與建議 7.1 結論·················································96 7.2 建議·················································98 附錄 參考文獻 圖目錄： 圖 1- 1 氧化鈰反應········································4 圖 1- 2 化學機械研磨機台基本架構··························6 圖 1- 3 化學機械研磨元件運動模式··························6 圖 1- 4 化學機械研磨反應的四個主要步驟····················7 圖 1- 5 固定磨粒化學機械研磨基本架構······················9 圖 1- 6 次研磨墊結構圖····································10 圖 1- 7 電子顯微鏡下的研磨墊······························10 圖 1- 8 鑲埋磨粒示意圖····································10 圖 1- 9 固定磨粒機械化學研磨流程··························11 圖 1- 10 淺溝渠隔離技術流程·······························12 圖 2- 1 淺溝渠隔離化學機械研磨技術在各技術階段的需求·····15 圖 2- 2 電子顯微鏡下研磨液研磨技術與固定磨粒研磨技術在溝渠內氧化矽磨蝕漥陷程度比較····································15 圖 2- 3 淺溝渠隔離化學機械研磨後示意圖····················16 圖 3- 1 使用(a)固定磨粒研磨墊與(b)一般研磨墊研磨後的SEM與表面輪廓圖··················································19 圖 3- 2 下壓力捲動的研磨效果表現··························21 圖 3- 3 不同研磨液與固定磨粒在淺溝渠隔離化學機械研磨中 Oxide loss的程度··········································22 圖 3- 4 不同研磨液與固定磨粒在淺溝渠隔離化學機械研磨中 Nitride loss的程度········································22 圖 3- 5 不同STI-CMP研磨後Step Height 的比較···············23 圖 3- 6 傳統研磨液與固定磨粒研磨技術在不同feature sizes下溝渠漥陷程度比較············································24 圖4- 1.AMAT 化學氣相沉積機································30 圖4- 2 Novellus 化學氣相沉積機····························32 圖4- 3 NOVA 12吋晶圓厚度量測機台··························33 圖4- 4.AMAT 12吋化學機械研磨機····························34 圖4- 5.AMAT 12吋化學機械研磨機研磨平臺····················35 圖4- 6.AMAT固定磨粒研磨平臺·······························36 圖4- 7.AMAT 晶圓載具Profiler型····························37 圖4- 8.AMAT晶圓載具Contour型······························38 圖4- 9 流量控制器·········································39 圖4- 10.SWR521截面圖······································40 圖4- 11.3M公司固定磨粒研磨墊特性··························40 圖4- 12. SWR521磨粒組成示意圖·····························41 圖4- 13.SWR521研磨墊示意圖································41 圖4- 14.SWR521與SWR542研磨粒子密度比較····················42 圖4- 15.SWR521與SRW542組成元素A與組成元素B的差別··········43 圖4- 16.SWR521與SRW542組成元素C與組成元素D的差別··········43 圖4- 17 SEM下SWR521與SWR550研磨粒子外觀與尺寸·············44 圖4- 18.固定磨粒研磨墊與次研磨墊結構圖····················45 圖4- 19 型號P6900 Ribbed Subpad的尺寸圖···················45 圖4- 20 Semi-Sperse 25E與SiLECT6000成分比較···············55 圖 5-1 初始條件下晶圓研磨移除量線狀輪廓圖·················66 圖 5-2 不同下壓力下的晶圓研磨移除量線狀輪廓圖·············67 圖 5-3 L-proline 流量400ml/min下的晶圓研磨移除量線狀輪廓圖····························································68 圖 5-4 研磨轉速43/37 RPM下的晶圓研磨移除量線狀輪廓圖······69 圖 5-5 不同研磨區間下的晶圓研磨移除量線狀輪廓圖···········70 圖 5-6 研磨液Semi-Sperse 25E的晶圓研磨移除量的線狀輪廓圖··71 圖 5-7 研磨液SiLECT6000的晶圓研磨移除量的線狀輪廓圖·······72 圖 5-8 研磨墊SWR542的晶圓研磨移除量的線狀輪廓圖···········73 圖 5-9 研磨墊SWR550的晶圓研磨移除量的線狀輪廓圖···········74 圖 5-10 次研磨墊P6900 Subpad的晶圓研磨移除量的線狀輪廓圖··75 圖 5-11 晶圓載具Contour型號的晶圓研磨移除量的線狀輪廓圖···76 圖 5-12 Oxide研磨率因數反應圖·····························80 圖 513 Oxide研磨均勻度因數反應圖··························80 圖 6- 1 矽晶圓移除率與下壓力的關係圖······················82 圖 6- 2 下壓力與研磨均勻度關係圖··························83 圖 6- 3 矽晶圓移除率與L-proline flow rate關係圖···········84 圖 6- 4 L-proline流量與研磨均勻度關係圖···················84 圖 6- 5 矽晶圓移除率與研磨轉速關係圖······················85 圖 6- 6 轉速與研磨均勻度關係圖····························86 圖 6- 7 矽晶圓移除率與研磨區間的關係圖····················87 圖 6- 8 研磨區間與研磨均勻度關係圖························87 圖 6- 9 下壓力與選擇比關係圖······························88 圖 6- 10 不同型號研磨墊的研磨量比較圖·····················89 圖 6- 11 不同型號研磨墊的研磨均勻度比較圖·················90 圖 6- 12 不同型號次研磨墊的研磨量比較圖···················91 圖 6- 13 不同型號研磨墊的研磨均勻度比較圖·················91 圖 6- 14 不同型號次研磨墊的Range比較圖····················92 圖 6- 15 不同型號晶圓載具的研磨均勻度比較圖···············93 圖 6- 16 L-proline成分效應曲面圖··························93 表目錄： 表 1- 1 ITRS 從2005年到 2020 年對積體電路產品相關特徵發展的預估······················································3 表 1- 2 機械研磨模式······································4 表 3- 1 Nguyen的實驗參數與結果····························18 表 3- 2 研磨後不同缺陷所佔的密度比例······················20 表 4- 1.實驗規劃項目表····································28 表 4- 2 L-proline 成分辨識資料-Ⅰ·························47 表 4- 3 L-proline 成分辨識資料-Ⅱ·························48 表 4- 4. 121點量測點位置 (單位:mm) ·······················51 表 4- 5固定磨粒研磨製程特性實驗參數初始設定···············53 表 4- 6.實驗條件控制表····································62 表 4- 7 設計參數及其水準··································63 表 4- 8 田口實驗參數控制表································64 表 5-1 初始條件下實驗資料結果·····························66 表 5-2 不同下壓力下實驗資料結果···························67 表 5-3 L-proline 流量400ml/min下實驗資料結果··············68 表 5-4 研磨轉速43/37 RPM下實驗資料結果····················69 表 5-5 不同研磨區間下實驗資料結果·························70 表 5-6研磨液Semi-Sperse 25E實驗資料結果···················72 表 5-7 研磨液SiLECT6000實驗資料結果·······················72 表 5-8 研磨墊SWR542實驗資料結果···························73 表 5-9 研磨墊SWR550實驗資料結果···························74 表 5-10 次研磨墊P6900 Subpad 實驗資料結果·················75 表 5-11 晶圓載具Contour型號的實驗資料結果·················76 表 5-12 Oxide薄膜與Nitride薄膜研磨結果····················77 表 5-13 L-proline效應實驗結果·····························78 表 5-14 田口實驗直交表與實驗數據··························79 表 5-15 Oxide研磨率之因數反應表···························79 表 5-16 Oxide研磨均勻度之因數反應表·······················80 表 6- 1 研磨液研磨與固定磨粒研磨比較實驗結果比較表········94

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