本研究以磁控濺鍍系統在玻璃基板上沉積氧化鋅薄膜作為成長氧化鋅奈米線的成核層。在低溫(90℃)環境下利用化學溶液法，將Zn(NO3)2‧6H2O 和 C6H12N4在特定的實驗參數下產生反應，並過飽和析出在氧化鋅薄膜上。 此研究主要探討不同氧化鋅薄膜沉積條件對於氧化鋅奈米線成長的影響，其中包含改變磁控濺鍍系統(直流、射頻)、濺鍍功率，和熱處理氧化鋅薄膜，觀察其成長的氧化鋅奈米線之直徑、長度和分佈密度的變化，以及氧化鋅奈米線在氧化鋅薄膜上的成長機制。本實驗結果利用原子力顯微鏡（AFM）和掃描式電子顯微鏡（SEM）觀察氧化鋅薄膜和奈米線的表面型態，微結構方面則是藉由低掠角入射X光繞射和高解析式電子顯微鏡來觀測，並用陰極螢光光譜及影像系統來測定其發光性質。
經由本研究的結果顯示，當成核層表面的顆粒大小增加時，其成長的氧化鋅奈米線的直徑會跟著增加，而氧化鋅奈米線的分佈密度與成核層表面的粗操度、I(002)百分強度(%)和顆粒大小有關，我們亦觀察到氧化鋅奈米線是由成核層表面的(002)面直接排列成長而成。

Radio frequency (RF) and direct-current (DC) magnetron sputtering system were employed to deposit ZnO film on glass substrate as the seed layer, which was used to grow aligned one-dimensional single-crystalline ZnO nanowires by low-temperature chemical solution method. Aqueous solution of zinc nitrate hydrate and methenamine were used in this research. We wanted to know the effect of seed layer characteristics on the synthesis of aligned ZnO nanowires with different deposited conditions of ZnO films, including changes in sputtering power source, and post annealing conditions. Investigations were carried out to probe how the diameter, length, and number density of ZnO nanowires varied as the structures of ZnO films changed. We also probed into how the ZnO nanowires grew from ZnO films. Atomic force microscope (AFM) and field-emission scanning electron microscope (FESEM) were used to examine the morphology of the nanowire. The microstructure was investigated by glazing incident X-ray diffraction and high resolution transmission electron microscopy. The property of luminescence was measured by cathodoluminescence (CL).
The diameter of nanowires was increases with particle size of the seed layer. The area density of nanowires was related to the roughness, the [0002] preferred orientation, and the particle size of the seed layer. The ZnO nanowires grew epitaxially from the seed layer directly.

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