簡易檢索 / 詳目顯示

研究生: 鍾源昇
Chuang, Yuan-Cheng
論文名稱: 以奈米尖錐製備具有規則排列之多孔性氧化鋁薄膜
Ordered porous anodic aluminum oxide film fabricated by nano-tip arrays
指導教授: 張守進
Chang, Shoou-Jinn
洪昭南
Hong, Chau-Nan Franklin
學位類別: 碩士
Master
系所名稱: 工學院 - 微機電系統工程研究所
Institute of Micro-Electro-Mechancial-System Engineering
論文出版年: 2005
畢業學年度: 93
語文別: 中文
論文頁數: 101
中文關鍵詞: 奈米尖錐奈米孔洞陽極處理
外文關鍵詞: nano-tip, anodic process
相關次數: 點閱:66下載:1
分享至:
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報
  •   奈米科技(nano technology),是一九九零年才逐漸為人所知的科技領域。奈米科技是研究尺寸在0.1-100nm 間。而陽極氧化鋁(anodic aluminum oxide ; AAO)的結構因為可以產生大面積規則性的孔洞所以最近幾年來被大量研究,它經由電化學之陽極處理後,可產生具有高密度之多孔性金屬氧化物-氧化鋁,它具有奈米尺寸(nano scale),並在奈米領域上有廣泛的應用,而且可以經由成本便宜的電化學處理方法產生大範圍並且一致的孔洞結構。陽極氧化鋁的處理技術是將高純度鋁箔(aluminum foil)與適當的電解液和幾乎不發生化學反應的陰極金屬搭配形成電化學電池,在特定的條件下其電化學反應會在鋁箔表面生成氧化鋁(alumina),此類的氧化鋁處理技術及其性質在過去數十年就已被研究探討並應用於工業上,其特色為孔洞大小尺寸單一、孔洞均一分佈,且孔洞分佈密度和大小可以經由調整製備參數而加以控制。但對於孔洞陣列之排列確有卻不同方法加以控制,而本實驗主要是結合非等向性蝕刻製作尖錐陣列壓印在鋁箔上並實施陽極處理;以探討控制奈米孔洞之可行性。

      Nanotechnology represents one of the most novel frontiers in today’s science and engineering research. With increasing interest in the fabrication of nanometer-sized structures applied in optical, electronic, magnetic, and optoelectronic devices. Anodic porous alumina, which has been studied in detail in recent years . Thus AAO has been commonly used to fabricate nanometer-sized structures via the template mediated process because of its relatively low cost and ease of fabrication compared with conventional lithography processed materials. In fundamental studies of anodic alumina oxide, we use high pure aluminum and then put this treated aluminum sample into a particular electrolyte to grow desired oxide under suitable conditions. After that , we can get patterns with uniform pore size . By adjusting process parameter , we can control our AAO patterns such as the pore size and the density of pores . But we have different methods to control pore Arrays. This experiment is mainly combine silicon mold by anisotropic etching of silicon and imprint onto aluminum foil .we will discuss the anodic process after imprinting that whether could control array of nano-pore.

    中文摘要 I 英文摘要 II 總目錄 III 圖目錄 VI 表目錄 IX 第一章 緒論 1 1-1 前言 1 第二章 理論基礎 4 2-1文獻回顧……………………………………………4 2-2 電解拋光…………………………………………...6 2-3 陽極氧化處理………………………….…………..9 2-4 微影製程…………………………………………..22 2-5 反應性離子蝕刻(Reactive ion etching)…………..30 2-6 矽之非等向性蝕刻(Anisotropic Etch)……………38 第三章 實驗參數與研究方法…………………….……46 3-1 前言…………………………….……….….………46 3-2系統設備…………………………………....….….…48 3-2-1光罩對準機(mask aligner)……………..….……48 3-2-2 旋轉塗佈機(Spin Coater) ……………..….………49 3-2-3 反應離子蝕刻機(Reactive Ion etching) ………...….49 3-2-4 電解之電源供應器……………………..……...…50 3-3 實驗藥品材料………………………………..…….. 54 3-3-1實驗基板…………………………………….......54 3-3-2實驗氣體…………………...………..…………..55 3-3-3實驗藥品………………………………..……….55 3-4 實驗操作步驟…………..…………….……..….……56 3-4-1基板前處理……………………………………….56 3-4-2實驗操作步驟…………………………………….57 3-4-2-1 微米矽尖錐製作步驟……………………...…57 3-4-2-2 鋁基板電解拋光……………………….…….58 3-4-3-3 壓印(imprinting) ……………………………..59  3-4-3-4陽極氧化處理………………………………...59 3-5 分析與鑑定 60 3-5-1 表面型態之分析………………………………….60 3-5-2 表面粗糙度之分析……………………………….60 第四章 結果與討論………………………..……………..61 4-1 前言…………………………………..………….…61 4-2 矽奈米尖錐之製備………………………………...61 4-2-1微影(photolithgraphy) …………………………..62 4-2-2 反應性離子蝕刻…………………………….....68 4-2-3非等向性蝕刻…………………………….….....72 4-3 鋁之陽極氧化處理……………………………...….78 4-3-1鋁之電解拋光………………………………......80 4-3-2 壓印鋁薄片之陽極氧化處理……………...….....83 第五章 結論………………………………………….….…96 第六章 參考文獻.......................................99

    <1> Kornelius Nielsch, Frank Muller, An-Ping Li, and Ulrich Gosele., Adv. Mater. 12,582(2000)
    <2> K. Nielsch, R. Hertel, R. B. Wehrspohn etc. Transactions on Magnetics. 38, 2571 (2002).
    <3> Robert M. Metzger, Valery V. Konovalov, Ming Sun. IEEE
    Transactions on Magnetics. 36,30,(2000).
    <4> Y. Li et al. Appl. Phys. Lett. 76,2011 (2000).
    <5>A. P. Li, F. Muller, A. Birner, K. Nielsch, and U. Gosele, J Appl. Phys
    84,6023 (1998).
    <6> H. Masuda, F. Hasegawa, and S. Ono, J. Electrochem. Soc. 144, L127,(1997).
    <7> O. Jessensky, F. Mu¨ller, and U. Gosele, Appl. Phys. Lett. 72, 1173 (1998).
    <8> A.-P. Li, F. Muller, A. Birner, K. Nielsch, and U. Gosele, J. Appl. Phys.84, 6023, (1998).
    <9> H. Masuda, K. Yada, and A. Osaka, Jpn. J. Appl. Phys., Part 237,   L1340, (1998).
    <10 >H. Masuda, H. Yamada, M. Satoh, H. Asoh, M. Nakao, and T.    Tamamura, Appl. Phys. Lett. 71, 2770 (1997).
    <11>A.-P. Li, F. Muller, and U. Gosele, Electrochem. Solid-State Lett.
    3, 131, (2000).
    <12>C. Y. Liu, A. Datta, and Y. L. Wang, Appl. Phys. Lett. 78,120 (2001).
    <13> N. W. Liu, A. Datta C. Y. Liu, and Y. L. Wang, Appl. Phys.Lett.
    82,1281 (2003).
    <14> A. P. Li et al., J. Appl. Phys. 84, 6023 (1998).
    <15> L. Ba and W. S. Li, J. Phys. D: Appl. Phys. 33, 2527 (2000).
    <16> H. Masuda et al., Appl. Phys. Lett. 78, 826 (2001).
    <17>G.E. Thompson, Thin solid films. 297,192 (1997).
    <18>Society of Vacuum Coaters 43rd Annual Technical Conference
    Proceedings. 15~20 (2000).
    <19>John Wiley Sons, Inc.,Principle of Polymerization, 24~25 (1991).
    <20>Mitsuhiro Shikida , Kazuro Sato , Kenji Tokoro, Daisuke Uchikawa , Sensor and Actuator 80,179-188(2000).
    <21>Kenji Tokoro, Daisuke Uchikawa, Mitsuhiro Shikida, and Kazuo Sato, International Symposium Micromechatronics and Human
    Sciience(1998)。
    <22>J. Angell, S. Terry, and P. Barth,Scientific American journal, 248, 44(1983).
    <23>K.E Petersen,” Silicon as a Mechanical Material”, Proceeding of the IEEE,70(5),420,May(1982)
    <24>C.S. Smith, Phys.Rev.,94, 42(1954)
    <25>Kornelius Nielsch, Jinsub Choi, Kathrin, Ralf B. Wehrspohn, and Ulrich Goselen, Nano letter Vol.2, page:677~680,(2002).
    <26>行政院國家科學委員會精密儀器發展中心,微機電系統技術與應用(2003)
    <27>余至成,微機電系統導論(2003).
    <28>黃伯仁,微電子技術導論.
    <29>Hong Xiao,半導體製程技術導論.
    <30>Milanovic et al, IEEE TED, Jan. (2001)
    <31>M.T. Wu, I. C. Leu and M. H. Hon, J.Vac. Sci. Technol. B 20(3), 776~782(2002)。
    <32>S. Bandyopadhyay, A. E. Miller, H.C. Chang, G. Banerjee, V. Yuzhakov, D-F. Yue, R. E. Ricker, S. Jones, J. A. Eastman, E. Baugher and M. Chandrasekhar, Nanotechnol. 7,360(1996).
    <33>Kornelius Nielsch, Jinsub Choi, Kathrin Schwirm, Ralf B. Wehrspohn, and Ulrich Gosele . Nano letter Vol.2, 677(2002).
    <34>Masuda, J.;Fukuda, K. Science, 268 1446. (1995)
    <35>黃盈捷&黃淑惠, 成大微奈米中心, Mask Aligner,SOP,Edition(2).
    <36>詹川逸,成大微奈米中心, 反應式離子蝕刻機RIE SOP Edition(1).

    下載圖示 校內:2007-08-03公開
    校外:2007-08-03公開
    QR CODE