本研究提出一項製程技術，克服光學微影原有之限制，達到奈米尺度微影。此技術可以定義出相當於電子束微影或奈米壓印微影此兩項奈米微影技術所要求之特徵尺度，並且可以大幅的降低生產的成本達到量產的需求。其方法在於應用現有光學微影的技術定義光組圖形，藉由光阻熱回熔(Thermal reflow)特性將圖形線寬縮小至100奈米以下，再利用物理氣相沉積系統與Lift-off製程技術定義出成長奈米碳管或奈米線所需之催化劑(如鐵、鈷、鎳、金等)。

　　藉此做為奈米碳管或其它奈米結構(如矽奈米線)之定位，藉此一技術控制奈米碳管或其它奈米結構的密度。並且達到低成本且具有量產潛能之目的。

　　In this paper we provided a simple fabrication process to overcome the limit of the optical lithography and achieve nano-scale lithography. This process can make a nano-scale pattern like Electron-beam Lithography (EBL) or Nanoimprinting Lithography (NIL) does, but at much lower fabrication cost.

　　This process is described as follows: fist, micro-scale circle array pattern was made on photoresist by using conventional g-line optical lithography. Then, thermal reflow process was adopted to reduce the size of the circle array to nano-scale. Different reflow temperatures and resist thickness were made to achieve a much smaller size of circle array which can be used to produce nanopartile array at desired locations. In the reflow process, the size of circle array can be reduced to less than 100 nm if proper thickness of resist and reflow temperature were selected. The reflow temperature varies from 160 t0 190oC and the thickness of the photoresist varies from 7 to 12μm. Finally, a thin film of Nikel was deposited on the patterned resist, and lift-off process was used to form anoparticles for growth of Carbon Nanotubes (CNTs).

　　Using the method presented in this thesis, CNTs or other nano structures can be grown at desired locations, or the density of CNTs or other nano structures can be properly controlled.

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