本論文主要探討以分子束磊晶系統成長硒化鋅系列一維奈米結構，包含三元碲硒化鋅奈米錐、雙晶結構碲硒化鋅奈米錐、硒化鋅/碲硒化鋅超晶格奈米錐、以及三維硒化鋅/碲硒化鋅異質分支奈米錐結構。此外也以碲硒化鋅奈米錐製備金屬-半導體-金屬光檢測器。
我們透過分子束磊晶系統以氣-液-固成長法使用金當觸媒於矽基板上成長碲硒化鋅(ZnSe0.95Te0.05)奈米錐。奈米錐的平均長度為0.9微米。所成長的碲硒化鋅奈米錐為閃鋅與鎢采的混合結構。在5%的碲元素摻雜之下，我們發現20K下的光致螢光光譜峰值紅移了27奈米。此外，我們以同樣方法成長了不同碲摻雜比例的碲硒化鋅奈米錐(ZnSe0.9Te0.1)。此奈米錐擁有雙晶與閃鋅/鎢采混合結構。在光檢測器製作方面，我們於碲硒化鋅奈米錐上透過指叉狀金屬遮罩以電子束蒸鍍法鍍上一層厚金膜以作為電極。在5V的外加偏壓下，其所量測到的光-暗電流比可達700。
我們也製作了有更大複雜度的一維奈米結構。我們成功地成長出擁有不同井寬的硒化鋅/碲硒化鋅超晶格奈米錐。它們同樣是閃鋅與鎢采的混合結構。所觀察到的光致螢光光譜其強度遠大於同質的碲硒化鋅奈米錐。此外，井寬為16、20、24奈米的硒化鋅/碲硒化鋅奈米錐，其活化能分別為76、46、19毫電子伏特。基於以上的架構，我們更進一步成長三維硒化鋅/碲硒化鋅異質分支奈米錐，其主幹與分支分別為軸向硒化鋅/碲硒化鋅異質奈米錐與純硒化鋅結構。由光致螢光光譜發現其在低溫下擁有約490奈米藍綠光波段的放射，且其較小的光致螢光強度可能是由於分支部分以及主幹與分支界面的缺陷所造成。

This thesis focuses mainly on the growth of one-dimensional (1D) ZnSe-based nanostructures by molecular-beam epitaxy (MBE), including ternary ZnSe0.95Te0.05 nanotips, twinned ZnSe0.9Te0.1 nanotips, ZnSe/ZnSeTe superlattice nanotips, and three-dimensional (3D) branched ZnSe/ZnSeTe heterostructure nanotips. Furthermore, the fabrication of ZnSeTe nanotip-based Metal-Semiconductor-Metal (MSM) photodetector was demonstrated.
ZnSe0.95Te0.05 nanotips were grown on Si(100) substrates by MBE system in the vapor-liquid-solid (VLS) growth process with an Au-based nanocatalyst. Average length of ZnSe0.95Te0.05 nanotips was 0.9 μm. The as-grown ZnSe0.95Te0.05 nanotips exhibited mixture of cubic zinc-blende and hexagonal wurtzite structures. With 5% Te incorporation, it was found that 20K photoluminescence (PL) peak red-shifted by 27 nm. Furthermore, ZnSe0.9Te0.1 nanotips were also grown by the same method. It was found that the as-grown ZnSe0.9Te0.1 nanotips were twinned with alternative multi-domains and mixture of cubic zinc-blend/hexagonal wurtzite phases. For the fabrication of ZnSe0.9Te0.1 nanotip photodetector, a thick Au film was deposited through an interdigitated shadow mask onto the ZnSe0.9Te0.1 nanotips by electron beam evaporation to serve as the contact electrodes. The measured photocurrent to dark current contrast ratio was larger than 700 with 5 V applied bias.
1D nanostructures with great complexity were also achieved. ZnSe/ZnSeTe superlattice nanotips with various well widths (Lw) were grown successfully. It was found that the ZnSe/ZnSeTe superlattice nanotips also exhibit mixture of cubic zinc-blende and hexagonal wurtzite structures. The observed PL intensities were much larger than that observed from the homogeneous ZnSeTe nanotips. Furthermore, the activation energies for the ZnSe/ZnSeTe nanotips with well widths of 16, 20 and 24 nm were 76, 46 and 19 meV, respectively. Based on the above-mentioned architecture, 3D branched ZnSe/ZnSeTe heterostructure nanotips were grown accordingly, in which the backbones and branches were composed of axial ZnSe/ZnSeTe heterostructures and ZnSe, respectively. PL spectra of the branched ZnSe/ZnSeTe nanotips present a visible blue-green emission at around 2.53 eV (490 nm) at low temperature, and the observed smaller PL intensity could be attributed to the formation of defects existing in the branches and/or the interfaces between backbone and branches.

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