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研究生: 黃才俊
Huang, Tsai-Jiun
論文名稱: 玻璃基板加法製程銅導線傳輸線特性研究
Research on the Transmission Line Characteristics of Copper Conductor Fabricated by Additive Processes on Glass Substrate
指導教授: 李文熙
Lee, Wen-Hsi
學位類別: 碩士
Master
系所名稱: 電機資訊學院 - 奈米積體電路工程碩士博士學位學程
MS Degree/Ph.D. Program on Nano-Integrated-Circuit Engineering
論文出版年: 2025
畢業學年度: 113
語文別: 中文
論文頁數: 120
中文關鍵詞: 加法製程銅沉積玻璃基板厚膜印刷傳輸損耗
外文關鍵詞: Additive process, Copper deposition, Glass substrate, Galvanic displacement
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  • 本研究提出一種新穎製作銅導線於玻璃基板上的技術,不同於常見減法製程,目標在結合厚膜鋁膏印刷技術與伽凡尼氧化還原化學置換反應,實現環保、製程更加簡單快速的的金屬線路於玻璃基板上。此技術利用厚膜鋁膏的低成本、高氧化電位和多孔性結構作為置換層膜,透過在玻璃基板上塗上鋁膏。賈凡尼效應下,將還原電位比鋁高的金屬(如銅、鎳)置換 出來,並將置換出的銅層作為銅晶種層進行電鍍。這一創新方式有效解決了傳統減法製程過程中的金屬廢液體,並結合電鍍技術製作高品質銅導線。
    製作銅導線的過程分為三個階段。首先,利用厚膜網版印刷鋁膏的加法製程,在模具上印刷出想要的鋁線路,接著在第二階段,通過無電鍍化學置換法,將鋁導電膏置換成金屬銅膜,避免使用有害物質,達到更高的環保標準,最後,利用厚膜鋁導電膏的多孔性結構,通過電鍍方式,將修補內部多孔結構,使結構更加緊密,提高銅導線的品質和附著力,同時降低製造成本。
    在實驗過程中,厚膜鋁漿的多孔性結構會導致鋁粉形成多孔陰極,使銅離子向內滲透,形成向下填孔電鍍的機制。本研究還在厚膜鋁漿中參雜硫酸銅粉末,提供額外 的銅離子,結果表明此方法可以促進向下電鍍,並改善電性。 透過OM、SEM 微結構和數據分析,本研究探討了不同置換條件和電鍍條件下,銅線路與基板附著力之間關係,以及電鍍層的結構和厚度變化,揭示多孔陰極 結構對電鍍過程的影響機制,提出改進方法,提高電鍍質量和薄膜附著力。研究結果將為 未來在印刷在玻璃基板上應用電化學銅導線製作提供重要的理論和實驗支持,並有助於優化工藝參數,拓展該技術在其他電子材料和元件製作中的應用潛力。

    This study addresses the growing need for environmentally friendly, low-cost, and high-performance interconnect fabrication for next-generation 3D/2.5D packaging. The objective is to develop a process for highly conductive copper films on rigid glass substrates, which offer low dielectric constant, low loss, and high planarity but suffer from poor adhesion.
    A novel additive approach is proposed, combining aluminum conductive paste screen printing, aluminum–copper galvanic displacement, and electroplating. The aluminum layer, with its high oxidation potential and porous structure, enables selective copper deposition without costly reducing agents or vacuum equipment. Electroplating further repairs voids, enhances density, and improves adhesion.
    Tests on glass substrates confirmed a continuous copper layer with excellent adhesion; tape peel showed no delamination, and pull-off strength reached 17.865 kg/cm². The method produced stable, uniform copper films for high-frequency applications while maximizing material use and avoiding copper-containing wastewater.
    The results confirm the feasibility of this low-temperature, scalable, and cost-effective process, making it a promising solution for future heterogeneous integration technologies.

    摘要 I Extended abstract II 致謝 XX 目錄 XXI 表目錄 XXIV 圖目錄 XXV 第一章 緒論 1 1.1 研究背景 1 1.2 實驗動機 2 1.3 章節概述 4 第二章 文獻回顧 5 2.1玻璃基板電器特性 5 2.1.1 RC 延遲 5 2.1.2 訊號傳遞損耗 6 2.2 化學置換原理 9 2.2.1化學置換反應 9 2.2.2影響化學置換反應參數 9 2.2.3添加劑的影響 11 2.3化學置換鋁銅金屬 12 2.3.1動力學模型 12 2.3.2鹵化物加速現象 15 2.3.3鋁粉(鋁球)置換銅 15 2.4表面粗糙度模型 17 2.5附著力測試 18 第三章 實驗步驟 23 3.1 實驗結構 23 3.2 實驗步驟 24 3.2.1金屬膏的調配 25 3.2.2玻璃基板清洗 26 3.2.3 旋轉塗佈鋁膏與樣品烘烤 26 3.2.4法製程介紹(賈凡尼置換反應) 27 3.2.5電鍍 29 3.2.6 3M膠帶附著力測試 30 3.2.7 量測 31 3.2.8 拉拔測試 32 3.3 實驗儀器 34 3.3.1 三輥研磨機 34 3.3.2 離心攪拌機 35 3.4 儀器分析設備 36 3.4.1描電子顯微鏡(SEM) 36 3.4.2 阻抗分析儀(LCR meter) 38 3.4.3 Romulus 正向拉力測量儀 39 第四章 結果與討論 41 4.1 置換添加劑分析 41 4.1.1 添加劑比較 43 4.1.2元素比例分析 46 4.1.3比較薄膜附著力 47 4.1.4 電鍍反應 48 4.1.5 SEM元素分布與比例圖分析 51 4.1.6 添加劑比較 53 4.1.7比較薄膜附著力 55 4.1.8 ETU與Ori置換液體之小結論 60 4.2 不同溫度下置換與附著力之關係 61 4.2.1表面及橫截面分析 61 4.2.2元素分布與比例分析 64 4.2.3膠帶測試 65 4.2.4電鍍後比較 66 4.2.5拉拔測試 67 4.2.6電性量測 69 4.3在鋁膏中參雜硫酸銅粉末之置換電鍍 70 4.3.1在鋁膏中參雜硫酸銅粉末之置換情況探討 70 4.3.2膠帶測試 82 4.3.3電鍍條件測試 84 第五章 結論 96 5.1置換電鍍對於附著力影響 96 5.2影響附著力之參數 96 5.3電性量測 97 第六章 參考文獻Uncategorized References 98

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