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研究生: 楊仁俊
Yang, Jen-Chun
論文名稱: 以化學氣相沉積法製備寬能隙鹵化鉛鈣鈦礦薄膜光電特性之研究
Research on the optoelectronic characteristics of wide-bandgap lead halide perovskite thin films prepared by chemical vapor deposition
指導教授: 賴韋志
Lai, Wei-Chih
學位類別: 碩士
Master
系所名稱: 理學院 - 光電科學與工程學系
Department of Photonics
論文出版年: 2020
畢業學年度: 108
語文別: 中文
論文頁數: 116
中文關鍵詞: 化學氣相沉積法甲基胺氯化鉛薄膜鈣鈦礦發光二極體發光波長調變
外文關鍵詞: chemical vapor deposition, Methylamine lead chloride film, MAPbCl3, perovskite light-emitting diode, emission wavelength modulation
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  • 本研究以化學氣相層積法製備甲基胺氯化鉛(MAPbCl3)鈣鈦礦薄膜,相較於一步法溶液製程,我們改善了其結晶速率過快與溶解度低的問題。首先我們探討不同退火溫度下氯化鉛(PbCl2)薄膜的結晶性,發現在低溫下是具有結晶性的緻密薄膜。接者我們在前驅溶液中加入不同比例苯乙胺(PEA)並分別與MABr加氯化膽鹼(C.C)以及MACl加上氯化膽鹼進行反應形成鈣鈦礦薄膜,並將其製備成鈣鈦礦發光二極體元件,在使用MACl加上C.C反應所製備元件發光波段在408nm的穩定紫色發光二極體,而使用MABr加上C.C所製備的元件,我們發現因為少量的溴離子存在於鈣鈦礦中,因而造成離子遷移效應使波長紅移至綠光波段。
    此外我們在前驅溶液中加上不同比例的PbBr2以成長MAPbBr3-xClx混和物鈣鈦礦薄膜,透過添加的來PbBr2控制x鹵素比例,我們將發光波段408 nm處能夠調變至450 nm處。

    In this study, the Methylamine Lead Chloride perovskite film was prepared by the chemical vapor deposition method. Compared with the one-step solution process, we improved the problem of excessive crystallization rate and low solubility. First, we explored the crystallinity of lead chloride films at different annealing temperatures and found that it is a dense film with crystallinity at low temperatures. Then we add phenethylamine in different proportions to the precursor solution and react with MABr plus choline chloride and MACl plus choline chloride to form a perovskite film, and used it to prepare a perovskite light-emitting diode device, using MACl plus CC reaction to prepare a stable purple light-emitting diode with a 408 nm emission band 408nm, and using MABr plus CC, we found that there is a small amount of bromide ion In the perovskite, the ion migration effect causes the red-shift of the wavelength to the green wavelength band.
    In addition, we add different proportions of PbBr2 to the precursor solution to grow a MAPbBr3-xClx mixture perovskite film. Through the addition of PbBr2 to control the x halogen ratio, we can modulate the emission band at 408 nm to 450 nm.

    目錄 摘要 II 致謝 VIII 目錄 IX 圖目錄 XIV 表目錄 XXI 第一章 序論 1 1-1前言 1 1-2研究動機 3 1-3論文大綱 4 第二章 鈣鈦礦發光二極體原理與製程 5 2-1鈣鈦礦發光二極體發展 5 2-2鈣鈦礦發光二極體製程技術 9 2-2-1旋轉塗佈法(Spin-Coating Method) 9 2-2-2物理氣相沉積(Physical Vapor Deposition,PVD) 11 2-2-3化學氣相沉積(Chemical Vapor Deposition,CVD) 13 2-3 鈣鈦礦發光二極體工作原理與元件結構 15 2-3-1載子注入 17 2-3-2載子傳輸 17 2-3-2載子產生與復合 18 2-4使用不同方法製程藍色鈣鈦礦發光二極體文獻回顧 19 2-5新型電洞傳輸層改善元件特性重要文獻 22 第三章 鈣鈦礦發光二極體製備流程與材料 23 3-1前言 23 3-2鈣鈦礦發光二極體材料特性 23 3-2-1氧化鎳(Nickel Oxide,NiO) 23 3-2-2甲胺氯化鉛(Methylammonium Lead Chloride) 25 3-2-3實驗所需材料及規格介紹 27 3-3 鈣鈦礦發光二極體製備流程 28 3-3-1陽極ITO製備流程 28 3-3-2電洞傳輸層製備流程 31 3-3-3主動層製備流程 32 3-3-4電子傳輸層製備流程 35 3-3-5陰極製備流程 36 3-4 元件量測與材料分析所用設備介紹 38 3-4-1紫外光-可見光吸收光譜儀 (UV-Vis) 38 3-4-2光致發光光譜儀 (Photoluminescence) 38 3-4-3 X光繞射儀(XRD) 39 3-4-4 掃描式電子顯微鏡(Scanning Electron Microscopy) 40 3-4-5 亮度-電流-電壓量測系統(L-I-V) 40 第四章 實驗結果與討論 41 4-1 前言 41 4-2 以化學氣相法沉積成長氯化物鈣鈦礦 42 4-2-1氯化鉛薄膜形貌、光學、晶體特性討論 42 4-2-2使用CVD將製備完成PbCl2薄膜反應形成鈣鈦礦之薄膜分析及討論 46 4-2-3本節結論 52 4-3 添加苯乙胺並以化學氣相法沉積成長鈣鈦礦 54 4-3-1添加不同比例苯乙胺至氯化鉛薄膜形貌、光學、晶體特性討論 54 4-3-2使用CVD將添加苯乙胺後的薄膜反應形成鈣鈦礦之薄膜分析及討論 62 4-3-3 PbCl2與PbCl2+PEA薄膜以化學氣相沉積反應形成鈣鈦礦薄膜並製成發光二極體 73 4-3-4 元件結構優化製成穩定鈣鈦礦發光二極體 76 4-3-5本節結論 81 4-4 添加溴化膽鹼並以化學氣相法沉積成長鈣鈦礦 83 4-4-1探討溴化膽鹼的加入對於薄膜形貌、光學、晶體特性 83 4-4-2添加溴化膽鹼以化學氣相沉積反應形成鈣鈦礦薄膜並製成發光二極體 93 4-4-3本節結論 96 4-5 添加溴化鉛於前驅溶液中調製發光波長並製備鈣鈦礦發光二極體 97 4-5-1探討溴化鉛的加入對於薄膜形貌、光學、晶體特性 97 4-5-2加入溴化鉛於前驅溶液中以化學氣相沉積成長混和物鈣鈦礦並製備鈣鈦礦發光二極體 106 4-5-3本節結論 108 第五章 總結與未來展望 109 5-1 總結 109 5-2未來展望 110 參考文獻 111

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