本研究致力於製備一維單晶二硒化銅銦奈米柱陣列並搭配有機導電漿料PEDOT形成核殼結構，應用於太陽能電池元件的吸收層，和以往平面結構的吸收層相比，奈米柱擁有更加突出的光電特性，期望可以有效提升元件整體的光電轉換效率。
本研究的成果如下，首先是銅銦硒奈米柱透過後續模板移除得到完整奈米柱，並疊上有機導電漿料。最後由電性量測得到，疊上導電漿料與未疊上漿料的結構相比，呈現更好的二極體特性，得到Io=36.9 nA。再來是將奈米柱結構做退火處理來改善結晶品質，由XRD量測得到CIS(112)之FWHM為0.425，晶粒大小為19.3nm，得到24.25:24.45: 51.30劑量比，而電性量測得到Io=49.1nA。吾人以氧化銦錫取代有機漿料，與BYK混合後，氧化銦錫與奈米柱之間的接觸角由原本的79.22度降低至10.11度，消除原本疏水性太過強烈的問題，亦有蕭特基二極體之特性。

CuInSe2 nanowire photovoltaic has been the subject of research with a view to enhancing the photo absorption efficiency and reducing the material consumption compared with bulk and thin-film PV. However, its surface recombination is a problem. Therefore, we use the core-shell structure to solve the problem. In this study, we employ the annealing process and tune the temperature to improve the crystallization of CIS nanowire. In I-V measurement, we obtained leakage current Io near 49.1nA. Then, we fabricated core-shell structure with PEDOT/CIS material to reduce the defects near the surface of nanowire. In I-V measurement, we obtained leakage current Io near 36.9nA.

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