近年來無線通訊網路之快速發展，射頻積體電路以矽為基礎的整合性元件工作頻率在GHz時，因此在MOSFET需要準確的模型來得到精確之電路模擬結果，是很重要的，此外低雜訊放大器為射頻積體電路接收器的第一級，它不但提供放大接收的訊號而且降低訊號雜訊在整個系統。
在本次論文中，我們主要研究分二部份，首先在第二章分析CMOS雜訊與頻率之相依性，同時閃耀雜訊為低頻主因雜訊，在高頻時為熱雜訊和閘極引發雜訊為主因雜訊，在更進一步探討，我們發現頻率在10GHz以上時，閘極引發雜訊更加的明顯。
第二部份設計雙頻和超寬頻低雜訊放大器其操作頻率分別為2.4/5.2GHz和3.1GHz~10.6GHz.雙頻設計使用電感，電容元件當作輸入阻抗匹配，輸出部份架構結合串聯和並聯共振達到輸出匹配;超寬頻低雜訊放大器結合共閘級輸入阻抗匹配和共電流架構來實現低成本，低功率消耗。
本論文中之電路設計是以TSMC 0.18 CMOS 製程之model進行模擬，並經CIC審核下線，最後完成晶片的量測。

In the recently years, the wireless communication system network trends of high data transmission and internet everywhere are increased day by day. As the operation frequency of Si-base integrates circuit’s increases to the gigahertz range for RF applications. Therefore, the MOSFET has requirement accurate noise model in the high frequency to predicative simulation result which is more important. On the other hand, The Low Noise Amplifier is the first block of the RF receiver. It not only provides enhanced received signals but also reduces the noise of the whole system.
This thesis primarily contains two parts. First, the analysis of analysis of the CMOS noise with frequency dependence in the chapter 2 as we know the 1/f noise dominates at low frequency. Meanwhile, thermal noise and the induced-gate noise dominate at high frequency. For more discussion details in chapter 2 that we find it significant that the induced-gate noise floor becomes obvious when the frequency is above 10GHz.
Second, the design Dual-band and UWB LNA respectively operate 2.4/5.2GHz and 3.1GHz ~10.6GHz are respectively. The Dual-band LNA using L-C component to create dual-band input impedance matching resonance and the output part architecture combine series resonance and Parallel resonance together to achieve output matching and later devised UWB LNA combine common gate for input matching and Current-Reuse with circuit architecture to accomplish low cost and low power consumption.
The experiment of designing Dual-band and UWB LNA with TSMC 0.18 m CMOS technology applies for CIC tapeout verification. Finally, we had measured IC chip.

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