由於氧化鋅材料具寬能階的直接能隙特性，被視為是在光電方面最具有發展潛力的材料之一；本論文利用RF磁控濺鍍法，成功的在玻璃基板上於室溫的氛圍中掺雜氮氣沈積出p type之氧化鋅薄膜。
　　由於未掺雜任何雜質的氧化鋅本身即為n type，對於光電元件材料的開發與應用需同時具備n type及p type的特性，然而p type 的氧化鋅在多年來發表的論文探討中皆顯示不易形成。本研究以氧化鋅靶材，掺雜不同的氮氣流量，在玻璃基板上沈積氧化鋅薄膜，沈積出p type之氧化鋅薄膜，為驗證溫度對薄膜的影響，經過100℃ 15分鐘及30分鐘退火處理後，比較其薄膜霍爾量测特性。
　　藉由數種儀器的檢測包括原子力顯微鏡、拉曼光譜、X光光電子能譜、紫外光-可見光穿透率及激發光光譜等，分析不同的氮氣流量掺雜的濺鍍條件探討氧化鋅薄膜的結構、光學與導電性質的變化；並參考目前已發表的文獻與本實驗的結果加以驗證討論。
　　本實驗於經過100℃ 15分鐘退火處理後得其最佳載子濃度為1.11×1018 cm-3 ，電阻為40.4 Ω‧㎝，遷移率為1.39cm2/V-sec。

　Zinc Oxide (ZnO) with the material character of wide and direct bandgap is one of the most potential materials for the development of the optoelectronics.
　The crystalline ZnO is naturally an n-type semiconductor. However, for the development of optoelectronic devices, it is necessary for one to have the material being able to be formed with both the n-type and p-type. A number of reports have been published for p-type measurements in ZnO films, while there still be no easy way to produce a good quality p-type ZnO. In this thesis, the feasibility study for p-type ZnO thin film manufactured by radio frequency sputtering technique were introduced under varied flow rate of nitrogen gas. To verify the temperature effect, we had check the Hall effect for annealing 100℃ for 15minutes and 30 minutes.
　The characteristics of the films were be checked by several instruments including AFM, Raman spectrum analysis, XPS, UV-Vis transmittance spectrum, and micro PL. By verified these results, relatively papers had been referred.
　After 100℃ 15 minutes annealing process, we had the optima concentration is around 1.11×1018 cm-3 , resistivity is 40.4 Ω‧㎝, mobility is 1.39cm2/V-sec.

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