本研究中探討以氣相的方式成長甲基胺溴化鉛 (CH3NH3PbBr3, MAPbBr3)的鈣鈦礦薄膜，不同於以往使用配置好的溶液去旋塗塗佈之製程方式，我們將鈣鈦礦薄膜分成兩部製程方法，首先利用旋轉塗佈法(spin coating)成長溴化鉛(PbBr2)結晶後，再將旋塗完的薄膜利用低壓化學氣相沉積(LPCVD)系統反應成鈣鈦礦薄膜，並控制系統中反應物甲基溴化胺(CH3NH3Br, MABr)的擴散反應時間、溫度及壓力等多項參數，進而得到多樣化的薄膜。
此外，我們也比較在溴化鉛前體溶液及化學氣相沉積系統內添加氯化膽鹼(Choline chloride, ChCl)後的鈣鈦礦薄膜特性，利用膽鹼中的陰陽離子與帶正電荷的欠配位Pb^2+離子結合，進而造成PbBr2薄膜形貌改變且氯離子能有效降低表面活化能以提升LPCVD系統的反應速率並可以形成更緻密光滑的薄膜。接著以搭配電子、電洞傳輸層的P-N結構，製作出性能穩定的鈣鈦礦有機發光二極體。在適當的PbBr2與ChCl莫耳數比、反應溫度與反應時間下能得到5,200 cd/m^2的最大發光亮度。

In this study, we explored the growth of a perovskite film of methylamine bromide in a gas phase. Different from the conventional process of using a solution to spin coating, we will use a perovskite film divided into two step.Firstly, the crystal of lead bromide is grown by spin coating, and then converted into a perovskite film by a low pressure chemical vapor deposition system. And control the reaction of the reaction product methyl bromide diffusion reaction time, temperature and pressure and other parameters, and then obtain a variety of films. In addition, we also compare the characteristics of perovskite film after adding choline chloride (ChCl) in lead bromide precursor solution and chemical vapor deposition system to produce a stable perovskite organic light-emitting diode. body. The maximum luminescence of 5,200 cd/"m" ^"2" can be obtained at a suitable PbBr2 to ChCl molar ratio, reaction temperature and reaction time.

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