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研究生: 黃胤展
Huang, Yin-Chan
論文名稱: 以射頻磁控濺鍍法沈積氧化鉬薄膜之結構與電致色變性質研究
The Structural and Electrochromic Properties of Molybdenum Trioxide Films Deposited by RF Magnetron Sputtering
指導教授: 李世欽
Lee, Shih-Chin
共同指導教授: 黃肇瑞
Huang, Jow-Lay
學位類別: 碩士
Master
系所名稱: 工學院 - 材料科學及工程學系
Department of Materials Science and Engineering
論文出版年: 2010
畢業學年度: 98
語文別: 中文
論文頁數: 101
中文關鍵詞: 電致色變射頻磁控濺鍍法氧化鉬α相結構
外文關鍵詞: electrochromism, molybdenum trioxide, r.f. magnetron sputtering, α-MoO3 phase structure
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  • 電致色變材料是近年來被廣泛研究的一種新興能源材料,它可以被應用在汽車和建築物之視窗玻璃上,以製作節省能源、調節光線及控制熱負荷之智慧型窗戶及液晶平面顯示器上。本實驗利用射頻磁控濺鍍法沉積氧化鉬薄膜,並探討各種濺鍍條件對薄膜成份、微結構、和電致色變性質的影響。
    實驗結果發現,隨著氧氣分率的增加,薄膜中的氧含量會隨之增加,使薄膜容易形成高化學計量比的α相結構;在高氧氣分率下沉積氧化鉬薄膜,薄膜具有較佳的可逆性,當氧氣分率為80% 時,在波長550nm 處,其著色去色之穿透率變化為35.50%,且具有較高的光學密度, 而薄膜之著色效率CE=23.81cm2/C。
    當以不同基板溫度沉積氧化鉬薄膜時,發現當基板溫度到達250℃時,薄膜即會開始結晶化,且隨著基板溫度從室溫增加到350℃時,氧化鉬薄膜的光能隙會從2.82eV 上升至3.07eV,這是因為基板提供足夠能量使氧化鉬薄膜堆積成具開放性通道的α相結構。當基板溫度在350℃時,薄膜具有最大的著色去色之穿透率變化為35.50%以及薄膜之著色效率CE=23.81cm2/C。

    Electrochromisms had been widely investigated as a new energy harvesting material due to its potential applications for smart window of architecture, automobile glazing to save energy, modulate the transmission of light and solar radiation and also liquid crystal displays. Therefore, the object of this study was focused on the effects of sputtering conditions on the composition, microstructure and electrochromic properties of molybdenum trioxide films prepared by r.f. magnetron sputtering.
    Experimental results indicated that with increasing oxygen partial pressures, oxygen content of the films was increased which was tend to form α-MoO3 phase structure with higher stoichiometry. The films deposited at oxygen partial pressure of 80% showed the best electrochromic reversibility, and the transmission change betweencolored and bleached states at a wavelength of 550nm was 35.50%. Also, the film exhibited higher optical density, and coloration efficiency was 23.81cm2/C.
    Then the molybdenum trioxide films were deposited under varied substrate temperature. It was also found that the crystallinity of films was obtained when the substrate temperature reached 250℃. As the substrate temperature increasing from room temperature to 350℃, the optical band
    gap increased from 2.82 to 3.07eV due to the formation of α-MoO3 structure with opening tunnel driven by the thermal energy acquired from the heating of the substrate. When the substrate temperature was 350℃, the films showed the best transmission change between colored andbleached states at a wavelength of 550nm was 35.50% and coloration efficiency was 23.81cm2/C.

    摘要……………Ⅰ 英文摘要………Ⅱ 誌謝……………Ⅳ 總目錄…………Ⅵ 表目錄…………Ⅹ 圖目錄…………XI 第一章 緒論...................1 1.1 前言.....................1 1.2 研究目的.................4 第二章 理論基礎...............6 2.1 電致色變簡介.............6 2.2 電致色變文獻回顧..........8 2.3 電致色變材料與性質.............9 2.4 氧化鉬電致色變材料之變色機制..............14 2.5 氧化鉬的結構................18 2.6 濺鍍原理.................21 2.6.1 電漿原理...............21 2.6.2 濺鍍原理............22 2.6.3 射頻磁控濺鍍...........25 2.6.4 反應性濺鍍...............27 2.7 薄膜的成核、成長理論....................29 第三章 實驗方法與步驟..........33 3.1 實驗流程圖............33 3.2 實驗材料...............34 3.3 基材前處理............35 3.4 鍍膜設備...................36 3.5 濺鍍步驟與條件..........39 3.6 鍍層的性質分析與測試方法.........................40 3.6.1 厚度量測............40 3.6.2 光學性質量測............40 3.6.2.1 紫外光-可見光光譜儀........................40 3.6.2.2 光致螢光激發光譜儀.................41 3.6.3 成份和化學鍵結分析.....................42 3.6.4 結晶型態分析..............42 3.6.5 微結構觀察............42 3.6.6 電化學反應分析...........43 第四章 結果與討論............46 4.1 氧氣分率對氧化鉬薄膜性質的影響.............46 4.1.1 反應濺鍍速率...............46 4.1.2 化學組成..........49 4.1.3 結晶型態分析.............53 4.1.4 微結構觀察........55 4.1.5 光學性質.......58 4.1.5.1 紫外光-可見光光譜分析............58 4.1.5.2 光致螢光激發光譜分析.............58 4.1.6 電致色變性質..............66 4.2 基板溫度對氧化鉬薄膜性質的影響.........75 4.2.1 反應濺鍍速率...............75 4.2.2 化學組成........77 4.2.3 結晶型態分析...............79 4.2.4 微結構觀察..............81 4.2.5 光學性質.......83 4.2.5.1 紫外光-可見光光譜分析............83 4.2.5.2 光致螢光激發光譜分析.............84 4.2.6 電致色變性質............88 第五章 結論...........93 參考文獻............96 自述...............101

    [1]涂逢祥, 節能窗技術: 中國建築工藝出版社, 2003.
    [2]M. Santamouris, Solar Energy: The State of the Art. London: James & James Science Publishers, 2001.
    [3]何國川, "電化學與無窗時代," 化工, vol. 37, pp. 32-42, 1990.
    [4]吳永豪, "智慧窗與玻璃塗層," 工業材料雜誌, vol. 207, pp. 136-149, 2004.
    [5]C. G. Granqvist, et al., "Recent advances in electrochromics for smart windows applications," Solar Energy, vol. 163, pp. 199-216, 1998.
    [6]Y. Zhang, et al., "Preparation and electrochromic properties of Li-doped MoO3 films fabricated by the peroxo sol-gel proces," Applied Surface Science, vol. 165, pp. 56-59, 2000.
    [7]I. Navas, et al., "Growth and characterization of molybdenum oxide nanorods by RF magnetron sputtering and subsequent annealing," Journal of Physics D: Applied Physics, vol. 42, pp. 15305-15312, 2009.
    [8]P. M. S. Monk, et al., Electrochromism Fundamentals and Applications: Vch Verlagsgesellschaft Mbh, 1995.
    [9]謝育忠, "電漿濺鍍電致色變氧化鎳薄膜特性研究及節能評估," 中原大學化學工程學研究所碩士論文, 2002.
    [10]J. R. Platt, "Electrochromism, a possible change of color producible in dyes by an electric field," Journal of Chemical Physics, vol. 34, pp. 862-863, 1961.
    [11]S. K. Deb, "A novel electrophotographic system," Applied Optics, vol. 3, p. 192, 1969.
    [12]S. K. Deb, U. S. Patent 3, vol. 521, p. 941, 1970.
    [13]J. W. Rabalais, et al., "Trapped electrons in substoichiometric MoO3 observed by X-ray electron spectroscopy," Chemical Physics Letters, vol. 29, p. 131, 1974.
    [14]B. W. Faughnan, et al., "Electrochromism in WO3 Amorphous Films," R.C.A Review, vol. 36, pp. 177-197, 1975.
    [15]陳建全, "普魯士藍類似物薄膜電極之製備及其電致色變性質," 國立成功大學化學工程學系碩士論文, 1995.
    [16]胡景彬, "全固態電致色變材料與元件之研製," 崑山科技大學電子工程研究所碩士論文, 2003.
    [17]王武章, "反應磁控濺鍍氧化鎢薄膜之電致色變性質研究," 國立成功大學材料及工程學系研究所碩士論文, 2005.
    [18]P. R.Somani and S. Radhakrishnan, "Electrochromic materials and devices: present and future," Materials Chemistry and Physics, vol. 77, pp. 117-133, 2002.
    [19]S. Hashimoto and H. Matsuoka, "Mechanism of electrochromism for amorphous WO3 thin films," Journal of Applied Physics, vol. 69, p. 933, 1991.
    [20]S. K. Deb, "Reminiscences on the discovery of electrochromic phenomena in transition metal oxides," Solar Energy Materials and Solar Cells, vol. 39, pp. 191-201, 1995.
    [21]O. F. Schirmer, et al., "Dependence of WO3 Electrochromic Absorption on Crystallinity," Journal of the Electrochemical Society, vol. 124, pp. 749-753, 1977.
    [22]A. D. Sayede, et al., "An ab initio LAPW study of the a and b phases of bulk molybdenum trioxide, MoO3," Chemical Physics vol. 316, pp. 72-82, 2005.
    [23]J. M. Song, et al., "Synthesis of metastable h-MoO3 by simple chemical precipitation," Materials Chemistry and Physics, vol. 102, pp. 245-248, 2007.
    [24]T. Tsumura and M. Inagaki, "Lithium insertion/extraction reaction on crystalline MoO3," Solid State Ionics, vol. 104, pp. 183-187, 1997.
    [25]黃憲法, "β 型三氧化鉬的性質 , 用途及生產," 中國鉬業, vol. 24, pp. 27-29, 2000.
    [26]馬成兵, "正交晶系MoO3(β-MoO3)的結構特徵及其應用," 稀有金屬與硬質合金, vol. 32, pp. 35-38, 2004.
    [27]J. M. Song, et al., "Preparation of hexagonal-MoO3 and electrochemical properties of lithium intercalation into the oxide," Materials Research Bulletin, vol. 40, pp. 1751-1756, 2005.
    [28]N. Kumagai and K. Tanno, "Electrochemical and structural characteristics of molybdic acid as a new cathode material for nonaqueous lithium batteries," Electrochimica Acta, vol. 32, pp. 1521-1526, 1987.
    [29]S. Komaba, et al., "Molybdenum oxides systhesized by hydrothermal treatment of A2MoO4 (A=Li,Na,K) and electrochemical lithium intercalation into the oxides," Solid State Ionics, vol. 152-153, pp. 319-326, 2002.
    [30]J. P. Ramos and N. Kumagai, "Low temperature molybdenum oxide as host lattice for lithium intercalation," Journal of Power Sources, vol. 56, pp. 87-90, 1995.
    [31]高正雄, 超LSI時代-電漿化學. 台南市: 復漢出版社, 1999.
    [32]羅吉宗, 薄膜科技與應用. 台北市: 全華科技圖書股份有限公司, 2004.
    [33]楊錦昌, "基礎濺鍍電漿," 電子發展月刊, vol. 68, p. 13, 1983.
    [34]B. Chapman, Glow Discharge Processes. New York: John Wiley & Sons, 1980.
    [35]S. J. Cai, et al., "High performance AlGaN/GaN HEMT with improved ohmic contacts," Electronics Letters, vol. 34, p. 2354, 1998.
    [36]李玉華, "透明導電膜及其應用," 科儀新知, vol. 12, p. 94, 1980.
    [37]白木靖寬, 薄膜工程學. 台北市: 全華科技圖書股份有限公司, 2004.
    [38]J. Venables, "Nucleation and Growth of Thin films," Progress in Physics, vol. 47, pp. 399-459, 1984.
    [39]L. Eckertova and T. Ruizicka, Diagnostics and Applications of Thin Films: Institute of Physics Publishing 1993.
    [40]L. J. Vossen and W. Kerm, "Thin Film Process," Academic Process, p. 134, 1999.
    [41]楊錦章, "基礎濺鍍電流," 電子發展月刊, vol. 68, pp. 13-40, 1983.
    [42]S. M. Rossnagel, Handbook of Plasmas Processing Technology. Park Ridge, New Jersey, U.S.A: Noyes Publications, 1982.
    [43]Y. Igasaki and H. Saito, "The effects of zinc diffusion on the electrical and optical properties of ZnO:Al films prepared by r.f. reactive sputtering," Thin Solid Films, vol. 199, pp. 223-230, 1991.
    [44]C. Kittel, Introduction to Solid Physics, 7th ed.
    [45]V. Nirupama, "Effect of oxygen partial pressure on the structural and optical properties of dc reactive magnetron sputtered molybdenum oxide films," Current Applied Physics vol. 10, pp. 272-278, 2010.
    [46]R. Sivakumar, et al., "Characterization on electron beam evaporated α-MoO3 thin films by the influence of substrate temperature," Current Applied Physics, vol. 7, pp. 51-59, 2007.
    [47]Y. Zhao, et al., "Preparation of MoO3 nanostructures and their optical properties," Journal of Physics: Condensed Matter, vol. 15, pp. L547-L552, 2003.
    [48]S. S. Lin and J. L. Huang, "The effect of thickness on the properties of heavily Al-doped ZnO films by simultaneous rf and dc magnetron sputtering," Ceramics International, vol. 30, pp. 497-501, 2004.
    [49]V. K. Sabhapathi, et al., "Optical absorption studies in molybdenum trioxide thin films," Physica Status Solidi (a), vol. 148, pp. 167-173, 1995.
    [50]D. Yang and L. Xue, "Structures and electrochromic properties of Ta0.1W0.9Ox thin films deposited by pulsed laser ablation," Thin Solid Films, vol. 469-470, pp. 54-58, 2004.
    [51]李正中編著, 薄膜光學與鍍膜技術: 藝軒圖書出版社, 2006.
    [52]K. S. Shamala, et al., "Studies on un doped and antimony doped tin oxide films prepared by electron beam evaporation and pyrolysis method," Bulletin of Material Science, vol. 27, pp. 295-301, 2004.
    [53]R. A. Smith, Semiconductors, 2nd ed. London: Cambridge University Press, 1979.
    [54]M. Yahaya, et al., "Optical properties of MoO3 thin films for electrochromic windows," Solid State Ionics, vol. 113-115, pp. 421-423, 1998.
    [55]C. Julien, et al., "Electrochemical studies of lithium insertion in MoO3 films," Solid State Ionics, vol. 53-56, pp. 400-404, 1992.
    [56]J. Scarminio, et al., "Electrochromism and photochromism in amorphous molybdenum oxide films," Thin Solid Films, vol. 302, pp. 66-70, 1997.
    [57]T. M. McEvoy and K. J. Stevenson, "Electrochemical Preparation of Molybdenum Trioxide Thin Films: Effect of Sintering on Electrochromic and Electroinsertion Properties," Langmuir, vol. 19, pp. 4316-4326, 2003.
    [58]L. Zheng, et al., "Novel metastable hexagonal MoO3 nanobelts: synthesis, photochromic, and electrochromic properties," Chemistry of Materials, vol. 21, pp. 5681-5690, 2009.
    [59]M. G. Hutchins and N. A. Kamel, "Effect of oxygen content on the electrochromic properties of sputtered tungsten oxide films with Li+ insertion," Vacuum, vol. 51, pp. 433-439, 1998.
    [60]C. Brigouleix, et al., "Roll-to-roll pulsed dc magnetron sputtering deposition of WO3 for electrochromic windows," Electrochimica Acta, vol. 46, pp. 1931-1936, 2001.
    [61]S. Badilescu, et al., "FT-IR/ATR study of lithium intercalation into molybdenum oxide thin film," Applied Spectroscopy, vol. 47, 1993.
    [62]H. Yamada, et al., "Stress reduction for hard amorphous hydrogenated carbon thin films deposited by self-bias method," Thin Solid Films, vol. 270, pp. 220-225, 1995.
    [63]W. Q. Yang, et al., "Strong influence of substrate temperature on the growth of nanocrystalline MoO3 thin films," Physics Letters A, vol. 373, pp. 3965-3968, 2009.
    [64]S. Uthanna, et al., "Substrate temperature influenced structural, electrical and optical properties of dc magnetron sputtered MoO3 films," Applied Surface Science, vol. 256, pp. 3133-3137, 2009.
    [65]G. S. Nadkarni and J. G. Simmons, "Electrical properties of evaporated molybdenum oxide films," Journal of Applied Physics, vol. 41, pp. 545-551, 1970.
    [66]J. Song, et al., "Fabrication and photoluminescence properties of hexagonal MoO3 rods," Solid State Sciences, vol. 8, pp. 1164-1167, 2006.

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