近幾年來，奈米結構半導體已成為重要的研究課題，尤其Ⅲ-Ⅴ族半導體更是成為熱門研究材料之一。其中Ⅲ-Ⅴ族半導體奈米線對於電子、電洞及光子有強烈的二維量子侷限效應，促使其適合發展為奈米級的電子及光電元件。

本篇研究論文主要目的在於成長高品質氮化鎵奈米線、探討其成長參數以及材料特性，並將其應用來製作奈米線光偵測器。GaN 奈米線成長方法利用化學氣相沈積法（CVD），以金屬合金化合物為催化劑，經由Vapor–Liquid–Solid ( VLS ) 機制成長出直徑範圍介於60 - 100nm，長度可達數十毫米的氮化鎵奈米線。藉改變催化劑、反應參數、等實驗條件控制GaN奈米線的直徑、長度、數量密度和晶體形態。並以X光粉末繞射儀、掃瞄式電子顯微鏡、能量散佈儀和穿透式電子顯微鏡來檢測所合成出來的氮化鎵奈米線晶體。

經由X光粉末繞射圖譜、電子繞射圖譜、晶格影像圖分析發現，氮化鎵奈米線晶體為wurtzite結構。經由穿透式電子顯微鏡分析氮化鎵奈米線，發現其晶體為單晶結構，並以光激發光譜解析其成長的氮化鎵奈米線之光特性，其發光波長紅移至385nm。

利用氮化鎵奈米線製作光偵測器，其優點在於奈米線表面積相大於薄膜式光偵測器之表面積，有較大之受光面積，且二維量子侷限效應限制載子傳輸路線沿奈米線方向傳播，可提高元件之量子效率。本篇論文利用隨機分佈之氮化鎵奈米線製作光偵測器，量測發現，製作之元件於
300-500nm 照光波長下，確實有較大之光電流特性，初步展示此一光偵測器結構之可行性。

In recent years, semiconductor-based nanostructures have become one of the most important research topics, especially for III-V semiconductors.
Exploiting the quantum confinement effect of Ⅲ-Ⅴ semiconductor nanowires to confine the electron and hole helps to promote the development of nanoscale electronics and optoelectronics.

The purpose of the study is to grow high quality GaN nanowires and to discuss their growth conditions and material characteristics. The synthesized GaN nanowires are then used to fabricate nanowire-based photodetectors. The
chemical vapor deposition (CVD) method is adopted to grow GaN nanowires based on the vapor–liquid–solid (VLS) mechanism which relies on the usage of catalyst. By using this technique, the GaN nanowires with 60-100nm in diameter and tens of micrometers in length are subsequently obtained. The diameter, length, quantity and lattice structure of GaN nanowires can be effectly controlled by judiciously selecting the catalyst and the corresponding reaction parameters. The characterizations of synthesized GaN nanowires are pursued using combination of XRD, SEM, EDS and TEM
techniques. The wurtzite structure and single crystal of GaN nanowires are verified by XRD and TEM. A red shift of wavelength toward 385 nm is also confirmed by PL spectroscopy.

The unique advantage of GaN nanowire-based photodetectors is of their larger surface of illumination compared to conventional thin-film GaN
photodetector. In addition, the carriers can propagate along the direction of nanowire which helps to improve the corresponding quantum efficiency. Our measurements show that, higher current is detected when the device is exposed to 300-500nm wavelength range of light compared to the condition under darkness. These results reveal the feasibility of adapting the nanoscale structures into the conventional thin-film based optoelectronic devices.

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