本論文主要探討PVK 緩衝層對於氧化鋅/硫氰酸亞銅異質接面光檢
測表現之研究。製程主要採用低成本的方式，將硫氰酸亞銅薄膜電鍍在
ITO 玻璃基板上，接著在硫氰酸亞銅薄膜上旋轉塗佈PVK薄膜，使用不
鏽鋼金屬遮罩定義預鍍製氧化鋅晶種層之區域後，再利用化學水浴法合
成氧化鋅奈米柱陣列，最後濺鍍ITO 電極。本實驗透過X 光繞射儀
（XRD）、掃描式電子顯微鏡（SEM）、紫外光/可見光光譜儀，對製備的
薄膜進行晶體結構、表面形貌、薄膜界面進行分析。
接著，進一步量測及分析PVK 緩衝層對氧化鋅/硫氰酸亞銅異質接面二極體光電特性之影響。在紫外光波段照射下，氧化鋅/PVK/硫氰酸亞銅二極體和氧化鋅/硫氰酸亞銅光二極體在 -1 V偏壓下，光暗電流比分別為224.69 和4.96，紫外光-可見光拒斥比分別為140.98 和3.88，較
好之光電特性主要歸功於PVK緩衝層可明顯改善界面缺陷，導致較低的
漏電流。

This thesis investigates the effects of a poly-(N-vinylcarbazole)(PVK) intermediate layer
on the performance of n-ZnO nanorods/p-CuSCN heterojunction photodiodes. p-CuSCN
thin- film was electrodeposited on a low-cost fabrication indium tin oxide (ITO) glass
substrate. Subsequently, an organic PVK layer was spin-coated onto the CuSCN film
followed by ZnO nanorods synthesis on a patterned ZnO seed layer using a chemical bath
deposition (CBD) method. This thesis analyzes the crystalline phase, surface
morphologies, and energy band gap of the films through an x-ray diffractometer, a
scanning electron microscope, and a UV-VIS-NIR spectrophotometer, respectively.
The effects of PVK buffer layer on the performance of n-ZnO/p-CuSCN thin film
heterojunction photodetectors are investigated. Under UV light illumination, the
photo/dark current ratios of the n-ZnO/PVK/p-CuSCN and n-ZnO/p-CuSCN photodiodes
under -1 V bias are 224.62 and 4.96, while those of the UV-visible rejection ratios are
140.98 and 3.86, respectively. According aforementioned results, a PVK buffer layer can
minimize the influence of the interface defects between ZnO and CuSCN layers, and
therefore reduce its leakage current.

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