本研究所製作之氧化鎳薄膜電晶體由磁控式射頻濺鍍系統(magnetron radio frequency sputtering system)所沉積，因需要有良好的薄膜電晶體特性，故需要有較佳的氧化鎳薄膜，首先利用磁控式射頻濺鍍系統沉積氧化鎳薄膜，藉由調變不同的射頻功率、氣體流量以及熱處理溫度，並利用霍爾量測系統(Hall measurement)與X光繞射分析儀(X-Ray Diffraction, XRD)進行分析，以尋求較佳之氧化鎳薄膜特性。而在分析結果顯示，在腔體壓力為10 mtorr、射頻功率為125 W時，氧氣流量比例在N2:O2 = 10:40 sccm (Opp = 80%)，以400oC氧氣熱退火處理，所得到的濃度為2.32×1017 cm-3，電阻率值為4.23×102 Ω-cm，載子遷移率為最高，其值為7.42×10-1 cm2/V-s，而在XRD分析中薄膜結晶性為最佳，晶粒大小為18.9 nm。之後進行不同氧流量比例之氧化鎳薄膜電晶體之製作並分析其特性，結果也顯示以氧流量比例N2:O2=10:40 sccm (Opp = 80%)為通道層之條件特性為最佳，在VGS= -4 V下，飽和汲源極電流約為3.7 μA，次臨界斜率S.S值約為0.38 V/decade，場效載子遷移率為0.329 cm2/V-s，電流開關比為104。

The nickel oxide based thin film transistor fabricated in this research was deposited by magnetron radio frequency sputtering system. Due to the need of better thin film transistor performance, we need the nickel oxide thin film with better electrical property. In the beginning of the experiment, we deposited the nickel oxide thin film by the radio frequency magnetron sputtering system via varying the radio frequency power, gas flow and post-deposition annealing. In order to have better nickel oxide thin film property, we did the Hall and X-ray diffraction measurement to analyze it. The measurement result showed that optimized thin film property produced at deposition condition with 10mtorr working pressure, 125W radio frequency power, gas flow ratio with N2: O2= 10: 40 sccm (Opp = 80%) and 400oC post-deposition annealing by oxygen. And the Hall measurement showed the thin film with 2.32× 1017 cm-3 in carrier concentration, 4.23× 102 Ω-cm in resistivity and the highest carrier mobility with 7.42×10-1 cm2/V-s. Meanwhile in the XRD measurement, we also got the optimal thin film crystallinity with 18.9 nm grain size in average. Later we started analyzing the nickel oxide based thin film transistor fabrication by varying the oxygen flow ratio. The result showed that optimized transistor performance with saturation current 3.7 μA, subthreshold swing 0.38 V/decade, field effect mobility 0.329 cm2/V-s and current on-to-off ratio with 104 and this produced also under oxygen flow ratio with N2: O2= 10: 40 sccm (Opp = 80%).

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