| 研究生: |
吳晉翰 Wu, Jin-Han |
|---|---|
| 論文名稱: |
電子注入層對於高分子發光二極體之磁電導與磁電激發光響應 The effects of electron injection layers on magnetoconductance and magnetoelectroluminescent in polymer light emitting diodes |
| 指導教授: |
溫添進
Wen, Ten-Chin |
| 學位類別: |
碩士 Master |
| 系所名稱: |
工學院 - 化學工程學系 Department of Chemical Engineering |
| 論文出版年: | 2012 |
| 畢業學年度: | 100 |
| 語文別: | 中文 |
| 論文頁數: | 95 |
| 中文關鍵詞: | 磁電導 、磁電激發光 、高分子發光二極體 |
| 外文關鍵詞: | magnetoconductance, magnetoelectroluminescent, polymer light emitting diode |
| 相關次數: | 點閱:72 下載:1 |
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本論文研究主要著重於電子注入層對於高分子發光二極體(Polymer Light-Emitting Diodes,PLEDs)之磁電導(magnetoconductance,MC)與磁電激發光(magnetoelectroluminescent,MEL)之影響,藉由元件在磁場下的電性的改變推斷磁場對於激子(exciton)與載子(carrier)之影響,進一步探討各電子注入層之作用機制。
實驗中分別以四辛基溴化銨、氟化鋰與硼氫化鈉為電子注入層,與無電子注入層之元件比較,實驗結果顯示電子注入層的確具有增進電流密度之能力並且提升元件外部量子效率,為探討各電子注入層之注
入機制,將元件放入磁場進行磁場響應量測,在此實驗中發現電流與亮度皆受到磁場影響,且不同的電子注入層對於磁場量測圖形之形狀亦有不同的影響,為探討這些形狀所代表之意義,使用方程式模擬的方法將所有圖形數據化並利用在不同電壓下參數的改變推斷其所代表之可能物理現象。
從模擬結果推斷,主要影響磁電導與磁電激發光的主要原因有三個:第一個為激子間的橫向傳輸能力;第二個為激子-載子交互作用力;第三個為缺陷-載子交互作用力,最後由這三個現象的改變判斷各電子注入層對於元件內部載子行為之影響。
In this thesis, the study is focus on effects of electron injection layers on magnetoconductance (MC) and magnetoelectroluminescent (MEL) in polymer light emitting diodes. By the change of electrical properties, we could infer the effect on exciton and carrier in the devices with magnetic field. Further, we could investigate the mechanism of electron injection layers.
In the experiment, we used tetraoctylammonium bromide, lithium fluoride and sodium borohydride as electron injection layers to fabricate devices. We compared electrical properties between devices with electron injection layers and without electron injection layers. The results show that electron injection layers do enhance the current density of devices and increasing the external quantum efficiency. To study the mechanism of electron injection layers, we put devices on magnetic field measuring electrical properties. This result demonstrated that current and brightness of device are dependent on magnetic field and the curves are different with electron injection layers. To unravel the meaning of curves, we used fitting method to simulate curves of MC and MEL at different bias than deducing the physics phenomenon from the result of simulation.
From the result of simulation, there are main effects on MC and MEL curves. First one is intersystem crossing between excitons. Second one is exciton-charge interaction. The last one is trap –charge interaction. In the final, we determined the effects of device with different electron injection layers from the three mechanisms.
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校內:2017-07-20公開