當微米週期結構尺寸接近入射光波長，表面結構會與入射光交互作用進而產生繞射，其中兩個影響繞射方向與強度分布的因素便是材料光學常數與結構形貌。雖然此二者在結構製作後亦同時決定，然而，他們仍可透過溫度變化被同時調變，進而影響繞射效率與繞射角。故本研究將開發一可溫控散射儀平台，以實驗探討並呈現前述現象。所開發儀器樣本溫度範圍為 -75 °C ~ 500 °C、可量測入射角範圍在1° ~ 70°。本文以波長660 nm線性偏振光照射矽一維微米週期結構，成功量測入射角1° ~ 70°時，不同溫度下零階繞射效率；另外也量測入射角0°、30°時，共平面繞射能量之空間分布，結果呈現了繞射效率隨溫度上升而增加，其趨勢與模擬結果相符合，也具體表現溫度對於繞射效率的影響，未來應用包括：非接觸線上檢測週期結構樣本溫度、熱放射器或吸收器設計依據以及利用溫度驅動光學元件等。

While electromagnetic waves incident on the periodic microstructure, the structure interact with the electromagnetic waves and form the diffractions. The properties of diffractions are effected by the material optical constants and the size of the periodic structure. Although both of these are decided by the production process, they still could be changed by the temperature and effect the diffraction efficiency and diffraction angle of the sample. In order to demonstrate the phenomenon above, we developed a temperature controllable scattermeter, the temperature range is -75~500°C and measurable incident angle is 1~70°. And measure the silicon and gold plate sample to demonstrate the measurement capacity of the scattermeter. In this research, we measure the zeroth order diffractions, normal incident diffractions and oblique incident diffractions of silicon one-dimensional periodic microstructure by 660 nm laser at different temperature. The results demonstrate that the diffraction efficiency increase and the diffraction angle close to the direction of the zeroth order diffraction as the temperature raising. The measurement results are fitted with the simulation results. The applications in the future included non-contact on-line detection of periodic structure temperature, the design basis of thermo-emitter and thermo-absorber, and driving the optical elements by temperature.

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