| 研究生: |
林宜學 Lin, Yi-Shiue |
|---|---|
| 論文名稱: |
利用傅式轉換紅外光譜儀研究甲酸根和甲醯胺在中孔洞二氧化矽表面上的吸附與光化學反應 FTIR Study of the Adsorption and Photochemistry of Formate and Formamide on Mesoporous SiO2 |
| 指導教授: |
林榮良
Lin, Jong-Liang |
| 學位類別: |
碩士 Master |
| 系所名稱: |
理學院 - 化學系 Department of Chemistry |
| 論文出版年: | 2005 |
| 畢業學年度: | 93 |
| 語文別: | 中文 |
| 論文頁數: | 65 |
| 中文關鍵詞: | 傅式轉換紅外光譜儀 、中孔洞二氧化矽 、光化學反應 |
| 外文關鍵詞: | Photochemistry, Mesoporous SiO2, FTIR |
| 相關次數: | 點閱:71 下載:3 |
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中孔洞SiO2的製備和結構已被廣泛的探討而且催化反應中也被用來做為支撐介質。但中孔洞SiO2的有機分子的吸附和光化學則尚未深入、有系統的研究。本篇論文在真空系統中,利用傅氏轉換紅外光譜儀(FTIR)研究甲酸根(Formate)和甲醯胺(Formamide)在中孔洞SiO2表面上的吸附及光化學反應。
甲酸根在中孔洞SiO2表面受到325 nm的光照射時,甲酸根會光分解成CO2(g)。325 nm(~4eV)UV光不能夠使SiO2(band gap ~9eV)激發,因此,不像TiO2一樣產生電子-電洞對而使得甲酸根分解成CO2。推測甲酸根在中孔洞SiO2上的光分解是經由吸附相甲酸根的電子轉移到SiO2上然後再分解成CO2。
甲醯胺在35 oC時,同時會以分子性吸附(HCONH2(a))以及可能斷C-N鍵和N-H鍵而分解性吸附(HCOO(a)、NH(a)或N2O(a))在表面上。吸附相的甲醯胺在有氧或無氧下照光皆會分解而產生HCOO(a), NCO(a)或OCN(a)之表面物種的光產物。
Fabrication and structural characterization of mesoporous silica have been extensively explored. These materials are also used as supports in catalysis. However the adsorption and photoreactions of organic adsorbates on mesoporous silica have not yet been symtematically and intensively investigated. This paper employes Fourier-transformed infrared spectroscopy to study the adsorption and photoreactions of formate (HCOO) and formamide (HCONH2) on mesoporous SiO2 in a vacuum system.
The adsorbed HCOO decomposes into CO2(g) under irradiation at 325nm. Because the light used was unable to excite the band gap (~9ev), unlike the case of TiO2, photoholes from band gap excitation are not considered to be the initation species for the formate decomposition. It is suggested that the photoinduced decomposition of HCOO on the SiO2 proceeds via electron transfer in a direction from adsorbed HCOO to SiO2.
Formamide can be adsorbed with intact molecular form (HCONH2(a)) and dissociative form (HCOO(a), NH(a) or N2O(a)) on the surface at 35 oC. For the adsorbed HCONH2, HCOO(a), NCO (isocyanate) or OCN (cyanate) are generated under irriation at 325 nm in the presence or absence of O2.
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