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| 研究生： |
李嘉鳴 Li, Chia-Ming |
|---|---|
| 論文名稱： |
以電漿氮化高參雜硼矽(111)基板之方式磊晶成長六方氮化硼薄膜 Epitaxy of Hexagonal Boron Nitride Thin Film by Plasma Nitridation of Heavily Doped Si:B |
| 指導教授： |
吳忠霖
Wu, Chung-Lin |
| 學位類別： |
碩士 Master |
| 系所名稱： |
理學院 - 物理學系 Department of Physics |
| 論文出版年： | 2013 |
| 畢業學年度： | 101 |
| 語文別： | 中文 |
| 論文頁數： | 62 |
| 中文關鍵詞： | 六方氮化硼 、高溫電漿氮化 、磊晶成長 、掃描式電子穿隧顯微鏡 、低能繞射電子儀 |
| 外文關鍵詞： | h-BN, plasma nitridation, epitaxy, STM, LEED |
| 相關次數： | 點閱：84 下載：2 |
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在本論文中，我們希望能以嶄新的方式成長六方氮化硼：以高參雜硼的矽(111)晶圓為基板，對其進行熱處理使硼析出至表面。再利用電漿氮化的方式將氮置入表面，並進行後退火讓樣品有足夠能量產生鍵結。制備樣品後我們利用低能電子繞射儀(LEED)及掃瞄式穿隧電子顯微鏡(掃描式穿隧電子顯微鏡(STM))觀察成長結果。
在低能電子繞射儀(LEED)的量測已成功的量測到與六方氮化硼晶格常數相同的繞射圖形。但掃描式穿隧電子顯微鏡(掃描式穿隧電子顯微鏡(STM) )目前仍無法獲得六方氮化硼的實空間影像。即使如此，經由許多參數的成長經驗我們仍發現了一些特殊的現象可供以後的研究者參考。
此外，我們也試著模擬在本系統所成長的六方氮化硼實空間中的影像，這部分可以使後續的原子級表面影像研究更容易進行。
Few-layers Hexagonal boron nitride(h-BN) thin film had been grown on heavily doped Si(111):B sample by thermal process and N2 -plasma nitirdation followed by annealing at high temperature. Growth result was investigated by low-energy electron diffraction (LEED) and scanning tunneling microscope (STM). Lattice constant and crystal orientation measured in LEED patterns was showed the formation of few-layers h-BN with silicon-boron reconstruction. However, h-BN image couldn’t be observed by STM while system condition could reach atomic resolution to obtain images of silicon-boron reconstruction even in very small region. To illustrate the discrepancy result in LEED and STM measurement, different methods were used to simulate surface morphology and provided a possible explanation.
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校內：2015-07-12公開校外：2018-07-12公開