| 研究生: |
陳石育 Chen, Shi-Yu |
|---|---|
| 論文名稱: |
N型有機場效電晶體之高分子閘介電層研究 The study of Polymer Gate Dielectrics on N-type Organic Field-Effect Transistor |
| 指導教授: |
郭宗枋
Guo, Tzung-Fang |
| 學位類別: |
碩士 Master |
| 系所名稱: |
理學院 - 光電科學與工程研究所 Institute of Electro-Optical Science and Engineering |
| 論文出版年: | 2007 |
| 畢業學年度: | 95 |
| 語文別: | 中文 |
| 論文頁數: | 113 |
| 中文關鍵詞: | 有機場效電晶體 |
| 外文關鍵詞: | OFET |
| 相關次數: | 點閱:96 下載:5 |
| 分享至: |
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隨著有機導電性高分子材料的電子元件迅速發展,有機材料應用在光電產品也越來越廣,原因在於有機材料可以有製程簡單、製作成本低、更輕、更薄,尤其是可以撓曲(flexible)的特性。近年研發快速的OLEDs/OLED display進入日常生活中的商品、乃至於軟性電子元件(e-paper, e-book)、ORFID的設計都是運用了有機材料的優勢,以符合日新月異的電子商品演變。而有機場效電晶體(有機薄膜電晶體)是產品設計的關鍵所在,和目前主流的金屬氧化物半導體電晶體最大不同處,在於採用有機半導體材料取代無機矽與其氧化物半導體材料。
目前在有機場效電晶體裡,大多是電洞為主的元件(P型),因為電子易受環境水氧等因素影響,在N型方面發展速度相當有限。本論文主要是探討不同介電層對Pentacene (五環素)元件的電性影響,並且配合原子力顯微鏡(AFM) 與X射線繞射(XRD)量測,觀察Pentacene結晶成長情形。而在本實驗中也發現Pentacene也是有N型產生,其電子移動率(Mobility)約是0.03 cm2V-1s-1,On/Off ratio約 10^4。
Based on the earlier research, in the present study, the gate dielectric is an important criterion in the fabrication of organic field-effect transistors (OFETs). We have fabricated pentacene organic field-effect transistors with spin-coated polymer gate dielectric layers. Most of the report about pentacene are usually using in the P-type organic field-effect transistors. In our work, incorporating a poly(vinyl alcohol) polymer interfacial film and another cross-linked poly(4-vinyl phenol) layer as a double-layer gate dielectric causes the pentacene-based OFETs to exhibit effective n-channel conduction of a saturated, apparent pinch-off drain-source current with the electron mobility of 0.03 cm2V-1s-1.
[1] C. K. Chiang, C. R. Fincher, Y. W. Park, A. J. Hegger, H. Shirakawa, E. J. Louis, S. C. Gua and A. G. MacDiarmid, Phys. Rev. Lett., 39, 1098 (1977)
[2] A. Tsumura, H. Koezuka and T. Ando, Appl .Phys, Lett. , 49 ,1210 (1986)
[3] C. D. Dimitrakopoulos, D. J. Mascaro, “Organic thin-film transistors: a review of recent advances”, IBM J. Res. Dev 45, 11-27, (2001)
[4] Henning Sirringhaus, Adv. Mater. 2005, 17, 2411–2425
[5] GERWIN H. GELINCK,et al., Nature 2000, 407, 442.
[6] C. D. Dimitrakopoulos, P. R. L. Malenfant Adv. Mater. 2002, 14, No. 2, January 16
[7] Antonio Facchetti,/Semiconductors for organic transistors/ Materials Today, Volume 10, Issue 3, March 2007, Pages 28-37
[8] Katz, H. E.; Bao, Z.; Gilat, S. L. Acc, Chem. Res. 2001, 34, 359-369.
[9] Horowitz, G.; peng, X.; Fichou, D.; Ganrnier, F. Synth. Met. 1992, 51,419.
[10] J.H. Schon et al. Organic Electronics 1 (2000) 57-64
[11] Constance Rost, David J. Gundlach,Siegfried Karg, and Walter Rie, J. Appl. Phys., Vol. 95, No. 10, 15 May 2004
[12] M. Ahles, R. Schmechel, and H. von Seggern, Appl. Phys. Lett.
85, 4499 (2004)
[13] Niels Benson,Martin Schidleja, Christian Melzer, Roland
Schmechel, and Heinz von Seggern, Appl.Phys.Lett.89,
182105 (2006)
[14] Th. B. Singh, F. Meghdadi, S. Gnes, N. Marjanović, G. Horowitz, P. Lang, S. Bauer, and N. S. Sariciftci, Adv. Mater. 17, 2315 (2005).
[15] Th. B. Singh, P. Senkarabacak, N. S. Sariciftci, A. Tanda, C. Lackner, R. Hagelauer, and G. Horowitz, Appl. Phys. Lett. 89, 033512 (2006).
[16] Marcus Ahles,Roland Schmechel,and Heinz von Seggern, Appl. Phys. Lett. 87, 113505 (2005)
[17] Alejandro L.Briseno,et al.,Appl.Phys.Lett.89,222111 (2006)
[18] C. W. Tang, S. A. VanSlyke, Appl. Phys. Lett., 51, 913 (1987)
[19] R. Brown,C.P.Tarrett,D.M.de Leeuw and M.Matters,Synth.
Met.,88, pp.37-55,(1997)
[20] P. G. Le Comber and W. E. Spear, Phys. Rev. Lett., 25,pp.
509-511,(1970)
[21] G. Horowitz and P. Delannoy, J. Appl. Phys.,70, pp.469-475,(1991)
[22] G. Horowitz, R. Hajlaoui and P. Delannoy, J.Phys. III, 5, pp.355-371, (1995)
[23] M.C.J.M. Vissenberg and M. Matters,Phys. Rev. B, 57,
pp.12964-12967,(1998)
[24] S. M. Sze, Physics of Semiconductor Devices (Wiley, New
York, 1981).
[25] M. Pope and C. E. Swenberg, “Electronic Processes in
Organic Crystals and Polymers”, 2nd Edition, Oxford
University Press, New York, 1999, pp. 337-340.
[26] S. F. Nelson, Y. Y. Lin, D. J. Gundlach, and T. N. Jackson, Appl. Phys. Lett. 72, 1854 (1998).
[27] Gilles Horowitz,Advanced Materials,10,pp.365-377, (1998)
[28] N. Karl, J. Marktanner, R. Stehle, and W. Warta,Synth. Met., 41-43, 2473 (1991)
[29] I. Yagi, K. Tsukagoshi, and Y. Aoyagi, Appl. Phys. Lett. 84, 813 (2004)
[30] H. Klauk, G. Schmid, G. Radlik, W. Weber, L. Zhou, C. D. Sheraw, J. A. Nicols, and T. N. Jacson, Solid-State Electron. 47, 297 (2003)
[31] A.R. Brown, C.P. Jarrett, D.M. de Leeuw, M. Matters, Synthetic Metals 88 (1997) 37-55
[32] Gilles Horowitz, J. Mater. Res., Vol. 19, No. 7, Jul 2004
[33] Christopher R. , et al., Chem. Mater., Vol. 16, No. 23, 2004
[34] Christie M.Hassan, Nikolaos A.Peppas,Advances in Polymer Science, Vol. 153
[35] A.R. Brown, A. Pomp, C.M. Hart, D.M. Deleeuw, Science 1995, 270,972. A.R. Brown, A. Pomp, D.M. de Leeuw, D.B.M. Klaassen, E.E. Havinga, P. Herwig, KMllen,J.Appl.Phys.1996,79,2136.
[36] L.–L.Chua, J.Zaumseil, J.–F.Chang, E. C.–W. Ou, P. K.–H. Ho, H. Sirringhaus, and R. H. Friend, Nature 434, 194 (2005).
[37] Fang-Chung Chen, Chih-Wei Chu, Jun He, and Yang Yang, Appl.Phys. Lett. 85, 3295 (2004).
[38] S. Young Park, Mikyung Park, and Hong H. Lee, Appl. Phys. Lett., Vol. 85, No. 12, 20 September 2004
[39] D. K. Hwang, Kimoon Lee, Jae Hoon Kim, and Seongil ImAppl. Phys. Lett. 88, 243513 (2006)
[40] Do Kyung Hwang, Chang Su Kim, Jeong Min Choi,et al. Adv. Mater. 2006, 18, 2299–2303
[41] Jun Yeob Lee,Jang Hyuk Kwon,Appl.Phys.Lett.88,
183502 (2006)
[42] R. C. Haddon, A. S. Perel, R. C. Morris, T. T. M. Palstra, A.F.Hebard, R.M.Fleming, Appl. Phys. Lett.67(1),3 July 1995
[43] Chang Su Kim, Sung Jin Jo, Sung Won Lee, Woo Jin Kim, Hong Koo Baik,* and Se Jong Lee Adv. Funct. Mater. 0000, 00, 1–6
[44] S. Steudel, S. D. Vusser, S. D. Jonge, D. Janssen, S. Verlaak, J. Genoe,P. Heremans, Appl. Phys. Lett. 2004, 85, 4400.
[45] S. E. Fritz, T. W. Kelley, C. D. Frisbie, J. Phys. Chem. B 2005, 109,10 574.
[46] A. D. Carlo, F. Piacenza, A. Bolognesi, B. Stadlober, H. Maresch,Appl. Phys. Lett. 2005, 86, 263 501.
[47] C. D. Dimitrakopoulos, A. R. Brown, and A. Pomp J. Appl. Phys. 80 (4), 15 August 1996
[48] Max Shtein, Jonathan Mapel, Jay B. Benziger, and Stephen R. Forrest, Appl. Phys. Lett., Vol. 81, No. 2, 8 July 2002
[49] Frank-J. Meyer zu Heringdorf, M. C. Reuter & R. M. Tromp
NATURE |VOL 412 | 2 AUGUST 2001 |
[50] Megumi Kasaya, Hitoshi Tabata, Tomoji Kawai, Surface Science 342 (1995) 215-223
[51] Frank-J. Meyer zu Heringdorf, M. C. Reuter & R. M. Tromp, NATURE | VOL 412 | 2 AUGUST 2001
[52] Max Shtein, Jonathan Mapel, Jay B. Benziger, and Stephen R. Forrest, Appl. Phys. Lett., Vol. 81, No. 2, 8 July 2002
[53] M. S. Kim, et al. Journal of the Korean Physical Society, Vol. 43, No. 5, November 2003
[54] Janos Veres, Simon Ogier, and Giles Lloyd, Chem. Mater., Vol. 16, No. 23, 2004
[55] Liping Ma and Yang Yang, Appl. Phys. Lett., Vol. 85, No. 21, 22 November (2004)
[56] G. Nunes, Jr.,S. G. Zane, and J. S. Meth, J. Appl. Phys. 98, 104503 (2005)