本研究首先探討銦摻雜硫化鋅的製備，利用化學氣相沉積法(Chemical Vapor Deposition)成長出具有片狀及線帶狀的表面形貌，主要成長變數有兩種一為通入氣體之時機，另一個為前驅物粉末之比例。主要影響因素在高溫或低溫下為金屬觸媒聚集程度的不同造成以不同的成長機制形成不同性質的銦摻雜硫化鋅，利用掃描式電子顯微鏡(Scanning Electron Microscopy, SEM)及能量分散光譜儀(Energy Dispersive Spectrometer, EDX)觀察不同銦含量的片狀及線帶狀銦摻雜硫化鋅的表面形貌，並由X光繞射儀(X-Ray Diffraction, XRD)分析片狀形貌具有高溫相Wurtzire及線帶狀形貌具有主要為低溫相Zinc Blend，並且藉由(High Resolution Transmission Electron Microscope, HRTEM)分析片狀及線帶狀成長方向，最後進行光學分析，利用X光光電子能譜儀(X-ray Photoelectron Spectroscopy, XPS)再次確認銦摻雜硫化鋅成分及銦-鋅鍵結、鋅-硫鍵結，藉由μ-Raman可知晶格壓縮率會隨著銦摻雜的增加而增加，造成LO peak藍移現象，對片狀及線帶狀而言此關係會成一比例，藉由μ-PL可知銦摻雜相關之缺陷造成的波峰隨著銦含量的增加而增加，產生紅移的現象，並且分析材料內部缺陷具有本質缺陷及異質缺陷，並在照光時產生兩種機制之途徑貢獻至光電流，由於本質缺陷濃度較缺陷濃度低，故綠光照射下之電流響應值為最低，異質缺陷還可分成與銦摻雜相關的三個缺陷，分別為〖In〗_(r,585nm)^ 、〖In〗_(r,615nm)^ 及〖In〗_(r,660nm)^ ，藉由次波峰之強度及半高寬，可知缺陷濃度由高至低為〖In〗_(r,615nm)^ 、〖In〗_(r,660nm)^ 及〖In〗_(r,585nm)^ ，故光響應值高至低依序為橘光、紅光及綠光照射。

This study investigates growth and visible Light Photodetection of Indium doped ZnS synthesized by Chemical Vapor Deposition method under different timing of carry gas flow and different precursor ratio. Scanning electron microscopy images two type of indium doped Zinc Sulfide which morphology is sheet and wire/belt like at high/low temperature growth. Micro-Photoluminescence spectrum shows two type of defect which is intrinsic and extrinsic related to different response. The lowest response related to intrinsic elemental sulfur species on the surface. The highest response related to extrinsic primary indium related defect.

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