本實驗使用直流反應式磁控濺鍍系統在100到200 W鈦靶功率以及3~15%氧氣流率(FO2% = FO2 / (FO2+FAr) × 100%)下將氧化鈦(TiOx)薄膜沉積於矽(100)基板上，並且在快速退火爐(RTA)中進行350~750 °C兩分鐘的大氣退火。
結果分析方面，分別使用掃描式電子顯微鏡(SEM)、能量散光譜儀(EDS)、低掠角X光繞射儀(GIXRD)、拉曼光譜(Raman)、以及光激發螢光光譜(photoluminescence, PL)對初鍍膜以及退火後之TiOx薄膜的表面形貌、化學組成、材料結構、鍵結行為、以及發光行為進行分析研究。
由GIXRD圖以及拉曼光譜顯示出的微弱訊號可得知，所有初沉積的TiOx薄膜在退火前皆為非晶結構。相較之下，在經過550~750 °C RTA退火後，在GIXRD圖以及拉曼光譜中則出現明顯的Anatase與Rutile結晶相的波峰訊號。當退火前的TiOx薄膜的化學計量值x介於1.57到1.97之間時，在經過750 °C RTA退火後可以發現到Anatase與Rutile的混合相，而x大於1.97與x小於1.57的試片退火後則分別出現純Anatase相與純Rutile相。
退火過後的TiOx薄膜在PL光譜中顯示出極寬的波峰訊號，位置落在可見光的區域範圍內，使用100 W鈦靶功率及3 FO2%濺鍍而成的TiOx薄膜在750 °C退火後的PL波峰訊號可被擬合成兩個高斯波峰，位置在~486 nm (2.55 eV)以及~588 nm (2.11 eV)，這兩個波峰訊號分別來自Rutile 及Anatase相的氧缺陷所造成的深層發光，純Anatase相的PL光譜的波峰訊號則是在550 nm附近。此外，PL的訊號強度將與不同氧氣流率及退火溫度下造成的Rutile 及Anatase相變化有關。

Titanium oxide (TiOx) thin films were deposited on the Si(100) substrates by direct-current reactive magnetron sputtering at 100~200 W Ti-target power and 3~15 % oxygen flow ratios (FO2% = FO2 / (FO2+FAr) × 100%), and then annealed by rapid thermal annealing (RTA) at 350~750 °C for 2 min in atmosphere.
The morphology, chemical composition, structure, bonding and luminescence behaviors of the as-deposited and annealed TiOx thin films were analyzed by scanning electron microscopy (SEM), energy dispersive spectrometry (EDS), grazing incidence X-ray diffraction (GIXRD), Raman spectroscopy and photoluminescence (PL) spectroscopy, respectively.
The as-deposited TiOx films were amorphous from GIXRD and showed weak Raman intensity. In contrast, the distinct crystalline peaks of anatase or rutile phases were detected after RTA at 550~750 °C from both GIXRD and Raman spectra. A mixture of anatase and rutile phases was obtained by RTA at 750 °C when the stoichiometry x of as-deposited TiOx films is between 1.57 and 1.97. The pure anatase and pure rutile phase were detected in x>1.97 and x<1.57 specimens after RTA, respectively.
The PL spectra of all post-annealed TiOx films showed a broad peak in visible light region. The PL peak of TiOx film at 100 W Ti-target power and 3 FO2% at 750 °C annealing can be fitted into two Gaussian peaks at ~486 nm (2.55 eV) and ~588 nm (2.11 eV) which were attributed to deep-level emissions of oxygen vacancies in the rutile and anatase phases, respectively. The peak around 550 nm was observed at pure anatase phase. The variation of intensity of PL peaks is concerned with the formation of rutile and anatase phases at different FO2% and annealing temperatures.

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