本論文描述於N(100)矽基板上調變不同蝕刻參數形成不同孔隙率的多孔矽基板。利用多孔矽結構增加光線吸收面積與偏移吸收峰值，來發展高性能紅外線光感測元件。其中多孔矽層是以電化學陽極化蝕刻法(Electrochemical Anodization Method)製作而成。然後於其上再以快速升溫化學氣相沉積系統(RTCVD)成長矽鍺及矽鍺碳薄膜。並利用FE-SEM、AFM觀察量測薄膜表面狀態，使用FTIR、Raman spectra、XRD等儀器分析薄膜的結晶品質。
利用矽／矽鍺／多孔矽及矽／矽鍺碳／多孔矽結構製作的紅外線光感測元件其主要吸收層在矽鍺、矽鍺碳及多孔矽層，吾人量測元件在未照光與照光下的I-V特性、光暗電流比等。當矽／矽鍺／多孔矽元件之孔隙率為55%時，在-12V偏壓下，以波長700nm、5mW之雷射光照射下得到最大光暗電流比為2.13×105；同樣條件下，矽／矽鍺碳／多孔矽元件的最大光/暗電流比為1.75×106是矽／矽鍺／多孔矽元件的8.23倍。相較已發表的成長於單晶矽基板上的非晶矽鍺紅外線感測元件，光電流有著近10倍的提升[38]，也就是說成長於多孔矽基板上的矽／矽鍺碳／多孔矽元件，具有較佳的光感測特性與靈敏度，因此也更適合應用於紅外線光感測。

In this thesis, we used various etching conditions to prepare porous-Si (PS) layers on N-type (100) silicon substrate. The layer with a porous structure can increase photo-absorbing area, and shift the peak of absorbing wavelength, thus improving the flexibility for designing a high performance photo-detecting device. The PS layers were formed on silicon substrates using an electrochemical anodization etching method. To develop Si/SiGe/PS and Si/SiGeC/PS infrared detecting devices, the SiGe、SiGeC films were deposited on the top of the PS layer by a RTCVD system firstly. Then the physical and electrical characteristics of the films were investigated by FE-SEM, AFM, FTIR, Raman spectrum, XRD, and to optimize the depositing parameters.
We measured I-V characteristics and calculated the photo to dark current ratio of the devices with and without the illumination of an infrared light (IR) source with λ=700nm. The Si/SiGe/PS device with porosity 55%, at -12V bias, and under 5mW laser diode illuminated, the maximum photo to dark current ratio is 2.13×105. In contrast, under the same conditions, its counterpart the Si/SiGeC/PS device with porosity 55% has the maximum photo to dark current ratio of 1.75×106, which is 8.23 times higher than that the Si/SiGe/PS device. It is worthy to note, the photo current increases nearly 10 times, which is better than that reported amorphous silicon germanium infrared sensors on crystalline silicon substrates[38], thus evidencing the developed Si/SiGeC/PS device has better potential for IR detecting applications.

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