本實驗利用兩種不同的熱溶法來合成Cu2CdSnSe4(CCTSe)奈米晶，並探討不同的溶劑、莫耳配比、溫度、時間對合成CCTSe的影響。同時分別對CCTSe和銅摻雜CCTSe進行光學、熱電性質研究。高壓釜中加入聯胺於乙二胺溶液在溫度190℃持溫72小時，可加速形成CCTSe與銅摻雜CCTSe奈米晶。在相同條件下於無添加聯胺之乙二胺溶液中，其生成物之粉末會有CdSe，Cu2SnSe3之不純相存在。熱溶反應下聯胺具有使硫系金屬化合物產生降維度效應(dimensional reduction )，幫助形成CCTSe跟銅摻雜CCTSe奈米晶。氮氣下用油胺作為溶液，在250℃持溫72小時，可生成CCTSe與銅參雜CCTSe奈米晶。藉由紫外/可見光光譜儀量測CCTSe與銅摻雜CCTSe的能隙約1.1eV，顯示銅摻雜對CCTSe能隙並無顯著效應。

In the present study, the synthesis of Cu2CdSnSe3 (CCTSe) nanocrystals by two solvotherml processes as a function of the solvent, the molar ratio of precursors, temperature and time were explored. Meanwhile, the optical and thermoelectric properties of CCTSe and Cu-doped CCTSe nanocrystals were also studied. On synthesis in an autoclave, the addition of hydrazine to the ethylenediamine solvent speeded up the formation of pure CCTSe and Cu-doped CCTSe nanocrystals at 190˚C for 72 h. Without addition of hydrazine, some impurity phases such as CdSe and Cu2SnSe3 still remained in the synthesized powders after growth at 190˚C for 72 h. The dimensional reduction of metal chalcogenides in the solvothermal reaction by hydrazine enhanced the growth of the CCTSe and Cu-doped CCTSe nanocrystals. On synthesis in the oleylamine solvent in N2 at 250˚C for 72 h, pure CCTSe and Cu-doped CCTSe nanocrystals could be acquired. The bandgaps of CCTSe and Cu-doped CCTSe nanocrystals were determined to be about 1.1 eV by UV-vis spectroscopy, revealing that the Cu doping had no significant effect on the bandgap of the CCTSe crystals.

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