當半導體製程技術持續發展，人們為了實現摩爾定律的預測而逐漸遇到困難，許多因應後摩爾時代的技術被研究、開發，擁有高載子遷移率的鍺就是其中一個替代矽的候選。然而鍺與閘極氧化層之間不佳的介面品質是一個需要突破的困難。
本論文研究以氮基鈍化處理的方式，來改善鍺與高介電常數氧化層之間的介面問題。我分別以氨電漿和聯氨來進行沉積氧化層的鈍化，並且比較這兩種製程的效果，做出超低等效氧化層厚度的金氧半結構。

When the semiconductor fabrication technology is developing, People feel difficulty following the Moore’s Law. Thus, several solutions to the post-Moore era are studied, and germanium is one of the candidates to take place of silicon. However, the poor quality of germanium and its gate oxide is a bottleneck to be overcome.
In this thesis, I used the surface passivation by nitrogen-based treatments to improve the surface quality between germanium and high-k materials. This research compared the effects of passivation treatments by ammonia plasma and hydrazine respectively, making a ultra-low EOT germanium MOS structure.

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