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研究生: 陳宥均
Chen, Yu-Chun
論文名稱: 化學氣相沉積石墨烯與非晶相碳於銅薄膜及基於表面增強拉曼散射之感測器應用
Chemical Vapor Deposition of Graphene and Amorphous Carbon on Copper Thin Films and Sensor Applications Based on Surface Enhanced Raman Scattering
指導教授: 曾永華
Tzeng, Yon-Hua
學位類別: 碩士
Master
系所名稱: 電機資訊學院 - 微電子工程研究所
Institute of Microelectronics
論文出版年: 2016
畢業學年度: 104
語文別: 中文
論文頁數: 123
中文關鍵詞: 石墨烯表面增強拉曼散射羅丹明
外文關鍵詞: Graphene, SERS, R6G, Copper
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  • 石墨烯擁有許多優異的特性,如:極高的電子遷移率、優良的導電性、導熱性,尤其是石墨烯為單層碳原子厚度的二維材料,對於環境的敏感度非常的高,且具備可撓性,這將是接下來穿戴式裝置、可撓式透明導電材料、觸控螢幕所需要的特點,石墨烯擁有極大的發展潛力及應用層面,也是許多研究團隊熱中的研究發展熱門材料。
    表面增強拉曼散射(Surface Enhanced Raman Scattering, SERS)是一個高靈敏度的微量分子濃度偵測技術,表面增強拉曼散射基板的材料主要是用金(Au)、銀(Ag)與銅(Cu),而利用銅(Cu)來製作基板的成本比金(Au)與銀(Ag)還要低,但銅(Cu)的缺點為容易在空氣中被氧化,所以,在本實驗中我們製備出同時具備可撓性、與環境穩定性高、不易氧化、表面有一層碳薄膜覆蓋的奈米結構銅基板,用來作為量測表面增強拉曼散射的基板,我們利用微波電漿化學氣相沉積法(MPCVD)與熱化學氣相沉積法(Thermal CVD)來製備碳薄膜覆蓋的奈米結構銅基板,在高溫製程中通入甲烷氣體,使得在銅的表面成長一層碳薄膜,可保護底下的銅基板不會被氧化,過程中碳薄膜也會成長在銅與二氧化矽之間的交界面,並使得銅上下表面有奈米級的粗糙度,且在製備後容易將銅膜從基板上撕起,銅膜的厚度約只有1000nm,可用來作為可撓式的基板,並利用羅丹明(Rhodamine 6G, R6G)作為量測表面增強拉曼散射的染劑,當我們利用此有碳薄膜覆蓋的奈米級結構、可撓式銅基板,利用濃度約10-5 M的羅丹明(Rhodamine 6G, R6G)稀釋溶液,將可量測出其拉曼增強因子(Enhancement factor)達到104倍以上。

    We report roughened Cu thin films encapsulated by graphene, amorphous and hybrid nanocarbon films as effective and durable surface enhance Raman scattering (SERS) substrates. Thermal chemical vapor deposition (CVD) has been applied to synthesize amorphous carbon, graphene and their hybrids at substrate temperatures between 300℃ and 1000℃ on Cu films RF magnetron sputtered on oxidized silicon substrates with or without additional aluminum oxide coatings. The CVD process at elevated temperatures simultaneously encapsulates a Cu film with nanocarbon films and roughens it to enable effective plasmonic coupling on the surface of the micro- and nano-structured Cu film. SERS enhancement factor higher than 104 for 10-5 M rhodamine 6G (R6G) molecules in water has been demonstrated. Both oxidized silicon substrates with and without aluminum oxide coatings exhibit similar SERS effects. Surface morphologies of Cu films after CVD processing at around 600℃ results in the best SERS enhancement. Thicker Cu films up to 1500nm results in better SERS enhancement than thinner ones. Durability of the nanocarbon encapsulated, Cu film based SERS substrates has been demonstrated by heating in the ambient air up to 200℃ and exposure to acidic and basic chemicals. Amorphous carbon encapsulation synthesized above 600℃withstands oxidation in ambient air well but is vulnerable to chemical etching by acidic and basic solutions. Graphene-like nanocarbon encapsulation synthesized at 1000℃ is withstands both oxidation in the ambient air and chemical etching.

    中文摘要 I 英文摘要 II 誌謝 XXIV 目錄 XXV 表目錄 XXVIII 圖目錄 XXVIII 第一章緒論 1 1-1石墨烯介紹 1 1-2表面增強拉曼散射 3 第二章文獻回顧 4 2-1石墨烯的製備方式與大面積成長 4 2-1-1機械式剝離法(Mechanical exfoliation) 4 2-1-2氧化還原法(Oxidation and Reduction) 5 2-1-3電漿輔助化學氣相沉積法(Plasma enhanced chemical vapor deposition, PECVD) 7 2-1-4熱化學氣相沉積法(Thermal chemical vapor deposition, Thermal CVD) 7 2-1-5石墨烯在銅上的成長機制 10 2-1-6石墨烯的大面積成長 12 2-2石墨烯的轉移方式 19 2-2-1使用PDMS轉移方式 20 2-2-2使用PMMA轉移方式 21 2-2-3使用roll-to-roll轉移方式 25 2-2-4使用H2氣泡轉移方式 26 2-2-5使用靜電轉移方式 28 2-3直接製備石墨烯於所需目標基板上(transfer-free graphene) 29 2-4石墨烯的檢測方式 37 2-4-1光學顯微鏡 (Optical microscope, OM) 37 2-4-2原子力學顯微鏡 (Atomic force microscope, AFM) 40 2-4-3掃描式電子顯微鏡 (Scanning electron microscopy, SEM) 41 2-4-4穿隧式電子顯微鏡(Transmission electron microscopy, TEM) 42 2-4-5拉曼光譜儀(Raman spectrroscopy) 43 2-5表面增強拉曼散射(Surface Enhanced Raman Scattering, SERS) 47 第三章實驗儀器與介紹 56 3-1製程設備 56 3-1-1熱化學氣相沉積系統(Thermal CVD) 56 3-1-2射頻磁控電漿濺鍍系統(RF magnetron Sputtering system) 60 3-1-3微波電漿化學氣相沉積系統(Microwave plasma enhanced CVD, MPECVD) 61 3-2分析與量測儀器 63 3-2-1光學顯微鏡(Optical microscope, OM) 63 3-2-2掃描式電子顯微鏡 (Scanning electron microscopy, SEM) 63 3-2-3原子力學顯微鏡 (Atomic force microscope, AFM) 65 3-2-4拉曼光譜儀(Raman spectrroscopy) 66 第四章實驗分析與結果討論 67 4-1 製備方法--利用微波電漿化學氣相沉積法(MPCVD)製備SERS基板 68 4-2 量測結果--微波電漿化學氣相沉積法(MPCVD)製備的SERS基板 71 4-2-1奈米碳薄膜覆蓋的銅基板表面形貌與其SERS拉曼光譜圖 71 4-2-2奈米碳薄膜的特徵與分析 80 4-2-3奈米碳薄膜覆蓋的銅基板的抗氧化測試 81 4-3製備方法--利用熱化學氣相沉積法(Thermal CVD)製備SERS基板 83 4-4量測結果--熱化學氣相沉積法(Thermal CVD)製備的SERS基板 86 4-4-1奈米碳薄膜覆蓋的銅基板表面形貌與其SERS拉曼光譜圖 86 4-4-2 SERS拉曼增強因子(Enhancement Factor) 94 4-4-3熱化學氣相沉積奈米碳薄膜的特徵與分析 94 4-4-4奈米碳薄膜覆蓋的銅基板的抗氧化測試 96 4-4-5銅薄膜厚度的影響 97 4-4-6製程溫度的影響 100 4-4-7高溫製備石墨烯奈米碳薄膜覆蓋的銅基板 102 4-4-8高溫製備石墨烯奈米碳薄膜的特徵與分析 106 4-4-9石墨烯奈米碳薄膜的抗氧化測試 108 4-4-10長時間抗氧化測試與比較 109 4-4-11奈米碳薄膜覆蓋的銅基板酸性溶液測試 111 4-4-12 620℃製備奈米碳薄膜覆蓋的銅基板與1030℃製備高品質石墨烯的銅箔,兩者SERS效果的比較 114 第五章結論與未來展望 116 參考文獻 118

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