在本論文中，我們利用固體源分子束磊晶法(SSMBE)設計正型矽鍺雙通道摻雜場效電晶體新異結構，並以二次離子質譜儀進行薄膜品質與摻雜輪廓分析，所開發之元件將與單通道摻雜場效電晶體進行電性比較分析，期進而歸納此結構之最佳設計準則。

　　在實驗方面，這兩種矽鍺通道摻雜異質結構場效電晶體皆已成功研製。其中矽鍺雙通道摻雜場效電晶體在元件的特性表現上猶為出色，乃因雙通道結構價電帶改變，使得載子更能有效侷限在矽鍺雙通道中，因此能改善元件的特性。其最高汲極電流為18 mA/mm，而最高互導值可達7.69 mS/mm，並且擁有較大的電導半高寬值。

　In this thesis, results comparing SiGe p-channel MESFET performance of single- and double-doped channel devices, which grown by solid-source molecular beam epitaxy (SSMBE) are presented. Secondary ion mass spectrum (SIMS) was used to confirm the Ge and boron profile in Si1-xGex channel.

　As expected, double-doped channel devices exhibit improved electrical characteristics in this experiment due to the good carrier confinement. It is found that double-doped channels FETs exhibit the better properties not only in current density (18 mA/mm) but also in extrinsic transconductance (7.69 mS/mm). Besides, it has linear operation over a wider dynamic range.

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