| 研究生: |
陳翠亭 Chen, Tsui-Ting |
|---|---|
| 論文名稱: |
主鏈含電子傳遞Tiophene衍生物之共聚芴的合成與光電性質 Synthesis and Optoelectronic Properties of Copolyfluorenes Doped with Electron-Transporting Thiophene Derivative |
| 指導教授: |
陳雲
Chen, Yun |
| 學位類別: |
碩士 Master |
| 系所名稱: |
工學院 - 化學工程學系 Department of Chemical Engineering |
| 論文出版年: | 2009 |
| 畢業學年度: | 97 |
| 語文別: | 中文 |
| 論文頁數: | 112 |
| 中文關鍵詞: | 共軛導電高分子 、共聚芴 |
| 外文關鍵詞: | Conjugated polymer, Copolyfluorene |
| 相關次數: | 點閱:67 下載:1 |
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以共軛高分子為主的高分子發光二極體(Polymer Light Emitting Diode, PLED) 已經被科學家廣泛的研究,藉由從陽極、陰極注入的電洞及電子在發光層中再結合,進而發出不同的光色,因此電荷的注入及傳遞速率之平衡對發光效率有非常大之影響。聚芴為良好電洞傳遞材料,然而對電子、電洞傳送速率不平衡,導致元件發光效率不高。
本研究利用Suzuki聚合反應合成一系列主鏈含電子傳遞性噻吩(thiophene)衍生物(GM)之聚芴高分子作為黃綠光發光材料。探討隨著GM的含量不同,對高分子的熱性質、光學性質、電化學性質、成膜表面性質與元件效能有何差異。這些高分子可溶於一般有機溶劑,如甲苯、氯仿等,並且具有大於410°C的熱裂解溫度(Td)及大於94℃玻璃轉移溫度(Tg)。光學性質方面,PF~P5薄膜態的最大UV/Vis 吸收在385 nm;薄膜態螢光光譜(PL)上出現兩個發光峰(425 nm、535 nm),隨著主鏈中GM含量提高,能量轉移由芴單元到GM單元的程度就越大。在電化學性質方面,利用氧化和還原起始電位分別求出GM及高分子HOMO和LUMO能階,GM擁有較小的能階而在高分子鏈中變成載子捕捉中心。PF~P5高分子膜的表面粗糙度隨著主鏈中GM含量減少逐漸下降,約1.24~1.83 nm。元件方面探討GM含量對元件效能有何差異,元件結構為[ITO/PEDOT:PSS/polymer/Ca(50nm)/Al(100nm)]。PF~P5雙層元件大亮度分別為1310 cd/m2、5230 cd/m2、3530 cd/m2、2610 cd/m2、2000 cd/m2,,最大電流效率分別為 0.18 cd/A、0.65 cd/A、0.43 cd/A、0.44 cd/A、0.48 cd/A,且元件發光顏色隨著共聚比例不同而改變,隨著共聚比例增加,C.I.E.色度座標由(0.17, 0.15)位移至(0.35,0.52)。此外將P5以不同比例 (w/w = 5/1、10/1、15/1 ) 掺混至PF製作成雙層元件,最大亮度分別為 2730 cd/m2、1730 cd/m2、1300 cd/m2,電流效率(cd/A)分別為 0.49 cd/A、0.36 cd/A、0.27 cd/A,其中PF/P5(w/w = 10/1)的光色(0.26, 0.32)最接近白光(0.33, 0.33)。
A series of copolyfluorenes doped with electron-transporting thiophene derivative, 2,5-bis(2-phenyl-2-cyanovinyl)thiophene (GM) were synthesized by the Suzuki coupling reaction. They were characterized by GPC, 1H NMR, elemental analysis, DSC, TGA, optical spectra, cyclic voltammetry, and AFM. Imbalance in carriers injection and charge mobility in polyfluorene leads to low efficiency in its polymeric light-emitting diodes (PLEDs). In order to achieve balanced charges injection, copolyfluorenes containing electron transporting unit (GM) (0.5~5 mole%) in backbone were synthesized and their opotoelectronic characteristic investigated. They exhibited good thermal stability (Td > 410℃) and glass transition temperatures (Tg > 94℃). In film state, the photoluminescence (PL) peaks were situated at 425 nm and 535 nm , which were attributed to fluorene and GM segment, respectively. The peak intensity at 535 nm increased with an increase in chromophore (GM) content. In addition, the GM unit act as charge trapping site because of its smaller band gap (2.21 eV), and it's indicated that charge trapping is another emission mechanism in EL process. The surface roughness of the coployfluorene films increased from 1.24 nm to 1.83 nm when the content of GM units were increased. Electroluminescent devices, ITO/PEDOT:PSS/polymer/Ca(50 nm)/Al(100 nm), were fabricated to investigate the influence of GM contents on emission characteristics. The maximum brightness and current efficiency of the P05 device (5230 cd/m2, 0.65 cd/A) transcended those of the PF device (1310 cd/m2, 0.18 cd/A). Furthermore, blend of PF and P5 (w/w = 5/1, 10/1, and 15/1)were used as emission layer for device fabrication. The EL emission of blend device with PF/P5 = 10/1 exhibited white electroluminescence with CIE coordinate being (0.26, 0.32), which appears to be near-white to the naked eye.
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