近年來，具有高轉換效率與高輻射阻抗特性之三五族化合物太陽能電池被廣泛地研究且被應用於地面太陽能發電廠。三五族化合物太陽能電池之優良元件特性是源自於磊晶成長與電流匹配之串疊結構。然而，在三五族化合物太陽能電池製程普遍存在選擇性蝕刻製程，此製程造成高表面態密度與高表面複合速率，因此載子被外部電路汲取能力受到阻礙。在本論文中，光電化學氧化法被使用於窗口層以鈍化懸浮鍵與降低表面態密度。砷化鎵太陽能電池經由光電化學氧化處理之轉換效率改善約3.68%。此外，設計具有較大入射光量之電極結構對於增強三五族化合物太陽能電池之轉換效率也是相當重要的議題。由於透明銦錫氧化物薄膜具有良好的導電性與高穿透特性因此相當適合作為光電元件之電極，但是透明銦錫氧化物與三五族化合物太陽能電池元件卻難以形成良好之歐姆接觸。本論文提出利用薄金屬(金鍺鎳/金)轉換層搭配硫化處理作為中間物質以改善銦錫氧化物與磷化鋁銦層之特徵接觸電阻，根據傳輸線模型方法得知其特徵接觸電阻可達6.83 x 10^-6 ohm-cm^2。另外，本論文也提出由銦錫氧化物薄膜與金屬接觸墊所組成之混合式電極結構取代傳統金屬電極。此兩種設計的電極結構具有較少的金屬覆蓋面積能減少遮蔽損失，並且能解決高歐姆接觸電阻問題。相較於傳統金屬電極，此兩種設計電極結構所增加的入射光量皆大於7%，因此磷化銦鎵/砷化銦鎵/鍺三接面太陽能電池之轉換效率被明顯改善。根據實驗結果，表面鈍化方法與設計之電極結構均可有效改善三五族化合物太陽能電池之轉換效率。

Recently, the III-V compound solar cells with the high conversion efficiency and high radiation hardness were widely investigated and applied in the terrestrial solar power plants. The excellent device performances of III-V compound solar cells were resulted from the epitaxial growth and the current-matched tandem structure. However, a selective etching procedure was generally performed in the fabrication process of III-V compound solar cells, which induce a high surface state density and a high surface recombination rate. Therefore, the carrier extraction capability of external circuit was obstructed. In this dissertation, a photoelectrochemical (PEC) oxidation method was used on the window layer to passivate the dangling bonds and reduce the surface state density. The conversion efficiency improvement of a GaAs-based compound solar cell with PEC treatment was about 3.68%. Furthermore, the designed electrode structure with a larger incident light amount is also the important issues for enhancing the conversion efficiency of III-V compound solar cells. The transparent indium-tin-oxide (ITO) film is suitable used as the electrode of optoelectronic devices owing to its excellent electric conduction and high transmittance property. However, it is difficult to perform good ohmic contact between the transparent indium-tin-oxide (ITO) film and III-V compound solar cells. In this dissertation, a transition layer of AuGeNi/Au thin metals combined with the (NH4)2Sx treatment was used as an intermediate to improve the specific contact resistance between ITO and AlInP layer. According to the TLM method, the specific contact resistance of 6.83 x 10^-6 ohm-cm^2 could be obtained. Besides, the hybrid electrode structure combined of the metal contact pads and the ITO film was also proposed to replace the conventional metal electrode. The two designed electrode structure were used to decrease the shadow loss by the less metal cover area and circumvent the problem of high ohmic contact resistance. Comparing with the conventional metal electrode, the increased incident light amount of the two designed electrode structures were both more than 7%. Therefore, the conversion efficiency of InGaP/InGaAs/Ge triple-junction solar cells was significantly improved. According to the experimental results, the surface passivation method and the designed electrode structures could be expected as promising methods for improving the conversion efficiency of III-V compound solar cells.

Chapter 1
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[2] S. M. Hubbard, C. D. Cress, C. G. Bailey, R. P. Raffaelle, S. G. Bailey, and D. M. Wilt, “Effect of strain compensation on quantum dot enhanced GaAs solar cells,” Appl. Phys. Lett., vol. 92, pp. 123512-1123512-3, 2008.
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Chapter 2
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Chapter 3
[1] K. Nakayama, K. Tanabe, and H. A. Atwater, “Plasmonic nanoparticle enhanced light absorption in GaAs solar cells,” Appl. Phys. Lett., vol. 93, pp. 121904-1121904-3, 2008.
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[3] K. Tanabe, A. F. i Morral, H. A. Atwater, D. J. Aiken, and M. W. Wanlass, “Direct-bonded GaAs/InGaAs tandem solar cell,” Appl. Phys. Lett., vol. 89, pp. 102106-1102106-3, 2006.
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Chapter 4
[1] R. R. King, D. C. Law, K. M. Edmondson, C. M. Fetzer, G. S. Kinsey, H. Yoon, R. A. Sherif, and N. H. Karam, “40% efficient metamorphic GaInP/GaInAs/Ge multijunction solar cells,” Appl. Phys. Lett., vol. 90, pp. 183516-1183516-3, 2007.
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Chapter 5
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