由於多年來的發展鈣鈦礦太陽能電池效率達到26.1%趨近於理論極限，所以為了突破理論限制發展出串接式太陽能電池，為了增加光照吸收在下電池(常見為矽)的基板會做表面處理使其為金字塔型結構(Texture)，此結構為不平整的表面。為了沉積披覆性佳的鈣鈦礦薄膜氣相溶液輔助法(Hybrid Vapor-Solution) 便被提出。
本研究著重在調控兩步法製程中蒸鍍步驟的實驗參數，包括無機層厚度與蒸鍍速率，優化鈣鈦礦薄膜品質，使整體元件表現逐步接近傳統溶液法製程。研究結果顯示，過厚的無機層會導致未完全反應之 PbI₂ 殘留，進而造成元件於 300–500 nm 波段之 IPCE 響應下降，影響光電轉換效率。由於鈣鈦礦轉換反應受到無機層厚度限制，因此本研究藉由降低無機層厚度改善轉換效率，最終成功將 300 nm 無機層轉換形成約 561 nm 之鈣鈦礦薄膜，元件效率可達 14.4%。
再進一步改善鈣鈦礦組成與薄膜品質，本研究提升 CsBr 蒸鍍速率以增加 CsBr 導入量。結果顯示，添加 CsBr 後可有效提升薄膜結晶度與晶粒尺寸，降低晶界與缺陷密度，進一步改善載子傳輸與電荷收集效率。最終元件效率由 14.4% 提升至 16.8%。透過蒸鍍參數與鈣鈦礦組成，可有效提升兩步法鈣鈦礦太陽能電池之薄膜品質與元件性能。

Perovskite solar cells have achieved efficiencies of over 26%, approaching their theoretical limit, prompting the development of tandem solar cells. To improve light absorption, textured silicon bottom cells with pyramid-like structures are commonly used, requiring conformal perovskite deposition via hybrid vapor-solution processing. This study optimized the evaporation parameters in the two-step process, including inorganic layer thickness and deposition rate, to improve perovskite film quality. Excessively thick inorganic layers caused residual PbI₂ and poor IPCE response in the 300–500 nm range due to incomplete conversion. By reducing the inorganic layer thickness, a 300 nm inorganic layer was successfully converted into a ~561 nm perovskite film, achieving a device efficiency of 14.4%. Furthermore, increasing the CsBr deposition rate improved crystallinity and grain size while reducing grain boundaries and defects, leading to enhanced carrier transport and charge collection. As a result, the device efficiency was further improved to 16.8%.

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