本論文針對氮化鋁鎵/氮化鎵系列，再搭配不同的覆蓋層，製作蕭特基二極體光偵測器，在本文中，我們選用了氧化銦錫( indium-tin-oxide，簡稱ITO )薄膜蒸鍍在我們的結構上以製作蕭特基接觸，之後再分別量測元件的蕭特基能障高度、暗電流(dark current)、照光光電流(photo current)及光響應度(responsivity)大小，以進行彼此間特性的比較。
而本實驗所使用的結構中，高溫和低溫成長40nm的氮化鋁覆蓋層，以及高溫成長10nm的氮化鋁覆蓋層，由於磊晶層間晶格常數不匹配，應力累積到一定程度後，就會釋放出來因而造成裂痕，而這對元件的特性，如漏電路徑、崩潰電壓、壽命等，將會造成無可避免的影響。為了要抑制漏電流，提高元件的性能，我們以濕氧化法( wet oxidation )的方式，在爐管中分別加熱到700℃、800℃、900℃對樣品表面進行氧化，樣品表面的裂痕會與進入管內的水蒸氣進行反應，生成一層氧化物，而此層氧化物會填補裂痕，阻礙漏電路徑，使漏電流降低。
　　文中，我們也對濕氧化法處理過的試片，進行化學分析電子光譜儀( ESCA )，分析表面的氧含量，結果顯示相較於背景氧濃度，表面氧含量確實有增多的現象。

This thesis focuses on the AlGaN/GaN series with different cap layers to fabricate Schottky diode photodetectors. In the text, we selected indium-tin-oxide film as Schottky contact to be evaporated on the structure. After measurement, Schottky barrier height、dark current、photo current and responsivity are determined separately and compared in the different structures.
However, HT- and LT- ( low-temperature-grown) AlN(40nm) cap layers as well as HT-AlN(10nm) cap layer in the experiment, crack due to the fact stress accumulates to a certain extent and bursts into cracking to release the strained energy by virtue of the mismatch of lattice constants among the epi-layers. This has a vital effect on the properties, such as leakage path、breakdown voltage、life and the like.
In order to restrain the leakage current and improve the performances, we treat out samples in the furnace at 700、800、900℃ by the use of wet oxidation. Cracks on the surface will react with ingoing H2O gas, and a layer of oxide comes to being. The oxide layer is likely to fill in cracks and blockades the leakage path, reducing the leakage current.
At last, we has indeed confirmed the increase of oxygen contained on the sample’s surface relative to background concentration in the bulk by the measurement of ESCA as well.

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