在積體電路產業中，金屬氧化物半導體場效電晶體已為主流幾十年了，當對於更快、更小的元件需求仍然很高，元件的尺存漸漸被推向物理極限，短通道效應成為重大需考慮的條件，所以金屬氧化物半導體場效電晶體由平面型進展到立體型。在此論文中探討環繞式閘極、塊材與絕緣層上矽鰭式場效電晶體，在塊材鰭式場效電晶體中，防擊穿阻擋層的概念被引進，此阻擋層用於壓制短通道效應。還有提供這三種電晶體的電性比較，而且塊材與絕緣層上矽鰭式場效電晶體這兩種元件的特性相去不遠，而且塊材晶圓還有成本較低的優勢。
反相器和反及閘皆是邏輯電路的基本組成，透過比較，使用塊材鰭式場效電晶體製造之邏輯閘的優勢在於較佳的晶圓面積利用和良好的切換速度。
因為塊材晶圓相較於絕緣層上矽晶圓有穩定、成熟的製程技術而且也有優良的特性，塊材鰭式場效電晶體仍在未來產業中占有一個很重要的地位。

The MOSFET has been the mainstream of the integrated circuit industry for decades. As the demands for faster and smaller devices are still growing, the transistors are shrinking toward the physical limitation. The short channel effect becomes dominating. The MOSFET has evolved from the planar structure to the three-dimensional structure. In this thesis, bulk FinFETs, silicon on insulator (SOI) FinFETs and gate-all-around (GAA) MOSFETs are comprehensively analyzed based on TCAD simulation. The punch-through stopper is applied for the bulk FinFET to suppress the leakage current. Benchmarks of the current-voltage characteristics and intrinsic delays are provided. We found that the bulk FinFET provides similar characteristics as SOI FinFETs, and however the bulk wafers are at lower cost than the SOI wafers.
Inverter and NAND gate are the basic elements for the logic circuits. Bulk FinFETs, SOI FinFETs and GAA MOSFETs for building these two kinds of basic logical gates are assessed using TCAD mixed-mode simulation. The bulk FinFET still has its advantage such as higher wafer area usage and faster logic gate speed.
With the stable, mature manufacturing technology and good characteristics, the bulk FinFETs will still play an important role in the future.

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