本論文主要分為兩大研究主題，第一個主題為以SiCl4/H2於熱燈絲化學氣相沉積系統中低溫成長多晶矽薄膜。第二個主題則是以SiCl4/H2於熱燈絲系統中成長氧化矽奈米線及探討氧化矽奈米線的特性。

第一部份:
在多晶矽薄膜研究部份，本研究能夠在鎢絲溫度1800℃，SiCl4進料濃度18 %，基板溫度180℃下，以約2.08 nm/s的鍍膜速度成功成長出結晶程度89%的奈米多晶矽薄膜；當基板溫度增加為210℃，鍍膜速度將可增加為2.13 nm/s，且結晶程度亦高達94%。這已比採用SiH4/H2氣體的鍍膜速度快，而且結晶程度也較高。可見Cl自由基在低溫下確實能蝕刻排列較差的矽結構並且H自由基能與表面的Si-Cl鍵反應形成活性位，使得接下來的矽先趨物能順利進行鍍膜成長。

第二部份
在氧化矽奈米線研究部份，綜合XRD、Raman、TEM、EELS和FTIR的結果証明，當固定SiCl4進料濃度14%，基板溫度低於175℃，皆可於石英玻璃或Si基板上順利成長出含有奈米晶矽的氧化矽奈米線，其奈米線直徑約80-90 nm。PL量測結果類似一白光的螢光光譜，進一步可分解為460nm、490nm和530nm三個特徵峰。經研究結果指出，其460nm特徵峰可能為奈米線內的氧空缺(O3≡Si－Si≡O3)所貢獻；530nm的特徵峰可能為奈米線內的奈米晶矽與氧化矽間的界面所貢獻；而490 nm特徵峰形成機制目前仍不清楚。

Two main research subjects are presented in this thesis. Part I is “Low temperature growth of polycrystalline silicon films using SiCl4/H2 in a HW-CVD reactor”. Part II is “Growth and characterization of SiOx nanowire using SiCl4/H2 in a HW-CVD reactor”.

Part I.
Polycrystalline silicon film with a crystalline fraction 89% and 94% have been successfully deposited at low substrate temperatures of 180℃ and 210℃, respectively. The growth rate is changed from 2.03 nm/s to 2.18 nm/s by increasing the substrate temperature from 180℃ to 210℃. The possible advantages of the process of crystalline silicon film growth using SiCl4 are suggested that Cl radicals possess a proper ability of etching weak Si-Si bonds and high [H] can abstract the surface Si-Cl bond to form surface active sites during deposition for subsequent Si species addition to surface.

Part II
Growth of SiOx nanowire at a substrate temperature 120-175℃ in a HW-CVD reactor is reported here. TEM, EELS, FTIR and XRD analyses indicate that the silicon nanocrystals were embedded in the SiOx nanowires. The PL measurement reveals that the spectrum was composed by three peaks at 460nm, 490 nm and 530 nm. The characteristics peak of 460 nm and 530 nm ascribed to neutral oxygen vacancy, ie.O3≡Si-Si≡O3 and the surface state between SiOx and Si nanocrystal, respectively. However, the factor induced the characteristic peak of 490 nm is unclear.

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