本文旨在找出熱蒸鍍PbI2在以PEDOT:PSS作為電洞傳輸層之P-i-N結構鈣鈦礦太陽能電池元件效率不佳的問題，實驗製程採用物理氣相沉積成長PbI2薄膜再進行化學氣象沉積(CVD)反應，使PbI2在充滿MAI的氣氛下低溫緩慢形成鈣鈦礦薄膜。首先我們藉由改變不同碘化鉛(PbI2)的蒸鍍速率與MAI之的反應溫度，找出形成鈣鈦礦薄膜的最佳環境，並利用XPS分析來探討熱蒸鍍PbI2與電洞傳輸層PEDOT:PSS間產生的介面問題，利用兩種不同方法來改善元件效率，方法一利用DMSO溶液處理法改善PEDOT:PSS傳輸層特性，一方面提升其導電率，一方面降低絕緣材料PSS與熱蒸鍍PbI2直接接觸的機會進而減少從熱蒸鍍PbI2 中牽引、聚集出的Pb metal以提升鈣鈦礦太陽能電池之元件特性。方法二我們利用在PEDOT:PSS上預先蒸鍍一層MAI，利用合成MAPbI3的原始材料，一方面能夠阻止PbI2與PEDOT:PSS中的PSS直接接觸，大幅提升元件特性，一方面能夠避免影響CH3NH3PbI3組成。最終形成厚度超過400nm之鈣鈦礦薄膜並成功提升太陽能電池光電轉換效率從3.8%到12.7%.

The purpose of this thesis is to find out the problem of the unideal power convert efficiency in Perovskite Solar Cell fabricated by the Physical vapor deposition (PVD) of PbI2 on the hole transport layer PEDOT:PSS then convert to MAPbI3 by Chemical vapor deposition(CVD) process. First, we change the PbI2 evaporation rate and CVD temperature to find out the best condition to form the MAPbI3 and used XPS analysis to know the interaction of PSS in PEDOT:PSS with thermal evaporation PbI2 on the interfacial and take two different method to solve the problem.The method one we used DMSO solution treat on the PEDOT:PSS to improve the conductivity ,on the other hand, reducing the opportunity of PSS directly contact to PbI2 caused Pb metal accumulated on the interface then reduce the power convert efficiency of Perovskite Solar Cell.
The second method, we use MAI as buffer layer deposit on the interface of PEDOT:PSS and PbI2 to prevent PSS directly contact PbI2.Finally,we successfully improve the power convert efficiency from 3.8% to 12.74% .

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