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研究生： 吳振豪
Wu, Chen-Hao
論文名稱： 溴化四烷基銨鹽應用於高分子發光二極體之電子注入層
Tetra-n-alkyl ammonium bromide salts as electron injection layers in polymer light emitting diode
指導教授： 溫添進
Wen, Ten-Chin
學位類別： 碩士
Master
系所名稱： 工學院 - 化學工程學系
Department of Chemical Engineering
論文出版年： 2011
畢業學年度： 99
語文別： 中文
論文頁數： 68
中文關鍵詞： 高分子發光二極體 、電子注入層 、界面偶極 、溫度
外文關鍵詞： PLED, electron injection layer
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    • 本論文探討烷鏈長度、溶劑與溫度對溴化四烷基銨鹽電子注入層的影響。內容分為三個部分，概述如下：第一部分中，應用一系列溴化四烷基銨鹽作為電子注入層，藉由調整烷鏈的長度，改變此類材料中的層狀排列間距，並應用XRD觀察、分析此類材料在共軛發光高分子上的分子排列情況。最後歸納烷鏈長度、材料的薄膜型態以及電子注入能力間之關係。
    第二部分中，以乙醇與二乙醇甲醚作為溶劑，在共軛發光高分子上旋轉塗佈溴化四辛基銨電子注入層，以AFM觀察溶劑對薄膜表面型態之影響，並以XRD分析薄膜上的分子排列與結晶性，最後歸納溶劑、薄膜型態與PLED元件效能間之關係。
    第三部分中，以溫度改變溴化四辛基銨電子注入層中的分子排列與薄膜型態，以AFM與XRD進行分析不同型態之薄膜，最後歸納出溫度、薄膜型態與元件效能間之關係。

    In this work, the tetra-n-alkyl ammonium bromide salts has been applied on electron injection layers of polymer light emitting diodes (PLEDs).
    In the first part, we fabricated the PLEDs with tetra-n-alkyl ammonium bromide salts as electron injection layer. The excellent performance of devices showed tetra-n-alkyl ammonium bromide salts with different alkyl chain length can reduce the electron injection barrier.
    In the second part, the different solvents were used for Tetraoctylammnioum bromide(TOAB) spin-coating on Green polyfluorene derivative(G-PF) in PLED. The very different morphologies of TOAB were observed. When ethanol is used as solvent for TOAB spin-coating on G-PF in PLED, the device possesses low leakage current. For TOAB spin-coating, ethanol is more suitable than 2-methoxyethanol.
    In the third part, the temperature effect of the TOAB film was reported. When the TOAB layer is heated below the melting point, it acts as an electron injection layer for high-efficiency PLED. When the TOAB layer is heated above the melting point, it acts as insulator.

    第一章 緒論 1 1-1 前言 1 1-2 高分子發光二極體之簡介 2 1-2-1 高分子發光二極體之工作原理 2 1-2-2 元件結構 4 1-3 電子注入層簡介 6 1-3-1 電子注入材料發展與作用機制 6 1-3-2 溴化四辛基銨電子注入層 10 1-4 溴化四烷基銨之分子堆積與運動 11 1-5 研究動機 12 第二章 烷鏈長度對溴化四烷基銨鹽電子注入層之影響 19 2-1 前言 19 2-2 實驗 20 2-2-1 藥品 20 2-2-2 PLED元件組裝 21 2-2-3 元件之特性分析 23 2-2-4 X光繞射分析 23 2-3 結果與討論 24 2-4 總結 27 第三章 溶劑對溴化四辛基銨電子注入層之影響 35 3-1 前言 35 3-2 實驗 36 3-2-1 藥品 36 3-2-2 PLED元件組裝 36 3-2-3 元件之特性分析 37 3-2-4 X光繞射儀之分析 38 3-2-5 原子力顯微鏡之分析 38 3-3 結果與討論 38 3-4 總結 42 第四章 溫度對溴化四辛基銨電子注入層之影響 48 4-1 前言 48 4-2 實驗 49 4-2-1 藥品 49 4-2-2 PLED元件組裝 49 4-2-3 元件之特性分析 51 4-2-4 X光繞射儀之分析 51 4-2-5 原子力顯微鏡之分析 51 4-3 結果與討論 52 4-4 總結 56 第五章 結論與建議 63 5-1 結論 63 5-2 未來工作建議 64 參考文獻 65 自述 68

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