本篇論文針對在不同的成長溫度下，以InGaAs/GaAs量子井（quantum well）做變溫（10～300K）的光激發螢光（photoluminescence）實驗。從所得到的數據，我們推論當量子井成長溫度較低時，其界面會產生較多的缺陷，並以實驗所得的熱活化能值加以證明。在100～200K之間， “量子井寬度”這個因素對於四個樣品的躍遷能量隨溫度的變化率其影響並不明顯。此外，我們使用k．p理論計算樣品中InGaAs量子井之寬度，得出當量子井成長溫度較低時，其InGaAs量子井之寬度會比預定要成長的寬度還厚。最後，我們利用InGaAs量子井躍遷能量和溫度之間的關係，得到Varshni常數-α、β，及Einstein溫度-θ值。

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