本論文旨在利用二極體連接的下閘極結構氧化銦鎵鋅(IGZO)薄膜電晶體(Thin film transistors, TFTs)，稱為場效應二極體(field-effect diodes, FEDs)，應用於紫外光檢測器(ultraviolet photodetectors, UV-PDs)。將TFT之閘極與汲極或源極短路連接，可實現與傳統二極體相似的正向或反向整流的電流-電壓(I-V)特性，並分別稱為F-FED和B-FED。相較於傳統TFT UV-PDs需於光檢測時使用兩個偏壓(汲極偏壓(V_DD)以及閘極偏壓(設置於起始電壓(V_on)))，FED UV-PDs僅需單一電源(無V_on)即可進行UV光檢測。為進一步增強FED UV-PDs的光電特性，本研究採用於背通道表面沉積一p型氧化鎳(NiO)覆蓋層(capping layer, CL)，透過NiO (p)/IGZO (n)所形成之pn異質接面(heterojunction, HJ)以增強通道層之全空乏(fully depletion, FD)程度，進一步抑制暗電流(I_dark)。除系統性探討通道厚度與IGZO FEDs的工作條件於提升UV光感測性能與改善穩定性之影響外，另亦藉由一考慮閘極漏電電流(I_G)的簡單數學模型，以模擬本研究所提出之F-和B-FED的I-V特性。此外，為更進一步釐清NiO CL於UV-PDs光響應特性提升之貢獻，本研究亦使用白金(Pt)製作蕭基(Schottky)型CL之TFT 與FED進行光電特性比較。
於實驗中，所有元件皆使用等效氧化層厚度(equivalent oxide thickness, EOT)為10 nm之Hf0.82Si0.18O閘極介電層。FED和TFT (W/L=200 μm/20 μm)依有無CL結構分為四種組態，並採用射頻（RF）濺鍍製備IGZO通道層和NiO CL以及使用電子束蒸鍍製備Pt CL。本研究係使用波長為275–400 nm與功率為1.25 mW/cm^2之UV光照射進行元件之光響應行為分析。透過光響應度(R_ph)、光靈敏度(S_ph)、檢測率(D^*)與外部量子效率(η_ext)等參數，探討IGZO通道層和NiO CL結構參數與UV光響應特性之折衷關係，製備最適化之FED UV-PDs元件結構。值得注意的是，於動態光響應行為上，發生易因IGZO通道層中之氧空缺所造成的持續光電導(persistent photoconductivity, PPC)效應。本研究係採用一正值之閘極脈衝使元件導通，透過外部電路將殘餘之光生載子清除，從而充分消除PPC現象。
本論文研究內容主要分為「IGZO FED操作原理及TFT與FED元件光電特性分析」、「CL結構於IGZO FED UV-PDs之光電特性優化」與「NiO CL IGZO FED UV-PDs之可靠度分析」三大部分，茲依序分述如下：
第一部分於「IGZO FED操作原理及IGZO TFT與FED UV-PDs光電特性分析」之研究，旨在以傳統金氧半場效電晶體(Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET)電流方程式為基礎，分析FED操作原理及建立其I-V特性模式，並佐以實驗結果驗證。結果顯示，本研究所建立之FED I-V特性模式與實驗結果具有良好的一致性。以F-FED為例，其操作條件由閘極(汲極於閘極連接)偏壓(V_G)以及臨界電壓(V_th)共同決定，而FED的I_dark與其操作條件密切相關。F-FED於足夠大且為負值之V_G(例如本研究所使用之-1.5 V)的情況下，當V_th>0時，FED操作於次臨界區，具有一低的關閉電流(I_off)，其值由I_G或次臨界電流(I_(D(sub)))決定。當V_th<0時，FED操作於飽和區，此時將造成相當大的I_off。為使I_off盡可能降低以最小化I_dark，適當的結構設計以最適化V_th尤其重要。於實驗上係分別以氧化矽鉿(Hf0.82Si0.18O)及IGZO作為介電層與通道層，並以鈦(Ti)作為閘極電極金屬，製備具25 (Type A)、30 (Type B)與35 (Type C) nm三種通道厚度(T_ch)之TFTs與FEDs進行光電特性分析。採用較薄通道(25 nm)可以獲得全空乏狀態，雖可使TFT與FED具有較低的關閉電流(I_off)，然亦將減少光生載子的生成空間，不利光電流之提升；使用較厚的通道(35 nm)雖可有效地提升元件導通與光響應特性，然亦導致臨界電壓(V_th)大幅左移，造成暗電流(I_dark)明顯上升，進而大幅降低UV-PDs的光靈敏度(S_ph)與檢測率(D*)。
第二部分於「CL結構於IGZO FED UV-PDs之光電特性優化」之研究，旨在利用p型NiO材料於通道上方沉積區域性CL以形成一pn異質接面，此一異質接面於通道產生一額外的空乏區，可允許在相同的有效通道厚度下(即相同I_off與V_th)提升主動層厚度，提升通道導電率、降低串聯電阻與增加光照下產生光載子之實空間，此外並透過CL與通道形成的pn異質接面於照光下提供額外的光生載子並藉由空乏區電場驅至通道，進一步提升光響應特性。本研究採用長度為5、10與13 μm 以及厚度為20、40、60、80與100 nm之NiO CL，針對不同長度(L_CL)及厚度(T_CL)的CL結構所製備元件之光電特性進行討論。於電特性上，實驗結果顯示，以L_CL=10 μm 、T_CL=60 nm 並搭配30 nm IGZO通道厚度之條件所製備之元件(Type B-10-60)擁有最適化的電性，其導通電流(I_on)為1.19 ×10 ^-4 A 與整流比(rectification ratio, RR)為2.78 ×10^7 (@±4 V)。於光響應特性上，針對上述所製備之NiO CL IGZO FED以紫外光(光波長為275–400 nm以及功率為1.25 mW/cm2)照射下進行元件之光響應行為分析。實驗結果顯示，以L_CL=10 μm、T_CL=80 nm並搭配30 nm IGZO通道厚度之條件所製備之Type B-10-80 FED表現出最優異的光電特性，於275 nm之紫外光照射下，其光響應性(Photoresponsivity, R_ph)高達1376.50 A/W與檢測率(detectivity, D^*)高達1.25×10^16 Jones，其UV-A與可見光、UV-B與UV-A以及UV-C與UV-B之拒斥比(R_(UVA(365)/VIS(530))、R_(UVB(310)/UVA(365))與R_(UVC(275)/UVB(310)))分別為3.08×10^6、7.99與1.95。
第三部分於「NiO CL IGZO FED UV-PDs之可靠度分析」之研究，旨在藉由負偏壓應力(Negative bias stress, NBS)測試上述所製備之IGZO FEDs應用於UV-PDs之穩定度，此外，亦使用一週期性(T=10 s) UV光照射(λ=275 nm，功率為1.25 mW/cm^2)分析其動態光響應行為下之PPC效應。實驗結果顯示，相較於薄通道Type A TFT，厚通道Type C TFT的臨界電壓偏移量(∆V_th)與汲極電流偏移量(∆I_D)於1000 s的NBS測試後，分別降低約35％和61％，於FED中也可看到相同的現象。於光響應可靠度部分，與使用薄通道(Type A)的FED比較，Type B-10-80 FED的檢測率變化(∆D^*)減少約23%，而於Type A與Type B-10-80元件中，FED於NBS 1000 s後之∆D^*分別比對應的TFT低約27％和17％。FED較TFT具高可靠度之原因，主要係來自元件具正值的臨界電壓(V_th>0)與FED於光響應量測可操作於足夠大的負閘極偏壓，此情況下使I_dark為閘極漏電流(I_G)主導而非傳統TFT型光偵測器由次臨界電流主導。於動態光響應行為下，Type A與Type B-10-80 FED皆發生明顯的PPC現象，Type A與Type B-10-80之上升時間(τ_r)/下降時間(τ_f)分別為0.96 s/2.37 s與1.07 s/3.59 s，為增強動態光響應操作並消除PPC的現象，因此對元件施加一30 ms的汲極(閘極與汲極連接)脈衝(V_D=4 V)，充分消除PPC現象，Type B-10-80之下降時間(τ_f)降為1.34 s。
本論文成功以二極體連接的下閘極IGZO TFTs製備FED UV-PDs，並配合在通道上表面使用NiO CL，允許在不降低V_th的情況下增加通道厚度有效提升感測性能，Type B-10-80於275 nm之UV光照射下，展現出優異的光響應特性，其R_ph、η_ext、S_ph與D^*分別為1376.50 A/W、6216×102 %、9.10×107與1.25×1016 Jones。此外，藉由FED V_G=V_D之偏壓條件藉由以I_G主導的I_dark擁有較TFT者更高的感測穩定性。除製程簡易、成本低廉及可大面積製備等優點外，FED UV-PDs因可採用單一電源操作、不需傳統TFT UV-PDs偵測電路所涉V_G=V_on之設計、因I_dark可由I_G主導而具較高穩定性以及低功耗等優勢，預計於未來UV和非UV光檢測器之應用將極具潛力。

The roles of channel thickness and operation condition of the IGZO field effect diode (FED) in enhancing ultraviolet light sensing performance and reliability is investigated. With a patterned NiO capping layer (CL) to form a heterojunction on the channel surface, experimental results show that the proposed IGZO FED with a thick channel (30 nm) exhibits comparable superior photoresponsivity (R_ph) of 1376.50 A/W and detectivity (D^*) of 1.25×1016 Jones at 275 nm but a better stability in ∆D^* (about 16% reduction) after a negative gate bias stress at -4 V for 1000 s as compared with the one based on the corresponding IGZO TFT. Enhancement in R_ph and D^* by about 138% and 25%, respectively, and reduction in ∆D^* by about 23% are obtained as compared with the FED using thin channel (25 nm). The improved reliability is due to a large positive threshold voltage (V_th) and negative gate bias voltage which causes the drain current being governed by gate leakage current rather than by subthreshold current, as clarified by a theoretical modeling and the experimental I-V characteristics of FEDs, while high sensing performance is attributed to the benefits of the NiO CL allowing channel thickening to increase V_th and maximize photocurrent.

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