| 研究生: |
羅宗倫 Lo, Tzung-Lun |
|---|---|
| 論文名稱: |
氧化鋅/砷化鎵薄膜退火前後之奈米壓痕行為及微觀結構變化之研究 Nanoindentation Behaviour and Microstructure of ZnO/GaAs Thin Film with and without Annealing |
| 指導教授: |
李偉賢
Lee, Woei-Shyan |
| 學位類別: |
碩士 Master |
| 系所名稱: |
工學院 - 機械工程學系 Department of Mechanical Engineering |
| 論文出版年: | 2018 |
| 畢業學年度: | 106 |
| 語文別: | 中文 |
| 論文頁數: | 64 |
| 中文關鍵詞: | 氧化鋅 、砷化鎵 、退火 、奈米壓痕 、差排 |
| 外文關鍵詞: | Nanoindentation, GaAs, Microstructural evolution, Annealing, Thin films |
| 相關次數: | 點閱:102 下載:0 |
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本研究討論氧化鋅/砷化鎵薄膜系統奈米壓痕行為,以及退火前後機械性質、表面形貌和微觀結構之變化。本實驗利用共濺鍍機於砷化鎵基板上沈積100nm及200nm之氧化鋅薄膜,分別對薄膜厚度100nm試片進行70nm和150nm深度之試驗,以及薄膜厚度200nm試片進行70nm和250nm深度之試驗,以了解壓痕深度與膜厚之影響。此外也對另一組試片進行500℃持溫30分鐘之加熱,同樣進行上述之量測,以比較退火前後之差異。
實驗結果顯示,退火前之負載-深度曲線有pop-in之現象,經退火後硬度及楊氏模數皆下降,因此無因薄膜脫落基板而發生pop-in之現象。當壓痕深度皆為70nm時,膜厚較薄之試片因受基板影響較明顯而具有較大之硬度值。觀察試片表面形貌及剖面微觀結構可發現,壓痕深度越大表面之變形量與差排密度也越大,當壓痕深度皆為70nm時,膜厚較薄之試片因受基板影響較明顯而有較大之表面變形與差排密度。退火後表面變形與差排密度皆較小。
The mechanical properties of ZnO/GaAs thin films with and without annealing indented in room temperatures to different depth were measured by using a nanoindentation technique. The specimens were annealed at the temperature 500℃ for 30 minutes. The result show that without annealing the pop-in effect appeared at the load-depth curve as the specimen indented at room temperature, due to the delamination of the thin film from the substrate. After annealing, the load-depth curve become smooth and the hardness and Young’s modulus is found to decrease. Furthermore, dislocations were also found to decrease significantly. The changes in microstructure and mechanical properties caused by different variables such as annealing, indentation depth and thickness of the thin film were also discussed.
[1] A. G. Aberle, "Thin-film solar cells," Thin solid films, vol. 517, no. 17, pp. 4706-4710, 2009.
[2] J. G. Swadener, E. P. Georgea, and G. M. Pharra, "The correlation of the indentation size effect measured with indenters of various shapes," Journal of the Mechanics and Physics of Solids, vol. 50, pp. 681-694, 2002.
[3] G. M. Pharr, "Measurement of mechanical properties by ultra-low load indentation," Materials Science and Engineering, vol. A253, pp. 151-159, 1998.
[4] M. Sakai, N. Hakiri, and T. Miyajima, "Instrumented indentation microscope: A powerful tool for the mechanical characterization in microscales," Journal of materials research, vol. 21, no. 9, pp. 2298-2303, 2006.
[5] S. Rajagopalan and R. Vaidyanathan, "Nano-and microscale mechanical characterization using instrumented indentation," JOM, vol. 54, no. 9, pp. 45-48, 2002.
[6] T. P. Rao and M. Santhoshkumar, "Effect of thickness on structural, optical and electrical properties of nanostructured ZnO thin films by spray pyrolysis," Applied Surface Science, vol. 255, no. 8, pp. 4579-4584, 2009.
[7] J. Chang, H. Kuo, I. Leu, and M. Hon, "The effects of thickness and operation temperature on ZnO: Al thin film CO gas sensor," Sensors and actuators B: Chemical, vol. 84, no. 2-3, pp. 258-264, 2002.
[8] H. Kim et al., "Effect of film thickness on the properties of indium tin oxide thin films," Journal of Applied Physics, vol. 88, no. 10, pp. 6021-6025, 2000.
[9] C.-Y. Yen et al., "Influence of annealing temperature on the structural, optical and mechanical properties of ALD-derived ZnO thin films," Applied Surface Science, vol. 257, no. 17, pp. 7900-7905, 2011.
[10] O. Lupan et al., "Effects of annealing on properties of ZnO thin films prepared by electrochemical deposition in chloride medium," Applied Surface Science, vol. 256, no. 6, pp. 1895-1907, 2010.
[11] S.-K. Wang, T.-C. Lin, S.-R. Jian, J.-Y. Juang, J. S.-C. Jang, and J.-Y. Tseng, "Effects of post-annealing on the structural and nanomechanical properties of Ga-doped ZnO thin films deposited on glass substrate by rf-magnetron sputtering," Applied Surface Science, vol. 258, no. 3, pp. 1261-1266, 2011.
[12] N. Perkas, G. Amirian, O. Girshevitz, and A. Gedanken, "Hydrophobic coating of GaAs surfaces with nanostructured ZnO," Materials Letters, vol. 175, pp. 101-105, 2016.
[13] Y. Zhang, H.-L. Lu, Y. Geng, Q.-Q. Sun, S.-J. Ding, and D. W. Zhang, "Impact of rapid thermal annealing on structural and electrical properties of ZnO thin films grown atomic layer deposition on GaAs substrates," Vacuum, vol. 103, pp. 1-4, 2014.
[14] B. L and B. Roberto, "The scaling challenges of CMOS and the impact on high-density non-volatile memories," Microsystem Technologies, vol. 13, no. 2, pp. 133-138, 2006.
[15] R. Ludeke and G. Landgren, "Electronic properties and chemistry of Ti/GaAs and Pd/GaAs interfaces," Physical Review B, vol. 33, no. 8, pp. 5526-5535, 1986.
[16] S. Ashok and J. M. Borrego, "Electrical characteristics of GaAs MIS Schottky diodes," Solid-State Electronics, vol. 22, pp. 621-631, 1979.
[17] C. Anthony and C. Fischer, "Nanoindentation," 2nd ed. Springer, N. Y., 2004.
[18] S. Timoshenko and J. N. Goodier, "Theory of Elasticity," 2nd ed. McGraw-Hill, N. Y., 1951.
[19] G. M. Pharr, W. C. Oliver, and F. R. Brotzen, "On the generality of the relationship among contact stiffness, contact area, and elastic modulus during indentation," Journal of Materials Research, vol. 7 No.3, 1992.
[20] W. C. Oliver and G. M. Pharr, "An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments," Journal of Materials Research, vol. 7, no. 6, pp. 1564-1583, 1992.
[21] S. Hainsworth, H. Chandler, and T. Page, "Analysis of nanoindentation load-displacement loading curves," Journal of Materials Research, vol. 11, no. 8, pp. 1987-1995, 1996.
[22] M. Qasmi, P. Delobelle, F. Richard, and A. Bosseboeuf, "Effect of the residual stress on the determination through nanoindentation technique of the Young's modulus of W thin film deposit on SiO2/Si substrate," Surface and Coatings Technology, vol. 200, no. 14-15, pp. 4185-4194, 2006.
[23] I. Manika and J. Maniks, "Size effects in micro- and nanoscale indentation," Acta Materialia, vol. 54, no. 8, pp. 2049-2056, 2006.
[24] K.-D. Bouzakis, N. Michailidis, S. Hadjiyiannis, G. Skordaris, and G. Erkens, "The effect of specimen roughness and indenter tip geometry on the determination accuracy of thin hard coatings stress–strain laws by nanoindentation," Materials characterization, vol. 49, no. 2, pp. 149-156, 2002.
[25] M. Bobji and S. Biswas, "Deconvolution of hardness from data obtained from nanoindentation of rough surfaces," Journal of materials research, vol. 14, no. 6, pp. 2259-2268, 1999.
[26] A. Bolshakov and G. Pharr, "Influences of pileup on the measurement of mechanical properties by load and depth sensing indentation techniques," Journal of materials research, vol. 13, no. 4, pp. 1049-1058, 1998.
[27] K. MIYAKE, S. FUJISAWA, and A. KORENAGA, "The Effect of Pile-Up and Contact Area on Hardness Test by Nanoindentation," Japanese Journal of Applied Physics, vol. 43, no. 4602-4605, 2004.
[28] R. Saha and W. D. Nix, "Effects of the substrate on the determination of thin film mechanical properties by nanoindentation," Acta materialia, vol. 50, no. 1, pp. 23-38, 2002.
[29] D. Kramer, A. Volinsky, N. Moody, and W. Gerberich, "Substrate effects on indentation plastic zone development in thin soft films," Journal of Materials Research, vol. 16, no. 11, pp. 3150-3157, 2001.
[30] B. Bokhonov and M. Korchagin, "In situ investigation of stage of the formation of eutectic alloys in Si–Au," Journal of Alloys and Compounds, vol. 312, pp. 238-250, 2000.
[31] Y.-L. Chuang, "Effect of annealing temperature on nanoindented microstructure of CuSi thin films," 2009.
[32] X. Li and B. Bhushan, "A review of nanoindentation continuous stiffness measurement technique and its applications," Materials characterization, vol. 48, no. 1, pp. 11-36, 2002.
[33] K. Wasmer, R. Gassilloud, J. Michler, and C. Ballif, "Analysis of onset of dislocation nucleation during nanoindentation and nanoscratching of InP," Journal of Materials Research, vol. 27, no. 01, pp. 320-329, 2011.
[34] A. J. Haq, P. Munroe, M. Hoffman, P. Martin, and A. Bendavid, "Deformation behaviour of DLC coatings on (111) silicon substrates," Thin Solid Films, vol. 516, no. 2-4, pp. 267-271, 2007.
[35] K. Durst, B. Backes, and M. Göken, "Indentation size effect in metallic materials: Correcting for the size of the plastic zone," Scripta Materialia, vol. 52, no. 11, pp. 1093-1097, 2005.
[36] T.-H. Fang, W.-J. Chang, and C.-M. Lin, "Nanoindentation characterization of ZnO thin films," Materials Science and Engineering: A, vol. 452, pp. 715-720, 2007.
[37] T.-H. Fang, W.-J. Chang, and C.-M. Lin, "Nanoindentation and nanoscratch characteristics of Si and GaAs," Microelectronic engineering, vol. 77, no. 3-4, pp. 389-398, 2005.
[38] S. E. Grillo, M. Ducarroir, M. Nadal, E. Tourni , and J. P. Faurie, "Nanoindentation of Si, GaP, GaAs and ZnSe single crystals," Journal of Physics D Applied Physics, vol. 36, no. 1, pp. L5-L9, 2003.
[39] Y. Cao, S. Allameh, D. Nankivil, S. Sethiaraj, T. Otiti, and W. Soboyejo, "Nanoindentation measurements of the mechanical properties of polycrystalline Au and Ag thin films on silicon substrates: Effects of grain size and film thickness," Materials Science and Engineering: A, vol. 427, no. 1-2, pp. 232-240, 2006.
[40] R. Ahuja, L. Fast, O. Eriksson, J. Wills, and B. Johansson, "Elastic and high pressure properties of ZnO," Journal of applied physics, vol. 83, no. 12, pp. 8065-8067, 1998.
[41] P. Carcia, R. McLean, M. Reilly, and G. Nunes Jr, "Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering," Applied Physics Letters, vol. 82, no. 7, pp. 1117-1119, 2003.
[42] S. Dhara and P. Giri, "ZnO nanowire heterostructures: intriguing photophysics and emerging applications," Rev. Nanosci. Nanotechnol, vol. 2, pp. 147-170, 2013.
[43] K. K. Bum, "Interfacial reactions in the Ti/GaAs system," Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 6, no. 3, p. 1473, 1988.
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