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研究生: 李協宇
Lee, Hsieh-Yu
論文名稱: 單次深層反應式離子蝕刻技術製造水下聲響感測元件之研究
Fabrication of the Underwater Acoustic Sensor by using one-step Deep Reactive-Ion Etching process
指導教授: 趙儒民
Chao, Ru-Min
學位類別: 碩士
Master
系所名稱: 工學院 - 系統及船舶機電工程學系
Department of Systems and Naval Mechatronic Engineering
論文出版年: 2006
畢業學年度: 94
語文別: 中文
論文頁數: 102
中文關鍵詞: 自然振頻背後蝕刻壓阻微機電製程技術水下聲響微感測器
外文關鍵詞: MEMS, Underwater acoustic sensor, Natural frequency, Piezo-resist, Back-side etching
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  • 本研究目的在於運用微機電製程技術製造應用於水下環境之水下聲響微感測器。感測器主要結構為配合微機電製程裡的面型加工技術所製作出的感測薄膜,並在薄膜的感測面鋪上適當的壓阻材料。其運作原理為利用結構本身具有自然振頻之特性,在接受與結構自然振頻接近的特定頻率聲波時,感測器輸出訊號會產生較高的訊雜比,藉此接收聲波所傳遞之訊號內容。

    在製程規劃上共有兩種製程,一種是以SOI晶片為基底的製程,一種則是以六吋單晶矽晶片為基底的製程。其差別在於使薄膜懸浮的方式,SOI晶片製程是以浸泡氫氟酸蝕刻犧牲層使薄膜懸浮,六吋單晶矽製程則是採用背後蝕刻使薄膜懸浮。SOI晶片製程由於浸泡氫氟酸時發生電化學反應使壓阻遭受破壞,而單晶矽晶片製程則透過背後蝕刻深度精準的控制,蝕刻出適當厚度之感測薄膜,成功完成感測器的製程。完成後進行感測器封裝,製作出適合水下環境使用之感測器,最後並經由各式聲學實驗設備探討聲響感測器之特性以作為感測器應用之參考。在空氣與水中的測試,感測器成功量測聲波訊號,其訊號與越接近感測器共振頻率頻響反應越佳之趨勢相符,並量測出感測器薄膜之自然振頻。

    This study reports a novel design of a MEMS type underwater acoustic sensor using 6”single-crystalline silicon wafer. At resonant frequent of the membrane structure , a high signal-to-noise ratio is expected by chemical vapor deposition thin layers of silicon nitride and poly-silicon , the sensing membrane and piezo-resistive material are patterned and etched using lithography and dry etching process, respectively. After the gold wire is patterned, the entire back side of the sensing membrane is etched in order to create the cavity by back-side etching. The waterproof of the hydrophone is completed by deposition a thin layer of Parylene polymer material. We have proven that the controlled etching process can create the sensing membrane without difficulties and have successfully made the acoustic sensor.

    During sensor testing done in air and water, we can receive the frequency of acoustic
    accurately. As the frequency of acoustic wave approaches the natural frequency of the sensor, the better frequency response of the sensor is obtained.

    摘要.....................................................I Abstract................................................II 誌謝...................................................III 目錄....................................................IV 圖目錄................................................VIII 表目錄.................................................XIV 第一章 緒論.............................................1 1.1研究動機............................................1 1.2文獻回顧............................................2 1.3研究方法............................................3 第二章 感測器基本原理...................................5 2.1薄膜結構的振動......................................6 2.2壓阻效應............................................7 2.3惠斯敦電橋電路.....................................10 第三章 感測器的設計.....................................13 3.1 材料的選用........................................14 3.1.1 晶圓材料.....................................14 3.1.2 氮化矽.......................................15 3.1.3 多晶矽.......................................16 3.1.4 金屬.........................................17 3.1.5 Parylene.....................................17 3.2壓阻外型的設計.....................................20 3.3薄膜結構外型的設計.................................22 3.4線路佈局...........................................24 3.5光罩之設計.........................................24 第四章 感測器製程......................................27 4.1 製程介紹..........................................28 4.1.1 清潔.........................................28 4.1.2 沉積.........................................29 4.1.3 離子佈植.....................................31 4.1.4 微影.........................................32 4.1.5 蒸鍍金屬層...................................39 4.1.6 蝕刻.........................................40 4.2 製程流程..........................................47 4.2.1 以SOI wafer為基底之製程......................47 4.2.2 以一般wafer為基底之製程......................53 4.3製程問題討論與製程結果.............................59 4.3.1 顯影問題.....................................59 4.3.2 壓阻實際阻值.................................62 4.3.3 SOI wafer浸泡HF問題..........................63 4.3.4背後蝕刻......................................66 4.3.5感測器完成之實體圖片..........................75 第五章 感測器封裝與測試.................................76 5.1 感測器封裝與打線..................................76 5.2 微感測器共振頻率測試..............................78 5.3 實驗設備架構......................................81 5.3.1 空氣中實驗的架構................................82 5.3.2 水下環境的實驗架構..............................84 5.4 實驗原理與方法....................................86 5.5 實驗結果..........................................88 5.5.1 感測器空氣中測試結果.........................89 5.5.2 感測器水下測試結果...........................92 第六章 結論與未來展望...................................96 6.1 製程成果與經驗....................................96 6.2 實驗結果與經驗....................................97 6.3 未來展望和建議....................................99 參考文獻...............................................100 自述

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