本篇論文是利用光激發螢光光譜（Photoluminescence spectroscopy，PL）實驗技術，對InAs 量子點樣品進行變溫的光激發螢光光譜研究。螢光訊號隨著溫度的改變，其中包含能量位置、強度和半高寬的改變，我們則藉由這些改變來加以分析比較樣品的特性。

　　在低溫22K 時，得到樣品量子點的能量峰值為1260.3 meV 和半高寬54.3meV。

　　在變溫的實驗裡，利用了量子點的發光能量峰值和半高寬隨溫度的變化，瞭解量子點內的載子因為熱效應的影響，產生載子利用穿遂或經由WL 往體積大的量子點轉移變化的情形，使得發光波長隨溫度升高而有類似S 形的紅位移。

　　在半高寬隨溫度呈現近似V 字形的變化曲線裡，知道載子因為熱效應而有往大體積的量子點裡移動的傾向，讓半高寬會逐漸變小，但又因為聲子－電子散射效應，或缺陷、雜質的影響，使得變小的半高寬在高溫時又慢慢變大。

　　活化能指的是量子點束縛載子的位能障礙大小，利用量子點的發光峰值和GaAs 能隙的差，得到理論上的活化能，與利用發光積分強度和溫度倒數的關係，使用公式求出的活化能，互相比較之下知道逃脫的載子並非越過GaAs 的能障進入GaAs 層裡，而是有可能在InAs/GaAs介面上有些缺陷，讓載子越過這能障進入缺陷產生非輻射的再合，降低了發光積分強度。

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