本論文一共分為五個章節，第一章節介紹新穎的非揮發記憶體的種類及研究動機;第二章節中將對電阻式記憶體做一個簡單的介紹，包含了元件結構、元件應用、開關特性行為以及導電機制，第三章節採用了氧化鋅薄膜來製作電阻式記憶體，並且利用紫外線臭氧清洗處理藉以改善其特性，第四章節藉由雞蛋白作為絕緣層材料，並且混入氧化鋅奈米粒子藉此提升元件特性，最後章節為結論與未來採用可撓性基板製作的可行性。
在實驗的第一部分以氧化鋅薄膜製作電阻式記憶體，其擁有雙極性的開關特性，在經過紫外線處理過後，元件的開關電流比提升至500倍，切換次數可達200次，並且其高及低阻態亦即資料維持時間可以分別達到104秒。而探討其導電機制發現在設置(Set)與重置(Reset)過程主要受到歐姆與蕭特基激發的導電機制所影響
實驗的第二部分運用加水稀釋的雞蛋白溶液製作電阻式隨機存取記憶體，並且發現其擁有單極性的電阻開關特性，並發現嵌入氧化鋅-奈米粒子可提升雞蛋白的開關特性，經過改良後的元件，其開關電流比為100倍，並且一樣能維持200次的開關次數，且其高及低阻態可以分別維持103秒，而探討其導電機制我們發現在嵌入氧化鋅奈米粒子的元件中，其導電機制由空間電荷限制電流轉換至普爾－法蘭克的導電機制。
*作者 **指導教授

This thesis is divided into five chapters. In the first chapter, the motivation and introduction of the novel nonvolatile memory were described. The resistance random access memory device, including device structure, application, resistive switching behavior and conduction mechanisms were described in the second chapter. In the third chapter, the resistance memory device with ZnO thin film was manufactured with the UV-Ozone cleaner treatment, and the device characteristics was improved significantly. In the fourth chapter, we used chicken albumin/water mixture as insulator material to fabricate the resistive memory device, and found that with ZnO-nano particle (NP) embedded in the albumen film the device operation characteristics could be enhanced. And the final chapter is the conclusion and future work.
The ZnO thin film was used to fabricate resistive memory device in first part, the device demonstrated bipolar switching characteristic. The on-off current ratio could be increased and improved to be 500 times by introducing additional UV-Ozone treatment, and the switching cycle can be up to 500 times, the retention time is about 104 seconds in both high resistance state (HRS) and low resistance state (LRS). According to the experiment result the conduction mechanism could be ascribed to the Ohmic and Schottky emission conduction mechanisms at set and reset processes, respectively.
The chicken albumin was mixed with water and used as the insulator material to fabricate the resistive memory in second part, and the device demonstrated the unipolar switching characteristics. The operation characteristics of chicken albumin resistive memory were improved by embedding the ZnO-NP into the insulator layer, the on-off current ratio was increased to the 100 times, the switching cycle could be up to 200 times, and the retention time is about 103 seconds. The conduction mechanism of the albumen resistive memory with ZnO-NP switched from the space charge limited current (SCLC) to the Pool-Frenkel conduction mechanism according to the observed results.
* Author **Advisor

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