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研究生: 李宸葳
Lee, Chen-Wei
論文名稱: 研發與製作高能物理實驗用的矽探測器
The development and fabrication of silicon sensors for high energy physics experiments
指導教授: 楊毅
Yang, Yi
學位類別: 碩士
Master
系所名稱: 理學院 - 物理學系
Department of Physics
論文出版年: 2021
畢業學年度: 109
語文別: 英文
論文頁數: 71
中文關鍵詞: STAR,矽長條探測器半導體製程
外文關鍵詞: STAR, Silicon Strips Detector, Process Fabrication
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  • 矽探測器發展至今已經有20 年的歷史,主要用於探測軌跡辨識位置來回推粒子的動
    量大小以及行進方向,美國布魯克海文國家實驗室(Brookhaven National Laboratory)
    的相對論性重離子對撞(Relativistic Heavy Ion Collider) 中的STAR 更新了前進方向的
    矽探測器,探測器主要由單層雙金屬的矽長條的探測器組成,由AC 耦合作為讀出
    訊號。 在本篇論文中,我們根據FST 矽探測器所給出來的規格,自行設計以及製作,
    再經由電性上的量測找出最適合製作此探測器的製程參數。

    Silicon detectors have been used in high energy physics experiments for more than 20 years. The application of this type of detector technology is mainly for tracking, i.e. to measure the momentum and directions of charged particles. A single-sided, double metal, and AC coupled readout silicon strip sensor has been developed for Forward Silicon Tracker (FST), the new forward detector in the STAR experiment. This thesis is to demonstrate the design, the process flows according to the FST silicon sensor specifications, as well as the tests for quality assurance by measuring the electrical signals.

    Abstract in Chinese . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i Abstract in English . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ii Acknowledgements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .iii Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iv List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . vii List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . viii 1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Fundamental theory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Semiconductor theory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.2 Electron-Hole pairs in Silicon . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.3 Doped semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.4 Resistivity for p-type and n-type silicon . . . . . . . . . . . . . . . . . . . . . 8 2.5 p-n junction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 2.5.1 Depletion region . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.6 The structure of silicon sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2.6.1 Sensor type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2.6.2 Silicon Detector Working Principle . . . . . . . . . . . . . . . . . . . . . . . 16 2.6.3 Different types of silicon sensor . . . . . . . . . . . . . . . . . . . . . . . . . 18 3 Sensor Design . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 3.1 Materials and Structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 3.1.1 Material . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 3.1.2 Structures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 3.2 Introduction of the instruments . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 3.2.1 Process (A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 3.2.2 Process (B) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 3.2.3 Process (C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 3.2.4 Important notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 3.3 Specifications for STAR Forward Silicon Tracker . . . . . . . . . . . . . . 34 3.4 Fabrication Processes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 3.5 Mask design . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 4 Sensor fabrication . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 4.1 The basic manufacture parameters . . . . . . . . . . . . . . . . . . . . . . . . . 41 4.2 Sample preparation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 4.3 Implantation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 4.4 Bias resistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 4.5 Metal pad . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 4.6 Passivation layer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 4.7 Summery . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 5 Measurements on sensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 5.1 Visual inspection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 5.2 The C-V and I-V test on full sensor . . . . . . . . . . . . . . . . . . . . . . . . . 57 5.3 The C-V and I-V test on individual strip . . . . . . . . . . . . . . . . . . . . . . 62 5.4 The measurement on polysilicon resistance . . . . . . . . . . . . . . . . . . 66 6 Conclusions and future works . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68 6.1 Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68 6.2 Process improvements and future works . . . . . . . . . . . . . . . . . . . . . 68 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70

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