本研究以兩步法成長鈣鈦礦薄膜，先由旋轉塗佈法成長氯化鉛(PbCl2)薄膜，再以化學氣相沉積法與MACl反應成鈣鈦礦薄膜。透過改變溫度退火氯化鉛薄膜並於不同反應溫度製備成鈣鈦礦薄膜，發現於高溫反應之薄膜品質較佳，但薄膜不夠緻密導致元件電信短路，且亮度過低無法偵測到完整的電致發光頻譜。因此調整製程方法，透過氧電漿於電洞傳輸層進行表面處理，藉此提升氯化鉛薄膜的緻密度，使其反應之鈣鈦礦薄膜更加緻密。在經處理後旋塗之氯化鉛薄膜明顯更加緻密，便以此於不同反應溫度製備鈣鈦礦薄膜，於高溫反應時可以製備出品質佳且緻密之薄膜，以此製備鈣鈦礦發光二極體。在改善薄膜表面形貌後，其元件之電信也由短路轉為二極體特性，且亮度明顯提升，成功製作出發光波段416nm的紫光鈣鈦礦發光二極體。

In this study, a two-step method was used to grow a perovskite film. First, a lead chloride (PbCl2) film was grown by a spin coating method, and then a chemical vapor deposition method was used to react with MACl to form a perovskite film(MAPbCl3). By changing the temperature to anneal the lead chloride film and prepare the perovskite film at different reaction temperatures, it is found that the quality of the film is better at high temperature, but the film is not dense enough, which leads to the short circuit of the device, and the brightness is too low to detect the complete electroluminescence spectrum. Therefore, the process method is adjusted to perform surface treatment on the hole transport layer through oxygen plasma, thereby increasing the density of the lead chloride film and making the reacted perovskite film more dense. After the treatment, the spin-coated lead chloride film is significantly denser, and the perovskite film can be prepared at different reaction temperatures. The high-quality and dense film can be prepared during the high-temperature reaction, so as to prepare the perovskite light-emitting diode. After improving the morphology of the film, the performance of the device also changed from a short circuit to a diode characteristic, and the brightness was significantly improved. A violet perovskite light-emitting diode with a luminescence band of 416 nm was successfully fabricated.

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