摘要
本實驗使用射頻濺鍍法在氬氣壓力(1.0×〖10〗^(-2) torr)環境下，重量百分比分別為1%、3%、6%、10%之二氧化矽與氧化鋅所混合粉末濺鍍至矽基板上成長氧化鋅薄膜，而後在空氣中將薄膜分別以不同退火溫度(600℃、700℃、800℃、900℃)進行退火處理。由FX之躍遷得知在700℃時能量最接近純氧化鋅，故700℃為空氣中最佳溫度退火條件。
將其樣品再透過不同退火時間處理，由退火溫度時間與PL光譜與SEM圖變化分析。可得知當二氧化矽含量微量時，會形成微量矽酸鋅幫助氧化鋅使晶界聚集，使表面平整且成長為較完整之晶格。當二氧化矽含量過高。會導致晶格內部出現過多矽酸鋅結構而造成氧化鋅晶格成長不易。

This study is to investigate the thin film,grown by Mixed SiO2 and ZnO powder radio-frequency sputtering technique. The samples were then annealed in air with various temperatures (from 600℃to 900℃) and various times (from 30 min to 75 min). Finally, the samples is investigated by low temperature photoluminescence spectra (PL) and field emission scanning electron microscope (SEM). We found the sample with 700℃ growth shows best quality. When a few SiO2 doped, the crystal lattice can improve. As increasing of SiO2 content, the willemite crystal made hard to get high guality ZnO thin film.

In this study, the ZnO thin films were grown on p-type B:Si(100) substrate by radio-frequency sputtering technique. The raw materials were mixtures of SiO2 and ZnO powders at weight ratios ranging from zero to 10%. The samples were then annealed in air with different temperatures (600 ~ 900oC) and/or time (30 ~ 75 minutes). From the variation of the photoluminescence (PL) free exciton peak position, the optimized annealing temperature, 700oC, could be concluded. The optimized annealing time is increased as the WR increased up to 6% due to the formation of Zn2SiO4. This result is in consistent with the measurement of scanning electron microscope.

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