據報導反置平面型FAPbI3具有比起MAPbI3更優異的光吸收達到870nm與優異的熱穩定性，但對於FAPbI3鈣鈦礦太陽能電池的文獻相對稀少。而在本論文主要分為兩個部分，元件結構為: ITO/PEDOT:PSS/FAPbI3/PCBM/BCP/Ag，第一部份為藉由溶液加工法改變鈣鈦礦薄膜樣貌，形成透亮薄膜與晶域明顯且結構完整進而達到高穩定與再現性高的基礎元件，第二部分為引入溶劑退火過程，藉由溶劑的蒸氣進入鈣鈦礦薄膜並且促進結晶區域的增長，以得到更好的結晶相，使得晶格成長進而提高電流密度JSC與填充因子FF。實驗中有兩種溶劑退火的方式都可得到良好的結晶相且高電流密度最高可達到JSC=22.5mA/cm2。雖在填充因子並不與文獻中一樣有大幅改善，但在溶劑退火中發現此p-i-n結構具有薄膜型態最適化的情形，基礎元件與溶劑退火的元件隨著靜置時間在VOC、JSC、FF都會有所改變而提升PCE的情況，此一情況還需進行下一步深入研究去探討。
關鍵字: 鈣鈦礦、FAPbI3、溶液加工法、溶劑退火

The HC(NH2)2PbI3 (FAPbI3) has been demonstrated not only to possess a band gap of 1.43 eV and its corresponding absorption edge reaches 870 nm, which is superior to MAPbI3 to serve as a light harvester, but also have a thermal stability. The cell structure considered is ITO/PEDOT:PSS/FAPbI3 /PCBM/BCP/Ag. There are two parts in this study, first, to improve the film structure and then obtain a mirro-like、clear crystal domain surface、high stability and reappearance by solvent engineering. Second is lead into solvent annealing process, solvent vapor is expected to penetrate into the perovskite film and promote growth of crystalline domains. By solvent annealing process, the size of the grains becomes much greater, so expected to enhance the current density and fill factor. Solvent annealing can lead a high crystallization and current density, the best of which could reach JSC=22.5mA/cm2. We find the p-i-n structure constantly changing to a suitable stage by setting. After storage for days, the cell exhibited a better VOC、JSC、FF. This phenomenon has not been described in detail. We are currently performing further investigation to identify the phenomenon behind the enhancement.

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