籠目(Kagome) 晶格材料因同時具備拓樸狄拉克錐(Dirac cones) 與平帶(flat bands) 之電子結構特徵，其幾何阻挫與磁性的強烈耦合已成為近期凝聚態物理領域的重要研究課題。本研究旨在生長具備籠目晶格結構的ScFe6Sn6 高品質單晶，並透過一系列低溫物理量測，探討其電性傳輸性質與各向異性行為。
本研究採用助熔劑法(flux method) 成功生長出ScFe6Sn6 單晶，並利用X 光繞射(XRD)、能量色散X 射線光譜(EDS)、超導量子干涉磁量儀(SQUID) 及物理性質量測系統(PPMS) 分析晶體特性。經由單晶X 光繞射(SCXRD) 確認，該樣品之空間群為P6/mmm，且在Sc 晶位上存在約4 % 的空缺缺陷。
在磁性表現上，ScFe6Sn6 展現出非常規的反鐵磁行為，並於低溫區間伴隨微弱的鐵磁現象。在電傳輸與熱電性質方面，綜合磁化率、電阻率、霍爾效應(Hall effect)、塞貝克效應(Seebeck effect)、熱容及熱導率等量測結果，證實了該系統處於多能帶框架(multi-band framework) 之中。磁阻數據暗示了樣品中存在磁性自旋擾動以及線性不飽和磁阻效應。
透過霍爾效應和熱電傳輸量測，我們嘗試釐清了ScFe6Sn6 的各向異性載子動力學：沿𝑐 軸方向的傳輸主要由𝑝 型電洞主導；而在𝑎𝑏 面內，high effective mass的𝑝 型電洞主導了高溫區的載子傳輸，而high mobility的𝑛 型電子則主導了低溫區的傳輸表現。

Kagome lattice materials have emerged as a prominent subject in condensed matter physics owing to their unique electronic structures, which host topological Dirac cones and flat bands, and facilitate a strong interplay between geometric frustration and magnetism. In this work, single crystals of the kagome compound ScFe6Sn6 were synthesized via flux method. Physical properties and microscopic transport mechanisms were systematically investigated. Structural characterization utilizing x-ray diffraction (XRD) and energy-dispersive x-ray spectroscopy (EDS) confirms that the compound crystallizes in the P6/mmm space group, with single-crystal XRD (SCXRD) refinement revealing approximately 4 % Sc-site vacancies.
Through low-temperature measurements—including magnetic susceptibility, electrical resistivity, the Hall and Seebeck effects, heat capacity, and thermal conductivity—the anisotropic transport behavior of ScFe6Sn6 was elucidated within a multiband framework. Magnetic measurements reveal unconventional antiferromagnetic behavior accompanied by a weak ferromagnetic component at low temperatures. Electrical transport and magnetoresistance data indicate the multiband nature of the system, suggesting the presence of magnetic spin fluctuations and linear magnetoresistance phenomenon. Furthermore, thermoelectric transport measurements elucidate the band topology: out-of-plane (𝑐-axis) transport is predominantly governed by 𝑝-type hole carriers, whereas in-plane (𝑎𝑏-plane) transport exhibits a distinct temperature-induced crossover. Specifically, high effective mass 𝑝-type holes, which may originating from the flat bands, dominate at high temperatures region, while high mobility 𝑛-type electrons decide the low-temperature transport behavior.

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